IC manufacturers Microchip

IC manufacturers (103)

Microchip LAN7800 | Demoboard RD016

Gigabit Ethernet Front End

Overview

TopologyLAN / POE
IC revisiona

Description

The electronics board has two interfaces, one USB C (USB 3.1) and one Gigabit RJ45/Ethernet interface. The GB-EthernetUSB adapter was developed on the basis of the EVBLAN7800LC Evaluation Board from Microchip. The circuit is built on a 4-layer PCB and in the present design is supplied with voltage via the USB interface. The first part of this Application Note presents the technical basics necessary for understanding the reference design. The second part details the 1 GB Ethernet interface up to the physical layer (PHY in the OSI model). EMC aspects are dealt with in detail in Application Note ANP116.

Features

  • Single Chip SuperSpeed(SS) USB 3.1 Gen 1 to 10/100/1000 Ethernet Controller
  • Integrated Gigabit PHY WITH HP Auto-MDIX
  • Integrated 10/100/1000 Ethernet MAC(Full-Duplex Support)
  • Integrated USB 3.1 Gen 1 SS Device Controller and PHY
  • Low Power Consumption
  • Compliant with Energy Efficient Ethernet IEEE 802.3az
  • Wake on LAN support(WOL)
  • Configuration via One Time Programmable(OTP) Memory
  • Net Detach provides automatic USB attach/detach when Ethernet cable is connected/removed

Typical applications

  • Gigabit Ethernet Front End

Products

Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
λDom typ.(nm)
Emitting Color
λPeak typ.(nm)
λPeak G typ.(nm)
λPeak Y typ.(nm)
IV typ.(mcd)
IV G typ.(mcd)
IV Y typ.(mcd)
VF typ.(V)
VF G typ.(V)
VF Y typ.(V)
Chip Technology
50% typ.(°)
C
Tol. C
Size
Qmin.
DF(%)
RISO
Ceramic Type
L(mm)
W(mm)
Fl(mm)
Packaging
Q(%)
ISAT(A)
RDC(mΩ)
fres(MHz)
IRP,40K(A)
ISAT,30%(A)
RDC typ.(mΩ)
VOP(V)
xPxC
Shielding
EMI
Application System
Working Voltage(V (DC))
Interface Type
Gender
Pins
PCB Thickness(mm)
Z @ 100 MHz(Ω)
Zmax(Ω)
Test Condition Zmax
IR 2(mA)
RDC max.(Ω)
Type
IR(mA)
Z @ 1 GHz(Ω)
H(mm)
Winding Style
L(µH)
fc(GHz)
VR(V)
VT(V (DC))
Channels
Polarity
VCh max.(V)
ICh Leak max.(µA)
VBR min.(V)
CCh typ.(pF)
IPeak(A)
VCh Clamp ESD typ.(V)
VESD Contact(kV)
Data rate
Ports
PoE
Improved CMRR
Operating Temperature
USB
Mount
Tab
LED
PHY Chip Mode
Shield Tabs
Samples
WL-SMCW SMT Mono-color Chip LED Waterclear, 570 nm, Bright Green
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Dominant Wavelength [typ.]570 nm
Emitting ColorBright Green 
Peak Wavelength [typ.]572 nm
Luminous Intensity [typ.]50 mcd
Forward Voltage [typ.]2 V
Chip TechnologyAlInGaP 
Viewing Angle Phi 0° [typ.]140 °
Size0603 
Length1.6 mm
Width0.8 mm
Height0.25 mm
Operating Temperature -40 °C up to +85 °C
MountSMT 
WE-CBF SMT EMI Suppression Ferrite Bead, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Size0603 
Length1.6 mm
Width0.8 mm
Pad Dimension0.3 mm
Impedance @ 100 MHz120 Ω
Maximum Impedance180 Ω
Maximum Impedance400 MHz 
Rated Current 22000 mA
DC Resistance0.05 Ω
TypeHigh Current 
Rated Current1500 mA
Impedance @ 1 GHz146 Ω
Height0.8 mm
Operating Temperature -55 °C up to +125 °C
MountSMT 
WE-MPSB EMI Multilayer Power Suppression Bead, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Size1206 
Length3.2 mm
Width1.6 mm
Pad Dimension0.5 mm
DC Resistance9.5 mΩ
Impedance @ 100 MHz110 Ω
Maximum Impedance118 Ω
Maximum Impedance150 MHz 
Rated Current 25400 mA
DC Resistance0.015 Ω
TypeHigh Current 
Rated Current5400 mA
Impedance @ 1 GHz44 Ω
Height1.1 mm
Operating Temperature -55 °C up to +125 °C
MountSMT 
WE-CNSW SMT Common Mode Line Filter, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Size1206 
Length3.2 mm
Width1.6 mm
Pins
Impedance @ 100 MHz90 Ω
DC Resistance0.3 Ω
Rated Current370 mA
Height1.8 mm
Winding Stylebifilar 
Inductance0.111 µH
Rated Voltage50 V
Insulation Test Voltage125 V (DC)
Operating Temperature -40 °C up to +125 °C
MountSMT 
WE-CNSW HF SMT Common Mode Line Filter, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Size0504 
Length1.2 mm
Width1 mm
Pins
Impedance @ 100 MHz60 Ω
DC Resistance0.22 Ω
Rated Current600 mA
Height0.9 mm
Winding Stylebifilar 
Inductance0.1 µH
Cut-Off Frequency10 GHz
Rated Voltage20 V
Insulation Test Voltage125 V (DC)
Operating Temperature -40 °C up to +105 °C
MountSMT 
WE-LQS SMT Power Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Size3015 
Length3 mm
Width3 mm
Saturation Current1.5 A
DC Resistance70 mΩ
Self Resonant Frequency72 MHz
Operating Voltage120 V
Rated Current1500 mA
Height1.5 mm
Inductance3.3 µH
Operating Temperature -40 °C up to +125 °C
MountSMT 
WE-MAPI SMT Power Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Size3020 
Length3 mm
Width3 mm
Saturation Current4.75 A
Self Resonant Frequency57 MHz
Performance Rated Current5.65 A
Saturation Current @ 30%6 A
DC Resistance30 mΩ
Operating Voltage80 V
ShieldingShielded 
Pins
DC Resistance0.036 Ω
Rated Current3900 mA
Height2 mm
Winding Stylebifilar 
Inductance1.2 µH
Operating Temperature -40 °C up to +125 °C
MountSMT 
WE-RJ45 LAN Transformer, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Length21.25 mm
Width16 mm
EMI FingersYes 
Height13.5 mm
Inductance350 µH
Insulation Test Voltage1500 V (DC)
Data rate1000BASE-T 
Ports1x1 
PoEnon-PoE 
Improved Common Mode RejectionNo 
Operating Temperature -40 °C up to +85 °C
USBNo 
MountTHT 
Tab PositionDown 
LED (Left-Right)yellow-green 
PHY Chip Modecurrent 
Shield TabsYes 
WCAP-CSGP MLCCs 50 V(DC), –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance15 pF
Capacitance±5% 
Size0402 
Insulation Resistance10 GΩ
Ceramic TypeNP0 Class I 
Length1 mm
Width0.5 mm
Pad Dimension0.25 mm
Packaging7" Tape & Reel 
Q-Factor700 %
Height0.5 mm
Rated Voltage50 V
Operating Temperature -55 °C up to +125 °C
WCAP-CSGP MLCCs 25 V(DC), –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance100 nF
Capacitance±20% 
Size0402 
Q-Factor [1]600 
Dissipation Factor10 %
Insulation Resistance5 GΩ
Ceramic TypeX5R Class II 
Length1 mm
Width0.5 mm
Pad Dimension0.25 mm
Packaging7" Tape & Reel 
Height0.5 mm
Rated Voltage25 V
Operating Temperature -55 °C up to +85 °C
WCAP-CSGP MLCCs 16 V(DC), –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance1 µF
Capacitance±10% 
Size0603 
Q-Factor [1]600 
Dissipation Factor10 %
Insulation Resistance0.1 GΩ
Ceramic TypeX7R Class II 
Length1.6 mm
Width0.8 mm
Pad Dimension0.4 mm
Packaging7" Tape & Reel 
Height0.8 mm
Rated Voltage16 V
Operating Temperature -55 °C up to +125 °C
WCAP-CSGP MLCCs 25 V(DC), –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance10 nF
Capacitance±10% 
Size0603 
Q-Factor [1]600 
Dissipation Factor3.5 %
Insulation Resistance10 GΩ
Ceramic TypeX7R Class II 
Length1.6 mm
Width0.8 mm
Pad Dimension0.4 mm
Packaging7" Tape & Reel 
Height0.8 mm
Rated Voltage25 V
Operating Temperature -55 °C up to +125 °C
WCAP-CSGP MLCCs 25 V(DC), –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance100 nF
Capacitance±10% 
Size0603 
Q-Factor [1]600 
Dissipation Factor3.5 %
Insulation Resistance5 GΩ
Ceramic TypeX7R Class II 
Length1.6 mm
Width0.8 mm
Pad Dimension0.4 mm
Packaging7" Tape & Reel 
Height0.8 mm
Rated Voltage25 V
Operating Temperature -55 °C up to +125 °C
WCAP-CSGP MLCCs 50 V(DC), –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance100 nF
Capacitance±10% 
Size0805 
Q-Factor [1]600 
Dissipation Factor2.5 %
Insulation Resistance5 GΩ
Ceramic TypeX7R Class II 
Length2 mm
Width1.25 mm
Pad Dimension0.5 mm
Packaging7" Tape & Reel 
Height0.8 mm
Rated Voltage50 V
Operating Temperature -55 °C up to +125 °C
WCAP-CSGP MLCCs 6.3 V(DC), –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance22 µF
Capacitance±20% 
Size0805 
Dissipation Factor15 %
Insulation Resistance0.005 GΩ
Ceramic TypeX5R Class II 
Length2 mm
Width1.25 mm
Pad Dimension0.5 mm
Packaging7" Tape & Reel 
Height1.25 mm
Rated Voltage6.3 V
Operating Temperature -55 °C up to +85 °C
WCAP-CSGP MLCCs 25 V(DC), –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance4.7 µF
Capacitance±20% 
Size0805 
Q-Factor [1]600 
Dissipation Factor10 %
Insulation Resistance0.02 GΩ
Ceramic TypeX5R Class II 
Length2 mm
Width1.25 mm
Pad Dimension0.5 mm
Packaging7" Tape & Reel 
Height1.25 mm
Rated Voltage25 V
Operating Temperature -55 °C up to +85 °C
WR-USB Type C Connectors, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Insulation Resistance1000 MΩ
PackagingTape and Reel 
Working Voltage48 V (DC)
Interface TypeType C 
GenderReceptacle 
Pins24 
PCB Thickness1.6 mm
TypeHorizontal 
Rated Current5000 mA
Polarity24 
Operating Temperature -40 °C up to +105 °C
MountTHR 
WCAP-CSGP MLCCs 100 V(DC), –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance10 nF
Capacitance±10% 
Size0805 
Q-Factor [1]600 
Dissipation Factor2.5 %
Insulation Resistance10 GΩ
Ceramic TypeX7R Class II 
Length2 mm
Width1.25 mm
Pad Dimension0.5 mm
Packaging7" Tape & Reel 
Height0.8 mm
Rated Voltage100 V
Operating Temperature -55 °C up to +125 °C
WCAP-CSMH Mid and High Voltage, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance100 pF
Capacitance±10% 
Size1206 
Dissipation Factor2.5 %
Insulation Resistance10 GΩ
Ceramic TypeX7R Class II 
Length3.2 mm
Width1.6 mm
Pad Dimension0.6 mm
Packaging7" Tape & Reel 
Q-Factor600 %
Height1.25 mm
Rated Voltage2000 V
Operating Temperature -55 °C up to +125 °C
WR-MJ Cat 3 Modular Jacks – THT, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Peak Wavelength (Green) [typ.]570 nm
Peak Wavelength (Yellow) [typ.]590 nm
Luminous Intensity (Green) [typ.]13 mcd
Luminous Intensity (Yellow) [typ.]8 mcd
Forward Voltage (Green) [typ.]2.3 V
Forward Voltage (Yellow) [typ.]2.3 V
Viewing Angle Phi 0° [typ.]140 °
Insulation Resistance1000 MΩ
PackagingTray 
Number of Pins (xPxC)8P8C 
ShieldingShielded 
EMI FingersYes 
Application SystemCAT 3 
Working Voltage125 V (DC)
TypeHorizontal 
Rated Current1500 mA
Ports1x1 
Operating Temperature -40 °C up to +85 °C
MountTHT 
Tab PositionDown 
LED (Left-Right)yellow-green 
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Product seriesWE-LAN AQ Transformer
Length17.53 mm
Width14.6 mm
Pad Dimension13.97 mm
DC Resistance1200 mΩ
Pins24 
Height4.5 mm
Inductance350 µH
Insulation Test Voltage1500 V (DC)
Data rate10/100/1000BASE-T 
Ports
PoEnon-PoE 
Improved Common Mode RejectionNo 
Operating Temperature -40 °C up to +105 °C
MountSMT 
WE-TVS TVS Diode – Super Speed Series, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Forward Voltage [typ.]0.9 V
SizeDFN3810-9L 
Length3.8 mm
Width1 mm
Height0.5 mm
Channels
PolarityUnidirectional 
Channel Operating Voltage [max.]5 V
(Reverse) Breakdown Voltage [min.]6 V
(Channel) Input Capacitance [typ.]0.5 pF
(Reverse) Peak Pulse Current5 A
Channel ESD Clamping Voltage [typ.]10.5 V
ESD Contact Discharge Capability15 kV
Operating Temperature -55 °C up to +85 °C
MountSMT 
WE-TVS TVS Diode – Super Speed Series, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Forward Voltage [typ.]0.9 V
SizeDFN1210-6L 
Length1.2 mm
Width1 mm
Height0.45 mm
Channels
PolarityUnidirectional 
Channel Operating Voltage [max.]3.3 V
Channel (Reverse) Leakage Current [max.]0.5 µA
(Reverse) Breakdown Voltage [min.]4.5 V
(Channel) Input Capacitance [typ.]0.18 pF
(Reverse) Peak Pulse Current3 A
Channel ESD Clamping Voltage [typ.]13 V
ESD Contact Discharge Capability8 kV
Operating Temperature -55 °C up to +85 °C
MountSMT 
WE-TVS TVS Diode – Standard Series, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Forward Voltage [typ.]0.8 V
SizeDFN1610-2L 
Length1.6 mm
Width1 mm
Height0.5 mm
Channels
PolarityUnidirectional 
Channel Operating Voltage [max.]20 V
(Reverse) Breakdown Voltage [min.]22.8 V
(Channel) Input Capacitance [typ.]240 pF
(Reverse) Peak Pulse Current24 A
Channel ESD Clamping Voltage [typ.]25.5 V
ESD Contact Discharge Capability30 kV
Operating Temperature -55 °C up to +85 °C
MountSMT