| 850 nm, 400 nm, 1100 nm | | | Status Activei| Production is active. Expected lifetime: >10 years. | Wavelength of Peak Sensitivity [typ.]850 nm | Range of Spectral Bandwidth [min.]400 nm | Range of Spectral Bandwidth [max.]1100 nm | Collector Current [min.]5 mA | Collector Current [typ.]15 mA | Collector-Emitter Dark Current [max.]300 nA | Chip TechnologySi | Viewing Angle Phi 0° [typ.]30 ° | | |
| 850 nm, 400 nm, 1100 nm | | | Status Activei| Production is active. Expected lifetime: >10 years. | Wavelength of Peak Sensitivity [typ.]850 nm | Range of Spectral Bandwidth [min.]400 nm | Range of Spectral Bandwidth [max.]1100 nm | Collector Current [min.]6 mA | Collector Current [typ.]15 mA | Collector-Emitter Dark Current [max.]300 nA | Chip TechnologySi | Viewing Angle Phi 0° [typ.]30 ° | | |
| 940 nm, 700 nm, 1100 nm | | | Status Activei| Production is active. Expected lifetime: >10 years. | Wavelength of Peak Sensitivity [typ.]940 nm | Range of Spectral Bandwidth [min.]700 nm | Range of Spectral Bandwidth [max.]1100 nm | Collector Current [min.]0.6 mA | Collector Current [typ.]2.8 mA | Collector-Emitter Dark Current [max.]100 nA | Chip TechnologySi | Viewing Angle Phi 0° [typ.]120 ° | | |
| 940 nm, 400 nm, 1100 nm | | | Status Activei| Production is active. Expected lifetime: >10 years. | Wavelength of Peak Sensitivity [typ.]940 nm | Range of Spectral Bandwidth [min.]400 nm | Range of Spectral Bandwidth [max.]1100 nm | Collector Current [min.]0.9 mA | Collector Current [typ.]1.6 mA | Collector-Emitter Dark Current [max.]100 nA | Chip TechnologySi | Viewing Angle Phi 0° [typ.]150 ° | | |
| 940 nm, 400 nm, 1100 nm | | | Status Activei| Production is active. Expected lifetime: >10 years. | Wavelength of Peak Sensitivity [typ.]940 nm | Range of Spectral Bandwidth [min.]400 nm | Range of Spectral Bandwidth [max.]1100 nm | Collector Current [min.]0.9 mA | Collector Current [typ.]2.5 mA | Collector-Emitter Dark Current [max.]100 nA | Chip TechnologySi | Viewing Angle Phi 0° [typ.]150 ° | | |
| 940 nm, 400 nm, 1100 nm | | | Status Activei| Production is active. Expected lifetime: >10 years. | Wavelength of Peak Sensitivity [typ.]940 nm | Range of Spectral Bandwidth [min.]400 nm | Range of Spectral Bandwidth [max.]1100 nm | Collector Current [min.]0.6 mA | Collector Current [typ.]3.1 mA | Collector-Emitter Dark Current [max.]100 nA | Chip TechnologySi | Viewing Angle Phi 0° [typ.]120 ° | | |
| 940 nm, 700 nm, 1100 nm | | | Status Activei| Production is active. Expected lifetime: >10 years. | Wavelength of Peak Sensitivity [typ.]940 nm | Range of Spectral Bandwidth [min.]700 nm | Range of Spectral Bandwidth [max.]1100 nm | Collector Current [min.]0.1 mA | Collector Current [typ.]1.2 mA | Collector-Emitter Dark Current [max.]100 nA | Chip TechnologySi | Viewing Angle Phi 0° [typ.]140 ° | | |
| 940 nm, 700 nm, 1100 nm | | | Status Activei| Production is active. Expected lifetime: >10 years. | Wavelength of Peak Sensitivity [typ.]940 nm | Range of Spectral Bandwidth [min.]700 nm | Range of Spectral Bandwidth [max.]1100 nm | Collector Current [min.]0.6 mA | Collector Current [typ.]4.4 mA | Collector-Emitter Dark Current [max.]100 nA | Chip TechnologySi | Viewing Angle Phi 0° [typ.]30 ° | | |
| 940 nm, 700 nm, 1100 nm | | | Status Activei| Production is active. Expected lifetime: >10 years. | Wavelength of Peak Sensitivity [typ.]940 nm | Range of Spectral Bandwidth [min.]700 nm | Range of Spectral Bandwidth [max.]1100 nm | Collector Current [min.]0.5 mA | Collector Current [typ.]1 mA | Collector-Emitter Dark Current [max.]30 nA | Chip TechnologySi | Viewing Angle Phi 0° [typ.]120 ° | | |
| 940 nm, 700 nm, 1100 nm | Simulation– | | Status Activei| Production is active. Expected lifetime: >10 years. | Wavelength of Peak Sensitivity [typ.]940 nm | Range of Spectral Bandwidth [min.]700 nm | Range of Spectral Bandwidth [max.]1100 nm | Collector Current [min.]0.5 mA | Collector Current [typ.]7 mA | Collector-Emitter Dark Current [max.]300 nA | Chip TechnologySi | Viewing Angle Phi 0° [typ.]60 ° | | |
| 940 nm, 700 nm, 1100 nm | Simulation– | | Status Activei| Production is active. Expected lifetime: >10 years. | Wavelength of Peak Sensitivity [typ.]940 nm | Range of Spectral Bandwidth [min.]700 nm | Range of Spectral Bandwidth [max.]1100 nm | Collector Current [min.]1.5 mA | Collector Current [typ.]10 mA | Collector-Emitter Dark Current [max.]100 nA | Chip TechnologySi | Viewing Angle Phi 0° [typ.]25 ° | | |
| 940 nm, 400 nm, 1100 nm | | | Status Activei| Production is active. Expected lifetime: >10 years. | Wavelength of Peak Sensitivity [typ.]940 nm | Range of Spectral Bandwidth [min.]400 nm | Range of Spectral Bandwidth [max.]1100 nm | Collector Current [min.]0.1 mA | Collector Current [typ.]1 mA | Collector-Emitter Dark Current [max.]100 nA | Chip TechnologySi | Viewing Angle Phi 0° [typ.]130 ° | | |
| 940 nm, 400 nm, 1100 nm | | | Status Activei| Production is active. Expected lifetime: >10 years. | Wavelength of Peak Sensitivity [typ.]940 nm | Range of Spectral Bandwidth [min.]400 nm | Range of Spectral Bandwidth [max.]1100 nm | Collector Current [min.]0.1 mA | Collector Current [typ.]1 mA | Collector-Emitter Dark Current [max.]100 nA | Chip TechnologySi | Viewing Angle Phi 0° [typ.]130 ° | | |
| 940 nm, 700 nm, 1100 nm | | | Status Activei| Production is active. Expected lifetime: >10 years. | Wavelength of Peak Sensitivity [typ.]940 nm | Range of Spectral Bandwidth [min.]700 nm | Range of Spectral Bandwidth [max.]1100 nm | Collector Current [min.]0.5 mA | Collector Current [typ.]1 mA | Collector-Emitter Dark Current [max.]100 nA | Chip TechnologySi | Viewing Angle Phi 0° [typ.]110 ° | | |
| 940 nm, 700 nm, 1100 nm | Simulation– | | Status Activei| Production is active. Expected lifetime: >10 years. | Wavelength of Peak Sensitivity [typ.]940 nm | Range of Spectral Bandwidth [min.]700 nm | Range of Spectral Bandwidth [max.]1100 nm | Collector Current [min.]0.6 mA | Collector Current [typ.]4.4 mA | Collector-Emitter Dark Current [max.]100 nA | Chip TechnologySi | Viewing Angle Phi 0° [typ.]30 ° | | |
