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Microchip MCP1632 | Demoboard dsPIC33C 4kW DC-DC Demonstration DS70005619A

dsPIC33C DSP digital signal microcontroller

Overview

TopologyFull-Bridge Converter symmetrical isolated
Input voltage400-900 V
Output 116 V / 100 A
Output 216 V / 200 A
IC revision1

Description

This document serves as a user guide for the new 4kW Phase-Shifted Full-Bridge (PSFB) with Current DoublerRectifier (CDR), DC-DC converter demonstrator application board utilizing the dsPIC33C DSP digital signalmicrocontroller. The PSFB-CDR board is a 800V to 12V DC-DC converter intended to support power conversionapplications from HV 800 VDC battery to 12 VDC Electric Vehicle bus. The DC-DC converter uses a highlyefficient and wide input voltage range, Phase-shifted-full-bridge topology which demonstrates partial to fullZVS (Zero Volts Switching) at the primary HV SiC full bridge. The option to add an external shim inductanceis available to tune peak efficiency operating point. The secondary side uses robust current doubler topologywhich reduces the current requirements for system magnetics. Smart reverse current detection is implementedin firmware to safely operate the current doubler stage and automatically enable synchronous rectification toincrease efficiency. In light load conditions, switching losses at primary side full bridge are quite significant;therefore, Burst mode is implemented to increase system efficiency.The user guide provides an in-depth review of the hardware, converter theory of operation and an overviewof the digital control implementation. Test results and measurements for this design are covered in thecorresponding operational manual document. The converter is designed as a dual-rail solution, offeringredundancy and maximizing light load efficiency. Each rail can transfer 1700W continuous and 2700W peakpower for short durations (> 10s with 20s breaks) outputting a total power of over 4000W to the 12 VDC bus

Typical applications

  • EV Chargers
  • 4kW DC-DC Converter

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λDom typ.(nm)
Emitting Color
λPeak typ.(nm)
IV typ.(mcd)
VF typ.(V)
Chip Technology
2θ50% typ.(°)
C
Tol. C
VR(V (DC))
Size
Operating Temperature
Q
DF(%)
RISO
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L(mm)
W(mm)
Fl(mm)
L(µH)
IRP,40K(A)
ISAT(A)
fres(MHz)
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ISAT,10%(A)
ISAT,30%(A)
Wire Type
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Ø ID(mm)
Ø f(mm)
Thread
Qty.
IRIPPLE(mA)
ILeak(µA)
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dV/dt(V/µs)
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fswitch(kHz)
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Emitting ColorGreen 
Peak Wavelength [typ.]515 nm
Luminous Intensity [typ.]430 mcd
Forward Voltage [typ.]3.2 V
Chip TechnologyInGaN 
Viewing Angle Phi 0° [typ.]140 °
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Dominant Wavelength [typ.]625 nm
Emitting ColorRed 
Peak Wavelength [typ.]630 nm
Luminous Intensity [typ.]250 mcd
Forward Voltage [typ.]2 V
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Viewing Angle Phi 0° [typ.]140 °
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Rated Current1000 mA
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Impedance @ 100 MHz600 Ω
Maximum Impedance800 Ω
Maximum Impedance200 MHz 
Rated Current 21000 mA
DC Resistance0.2 Ω
TypeHigh Current 
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Width12 mm
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Inductance68 µH
Performance Rated Current3.9 A
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Self Resonant Frequency5.5 MHz
VersionStandard 
Saturation Current @ 10%3.6 A
Saturation Current @ 30%4.4 A
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Capacitance47 pF
Capacitance±5% 
Rated Voltage50 V (DC)
Size0603 
Operating Temperature -55 °C up to +125 °C
Q-Factor1000 
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Insulation Resistance10 GΩ
Ceramic TypeNP0 Class I 
Length1.6 mm
Width0.8 mm
Pad Dimension0.4 mm
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Insulation Resistance100 MΩ
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Center pin Ø2 mm
Recommended Plug outer Ø5.5 mm
Rated Current5000 mA
Working Voltage30 V (DC)
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Rated Current5000 mA
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Size1365 
Operating Temperature -40 °C up to +125 °C
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Length13.65 mm
Width12.5 mm
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Inductance100 µH
Performance Rated Current3.2 A
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Self Resonant Frequency2.4 MHz
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Saturation Current @ 10%3.45 A
Saturation Current @ 30%6.8 A
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Length27 mm
Width28 mm
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Inductance4.7 µH
Performance Rated Current44 A
Saturation Current44 A
Self Resonant Frequency21.56 MHz
VersionSMT 
Saturation Current @ 10%44 A
Saturation Current @ 30%48 A
Wire TypeFlat 
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Rated Current44000 mA
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Height15.4 mm
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Rated Voltage16 V (DC)
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Insulation Resistance100 MΩ
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Rated Current50 mA
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Height2.5 mm
Operation Force260 g
Electrical Life50000 Cycles
Actuator ColorWhite 
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Rated Current50 mA
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Vaporphase processnot specified 
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Outer Diameter6 mm
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Capacitance470 µF
Capacitance±20% 
Rated Voltage25 V (DC)
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Operating Temperature -55 °C up to +125 °C
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Dissipation Factor14 %
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Length12.4 mm
Width10.3 mm
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Ripple Current2260 mA
Leakage Current117.5 µA
ESR16 mΩ
Diameter10 mm
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Product seriesWCAP-FTDB DC-Link
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Capacitance1 µF
Capacitance±5% 
Rated Voltage1200 V (DC)
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Operating Temperature -40 °C up to +105 °C
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Insulation Resistance10 GΩ
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Length32 mm
Width11 mm
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Hole Diameter1.1 mm
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Ripple Current3500 mA
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ESR39.5 mΩ
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Rate of Voltage Rise90 V/µs
Dissipation Factor0.07 %
Pins2 
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Height20 mm
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SPECWCAP-FTDB DC-Link, –, –
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Product seriesWCAP-FTDB DC-Link
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Capacitance5 µF
Capacitance±5% 
Rated Voltage1200 V (DC)
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Operating Temperature -40 °C up to +105 °C
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Insulation Resistance2 GΩ
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Length32 mm
Width22 mm
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Hole Diameter1.1 mm
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Ripple Current10400 mA
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ESR12.7 mΩ
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Rate of Voltage Rise90 V/µs
Dissipation Factor0.07 %
Pins2 
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Height37 mm
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Size1209 
Operating Temperature -40 °C up to +125 °C
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Length9.14 mm
Width12.7 mm
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Inductance340 µH
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VersionPush-Pull 
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MountSMT 
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Input Voltage 3.3 V (DC)
Output Voltage 15 V (DC)
Output Current 10.65 A
Type of InsulationReinforced 
Switching Frequency 250 - 550
Voltage-µSecond11 Vµs
Turns Ratio1:1.56 
Insulation Test Voltage5000 V (RMS)
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Height7.62 mm
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