IC manufacturers Infineon Technologies

IC manufacturers (103)

Infineon Technologies IMT65R010M2H | Demoboard REF_10KW_3LBUCK_SIC400

3-level flying capacitor buck with CoolSiC™ MOSFET 400 V G2

Overview

TopologyBuck Converter
Input voltage55-400 V
Switching frequency32.5 kHz
Output 1300 V / 34 A
Output 2300 V / 24 A
IC revisionV1.0

Description

The reference board REF_10KW_3LBUCK_SIC400 uses a 3-level-flying capacitor Buck DC/DC converter, which can also be reconfigured to be used as a 2-level Buck DC/DC converter. The primary goal of the platform is to enable evaluation of CoolSiC™ MOSFET 400 V and 650 V G2 in TOLL and D2PAK-7 packages. The reference design also aims to provide layout guidelines to optimize the commutation and gate loops and provide solutions for auxiliary supply for floating gate-drive, startup, pre-charging and voltage balancing of the flying capacitor in multi-level topologies. By enabling a fair benchmarking between 3-level (3L) and 2-level (2L) topologies, you can evaluate the following benefits of adopting a 3-level topology: • Lower voltage swing across the inductor (factor 0.5 x) combined with the benefits of “series interleaving”, where the inductor ripple frequency is double that of the MOSFET switching frequency, allows for a significant reduction (factor 0.25 x) in required inductance value. • For a given size, the inductor can be optimized to reduce conduction and core losses for higher efficiency. Alternatively, a smaller inductor can be used to increase power density. • Lower blocking voltage across the MOSFETs enable the use of lower-voltage rated switches with better switching Figures of Merit (FoM) – effectively lowering the switching losses significantly.

Features

Evaluate CoolSiC™ 400 V/650 V G2 MOSFETsCompare 3-level vs 2-level topologiesFlying capacitor balancing algorithmCompact planar transformer gate supplyTest bipolar vs unipolar gate driveAdjustable gate-drive voltageSupports Kelvin-/Power-Source gate driveLow inductance high-power designHeatsink-based cooling systemSupports Kelvin-/Power-Source gate drive

Typical applications

  • Motor control and drives
  • Energy Storage Systems and UPS
  • Class-D Audio
  • Server (AI) and telecom SMPS
  • Renewables
  • High voltage solid state power distribution

Products

Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
PCB/Cable/Panel
Modularity
Type
Wire Section
λDom typ.(nm)
Emitting Color
λPeak typ.(nm)
λPeak B typ.(nm)
λPeak G typ.(nm)
λPeak R typ.(nm)
λDom B typ.(nm)
λDom G typ.(nm)
λDom R typ.(nm)
IV typ.(mcd)
IV B typ.(mcd)
IV G typ.(mcd)
IV R typ.(mcd)
VF typ.(V)
VF B typ.(V)
VF G typ.(V)
VF R typ.(V)
Chip Technology
50% typ.(°)
L(µH)
IRP,40K(A)
ISAT,30%(A)
RDC typ.(mΩ)
fres(MHz)
VOP(V)
Mount
SW(mm)
L(mm)
Ø OD(mm)
To
IR(A)
ISAT(A)
RDC max.(mΩ)
R
Tol. R
PRated(mW)
TCR(ppm/ °C)
TCR(ppm/ °C)
VE(V)
Version
Operating Temperature
Stranded Wire Section (AWG)
Packaging
Working Voltage(V (AC))
W(mm)
H(mm)
IR(A)
Ti
Tl(mm)
Pins
Samples
SPEC
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
PCB/Cable/PanelPCB 
ModularityNo 
TypeHorizontal 
Wire Section 30 to 18 (AWG) 0.2 to 0.75 (mm²)
MountTHT 
Length5.48 mm
Rated Current6 A
Operating Temperature -40 °C up to +105 °C
Stranded Wire Section (AWG)30 to 18 (AWG) 
PackagingBox 
Working Voltage150 V (AC)
Pins
SPEC
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
PCB/Cable/PanelPCB 
ModularityNo 
TypeHorizontal 
Wire Section 30 to 18 (AWG) 0.2 to 0.75 (mm²)
MountTHT 
Length10.56 mm
Rated Current6 A
Operating Temperature -40 °C up to +105 °C
Stranded Wire Section (AWG)30 to 18 (AWG) 
PackagingBox 
Working Voltage150 V (AC)
Pins
SPEC
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
SW5.5 mm
Length60 mm
Outer ThreadM3 
Operating Temperature -55 °C up to +150 °C
PackagingCarton 
Inner ThreadM3 
SPEC
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Product seriesWR-BHD 2.54 mm Male
PCB/Cable/PanelPCB 
TypeStraight 
MountTHT 
Length17.82 mm
Rated Current3 A
VersionLow Profile 
Operating Temperature -40 °C up to +105 °C
PackagingTray 
Working Voltage250 V (AC)
Pins
SPEC
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
TypeStraight 
MountTHT 
Length5.08 mm
Rated Current3 A
Operating Temperature -40 °C up to +105 °C
PackagingBag 
Working Voltage250 V (AC)
Pins
SPEC
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
TypeStraight 
MountTHT 
Length7.62 mm
Rated Current3 A
Operating Temperature -40 °C up to +105 °C
PackagingBag 
Working Voltage250 V (AC)
Pins
SPEC

PCN pending

Due to a pending PCN, a modification of the component will be implemented soon. Please find the PCN below. If you have further questions please get in contact with our sales staff.

Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
TypeStraight 
MountTHT 
Length10.16 mm
Rated Current3 A
Operating Temperature -40 °C up to +105 °C
PackagingBag 
Working Voltage250 V (AC)
Rated Current3 A
Pins
SPEC
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
MountTHR 
Rated Current85 A
Operating Temperature -55 °C up to +150 °C
PackagingTape and Reel 
Width10 mm
Height4 mm
Inner ThreadM5 
Thread Length3.5 mm
Pins
SPEC
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance22 µH
Performance Rated Current1.85 A
Saturation Current @ 30%2.45 A
DC Resistance250 mΩ
Self Resonant Frequency11 MHz
Operating Voltage80 V
MountSMT 
Length4 mm
Rated Current1.7 A
Saturation Current1.85 A
DC Resistance280 mΩ
Operating Temperature -40 °C up to +125 °C
Width4 mm
Height2 mm
SPEC
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Dominant Wavelength [typ.]525 nm
Emitting ColorGreen 
Peak Wavelength [typ.]520 nm
Luminous Intensity [typ.]430 mcd
Forward Voltage [typ.]3.2 V
Chip TechnologyInGaN 
Viewing Angle Phi 0° [typ.]140 °
MountSMT 
Length1.6 mm
Operating Temperature -40 °C up to +85 °C
PackagingTape and Reel 
Width0.8 mm
Height0.4 mm
SPEC
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Emitting ColorRed & Green & Blue 
Peak Wavelength (Blue) [typ.]468 nm
Peak Wavelength (Green) [typ.]520 nm
Peak Wavelength (Red) [typ.]632 nm
Dominant Wavelength (Blue) [typ.]470 nm
Dominant Wavelength (Green) [typ.]525 nm
Dominant Wavelength (Red) [typ.]624 nm
Luminous Intensity (Blue) [typ.]350 mcd
Luminous Intensity (Green) [typ.]1000 mcd
Luminous Intensity (Red) [typ.]360 mcd
Forward Voltage (Blue) [typ.]3.3 V
Forward Voltage (Green) [typ.]3.3 V
Forward Voltage (Red) [typ.]2 V
Chip TechnologyAlInGaP + InGaN 
Viewing Angle Phi 0° [typ.]120 °
Length3.2 mm
Operating Temperature -40 °C up to +85 °C
Width1.6 mm
Height0.7 mm
SPEC
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Dominant Wavelength [typ.]630 nm
Emitting ColorSuper Red 
Peak Wavelength [typ.]645 nm
Luminous Intensity [typ.]80 mcd
Forward Voltage [typ.]2 V
Chip TechnologyAlInGaP 
Viewing Angle Phi 0° [typ.]140 °
MountSMT 
Length1.6 mm
Operating Temperature -40 °C up to +85 °C
Width0.98 mm
Height0.8 mm
SPEC
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance510 µH
DC Resistance44 mΩ
Operating Voltage1000 V
Outer Diameter60 mm
Rated Current9.8 A
Saturation Current24 A
DC Resistance55 mΩ
Operating Temperature -40 °C up to +155 °C
Height54.5 mm
SPEC
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
MountSMT 
Length1 mm
Rated Current1 A
Resistance0 Ω
Resistance+0.05Ω/-0Ω 
Rated Power62.5 mW
Operating Temperature -55 °C up to +155 °C
Width0.5 mm
Height0.35 mm
SPEC
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
MountSMT 
Length1 mm
Resistance120 Ω
Resistance±1% 
Rated Power100 mW
Temperature Coefficient of Resistance (min.)-100 ppm/ °C
Temperature Coefficient of Resistance (max.)100 ppm/ °C
Limiting Element Voltage50 V
Operating Temperature -55 °C up to +155 °C
Width0.5 mm
Height0.35 mm
SPEC
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
MountSMT 
Length1 mm
Resistance14 kΩ
Resistance±1% 
Rated Power100 mW
Temperature Coefficient of Resistance (min.)-100 ppm/ °C
Temperature Coefficient of Resistance (max.)100 ppm/ °C
Limiting Element Voltage50 V
Operating Temperature -55 °C up to +155 °C
Width0.5 mm
Height0.35 mm
SPEC
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
MountSMT 
Length1.6 mm
Resistance1 kΩ
Resistance±1% 
Rated Power100 mW
Temperature Coefficient of Resistance (min.)-100 ppm/ °C
Temperature Coefficient of Resistance (max.)100 ppm/ °C
Limiting Element Voltage75 V
Operating Temperature -55 °C up to +155 °C
Width0.8 mm
Height0.45 mm
SPEC
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
MountSMT 
Length1 mm
Resistance6.8 kΩ
Resistance±1% 
Rated Power100 mW
Temperature Coefficient of Resistance (min.)-100 ppm/ °C
Temperature Coefficient of Resistance (max.)100 ppm/ °C
Limiting Element Voltage50 V
Operating Temperature -55 °C up to +155 °C
Width0.5 mm
Height0.35 mm
SPEC
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
MountSMT 
Length1 mm
Resistance15.4 kΩ
Resistance±1% 
Rated Power100 mW
Temperature Coefficient of Resistance (min.)-100 ppm/ °C
Temperature Coefficient of Resistance (max.)100 ppm/ °C
Limiting Element Voltage50 V
Operating Temperature -55 °C up to +155 °C
Width0.5 mm
Height0.35 mm
SPEC
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
MountSMT 
Length1 mm
Resistance64.9 kΩ
Resistance±1% 
Rated Power100 mW
Temperature Coefficient of Resistance (min.)-100 ppm/ °C
Temperature Coefficient of Resistance (max.)100 ppm/ °C
Limiting Element Voltage50 V
Operating Temperature -55 °C up to +155 °C
Width0.5 mm
Height0.35 mm