IC manufacturers Valens Semiconductor

IC manufacturers (103)

Valens Semiconductor VS3000 | Demoboard VS3-EVK2-00-3000-MD

Valens Stello VS3000 Product Brief

Overview

TopologyHDBaseT
IC revisionA0

Description

The only solution for long-range distribution of uncompressed HDMI 2.0, with zero latency. The Valens Stello VS3000 chipset family includes highly integrated ICs for the convergence and extension of A/V signals over a single standard Category cable.The Stello chipsets enable the extension of uncompressed HDMI 2.0 (18Gbps – 4K@60 4:4:4), high fidelity audio, 1Gbps ethernet, USB2.0, controls, and power, over a CAT cable for up to 100 meters (328 feet), with zero latency. They implement the HDBaseT 3.0 spec and are backwards compatible with HDBaseT spec 2.0 and spec 1.0 products, providing interoperability with existing installations.

Features

  • Convergence of multiple native interfaces over a single Cat 6a cable (U/FTP), including:
  • Video: Uncompressed HDMI 2.0 4K@60Hz 4:4:4, 8-bit resolution
  • Audio: I2S-4 and S/PDIF
  • Ethernet: 1Gbps - USB: High speed USB 2.0
  • Controls: I2C, UART and CIR
  • Power: PoH (power over HDBaseT), based on IEEE 802.3a/bt
  • Highly integrated chipset
  • Concurrent ‘HDMI in’ and ‘HDMI out’ native ports
  • Audio Extract and Insert functionality on ‘HDMI in’, ‘HDMI out,’ and the HDBaseT port
  • HDCP2.3 repeater
  • Internal HDBaseT packet switching core
  • HDBaseT port duality, enabling a single hardware design to support both Tx and Rx
  • Backwards compatible with VS100 and Colligo VS2000 Valens product families

Typical applications

  • Transmission of medical AV data

Products

Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
Tab
LED
PHY Chip Mode
Shield Tabs
C
Tol. C
DF(%)
RISO
Ceramic Type
L(mm)
W(mm)
Fl(mm)
Packaging
ISAT(A)
RDC(mΩ)
fres(MHz)
IRP,40K(A)
ISAT,10%(A)
ISAT,30%(A)
LS(µH)
Interface Type
Variant
Gender
Pins
Working Voltage(V (AC))
H(mm)
Operation Force(g)
Electrical Life(Cycles)
Actuator Color
Washable
Vaporphase process
Z @ 100 MHz(Ω)
Zmax(Ω)
Test Condition Zmax
IR 2(mA)
RDC max.(Ω)
Type
IR(mA)
Z @ 1 GHz(Ω)
Winding Style
Number of windings
L1(µH)
Z(Ω)
IR(mA)
RDC max.(Ω)
VR(V)
Version
VIN
VOut1(V)
IOut1(A)
VOut2(V)
IOut2(A)
Vaux(V)
n
LSmin.(nH)
VT(V (DC))
Size
Data rate
Ports
PoE
Improved CMRR
Operating Temperature
USB
Mount
L(µH)
Samples
WE-RJ45 LAN Through Hole Reflow, Up, green/yellow - green/yellow
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Tab PositionUp 
LED (Left-Right)green/yellow - green/yellow 
PHY Chip Modecurrent & voltage 
Shield TabsNo 
Length22 mm
Width16 mm
Height14 mm
Turns Ratio1:1 
Insulation Test Voltage2250 V (DC)
Data rate100BASE-TX 
Ports
PoEnon-PoE 
Improved Common Mode RejectionNo 
Operating Temperature -40 °C up to +85 °C
USBNo 
MountTHR 
Inductance350 µH
WE-RJ45 LAN Through Hole Reflow, Up, green/yellow - green/yellow
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Tab PositionUp 
LED (Left-Right)green/yellow - green/yellow 
PHY Chip Modecurrent 
Shield TabsNo 
Length21.5 mm
Width16 mm
Height13.6 mm
Turns Ratio1:1 
Insulation Test Voltage2250 V (DC)
Data rate1000BASE-T 
Ports1x1 
PoEnon-PoE 
Improved Common Mode RejectionNo 
Operating Temperature -40 °C up to +85 °C
USBNo 
MountTHR 
Inductance350 µH
WE-CBF SMT EMI Suppression Ferrite Bead, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Length1.6 mm
Width0.8 mm
Pad Dimension0.3 mm
Height0.8 mm
Impedance @ 100 MHz1000 Ω
Maximum Impedance1050 Ω
Maximum Impedance120 MHz 
Rated Current 2830 mA
DC Resistance0.3 Ω
TypeWide Band 
Rated Current600 mA
Impedance @ 1 GHz186 Ω
Number of windings
Rated Current600 mA
DC Resistance [1]0.3 Ω
VersionSMT 
Size0603 
Operating Temperature -55 °C up to +125 °C
MountSMT 
WE-CBF SMT EMI Suppression Ferrite Bead, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Length1.6 mm
Width0.8 mm
Pad Dimension0.3 mm
Height0.8 mm
Impedance @ 100 MHz470 Ω
Maximum Impedance600 Ω
Maximum Impedance230 MHz 
Rated Current 21000 mA
DC Resistance0.2 Ω
TypeHigh Current 
Rated Current800 mA
Number of windings
Rated Current1000 mA
DC Resistance [1]0.2 Ω
VersionSMT 
Size0603 
Operating Temperature -55 °C up to +125 °C
MountSMT 
WE-MPSB EMI Multilayer Power Suppression Bead, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Length1.6 mm
Width0.8 mm
Pad Dimension0.3 mm
Height0.8 mm
Impedance @ 100 MHz60 Ω
Maximum Impedance99 Ω
Maximum Impedance458 MHz 
Rated Current 25100 mA
DC Resistance0.015 Ω
TypeHigh Current 
Rated Current5100 mA
Impedance @ 1 GHz74 Ω
Number of windings
VersionSMT 
Size0603 
Operating Temperature -55 °C up to +125 °C
MountSMT 
WE-SL5 HC SMT Common Mode Line Filter, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Length9.5 mm
Width8.3 mm
Pins
Height5 mm
DC Resistance0.03 Ω
Rated Current2500 mA
Winding Stylesectional 
Number of windings
Inductance [1]11 µH
Impedance1000 Ω
Rated Current2500 mA
DC Resistance [1]0.03 Ω
Rated Voltage80 V
VersionSMT 
Leakage Inductance [min.]1300 nH
Insulation Test Voltage500 V (DC)
Operating Temperature -40 °C up to +125 °C
MountSMT 
Inductance11 µH
WE-LQS SMT Power Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Length2.5 mm
Width2 mm
Saturation Current3.5 A
DC Resistance35 mΩ
Self Resonant Frequency176 MHz
Height1.2 mm
Rated Current2500 mA
Size2512 
Operating Temperature -40 °C up to +125 °C
MountSMT 
Inductance0.68 µH
WE-TPC SMT Tiny Power Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Length5.8 mm
Width5.8 mm
Saturation Current2.2 A
Self Resonant Frequency45 MHz
Pins
Height2.8 mm
DC Resistance0.035 Ω
Rated Current2500 mA
Number of windings8.5 
VersionSMT 
Size5828 
Operating Temperature -40 °C up to +125 °C
MountSMT 
Inductance4.2 µH
WE-LHMI SMT Power Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Length7.3 mm
Width6.6 mm
Self Resonant Frequency45 MHz
Performance Rated Current12.4 A
Saturation Current @ 10%12 A
Saturation Current @ 30%24 A
Height4.8 mm
DC Resistance0.0075 Ω
VersionSMT 
Size7050 
Operating Temperature -40 °C up to +125 °C
MountSMT 
Inductance1.2 µH
WE-PoEH Power over Ethernet High Power Transformer, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Length14 mm
Width17.65 mm
Saturation Current3.6 A
Leakage Inductance0.7 µH
Height14.5 mm
VersionFlyback 
Input Voltage 33 - 57 V (DC)
Output Voltage 15 V
Output Current 13 A
Output Voltage 25 V
Output Current 23 A
Auxiliary Voltage10 V
Turns Ratio5.33:1:1:2 
Insulation Test Voltage1500 V (DC)
SizeEPQ13 
Operating Temperature -40 °C up to +125 °C
MountSMT 
Inductance48 µH
WR-USB Mini/Micro Connectors, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Insulation Resistance1000 MΩ
PackagingTape and Reel 
Interface TypeType B 
Variantwith Pads & Pegs 
GenderReceptacle 
Pins
Working Voltage30 V (AC)
TypeHorizontal 
Rated Current1000 mA
Rated Current1000 mA
Operating Temperature -40 °C up to +105 °C
MountSMT 
WS-TASV J-Bend SMT Tact Switch 3.5x2.9 mm, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Insulation Resistance100 MΩ
PackagingTape and Reel 
Height1.7 mm
Operation Force350 g
Electrical Life200000 Cycles
Actuator ColorBlue 
WashableNo 
Vaporphase processnot specified 
Rated Current50 mA
Rated Voltage12 V
Operating Temperature -40 °C up to +85 °C
WE-FLYTI Flyback Transformers, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Length23.11 mm
Width29.65 mm
PackagingTape and Reel 
Saturation Current8.75 A
Leakage Inductance0.1 µH
Height11.43 mm
VersionFlyback 
Input Voltage 9 - 57 V (DC)
Output Voltage 156 V
Output Current 10.35 A
Auxiliary Voltage12 V
Turns Ratio1:5:1.13 
Insulation Test Voltage1500 V (DC)
SizeEFD20 
Operating Temperature -40 °C up to +125 °C
MountSMT 
Inductance10 µH
WCAP-CSMH Mid and High Voltage, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance10 nF
Capacitance±10% 
Dissipation Factor2.5 %
Insulation Resistance10 GΩ
Ceramic TypeX7R Class II 
Length1.6 mm
Width0.8 mm
Pad Dimension0.4 mm
Packaging7" Tape & Reel 
Height0.8 mm
Rated Voltage250 V
Size0603 
Operating Temperature -55 °C up to +125 °C
WE-LAN 10G Transformer 10Gbit Base-T, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Length18.5 mm
Width15.34 mm
Height10.02 mm
Turns Ratio1:1 
Insulation Test Voltage4000 V (DC)
Data rate10G Base-T 
Ports
PoEPoE (up to 350 mA) 
Improved Common Mode RejectionNo 
Operating Temperature -40 °C up to +85 °C
MountSMT 
Inductance120 µH