WE-LAN 10G Transformer 10Gbit Base-T

Characteristics

  • 10G Base-T
  • PoE(+) over 4 pairs up to 150 W
  • Compliant with IEEE standards: 802.3af, 802.3at, 802.3an and 802.3bt
  • Suitable for industrial temperatures: -40°C up to +105°C

Applications

  • Office and factory access points
  • Gateways
  • Servers
  • High-speed routers and switches
  • HDBaseT applications

Products

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Order Code
Data­sheet
Simu­lation
Downloads
Status
Data rate
Ports
PoE
Improved CMRR
Operating Temperature
VT(V (RMS))
Mount
L(µH)
Design Kit
Samples
749050010A
10G Base-T, 1, non-PoE
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Data rate10G Base-T 
Ports
PoEnon-PoE 
Improved Common Mode RejectionNo 
Operating Temperature 0 °C up to +70 °C
Insulation Test Voltage1500 V (RMS)
MountSMT 
Inductance200 µH
Design Kit
749050010U
10G Base-T, 1, non-PoE
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Data rate10G Base-T 
Ports
PoEnon-PoE 
Improved Common Mode RejectionNo 
Operating Temperature 0 °C up to +70 °C
Insulation Test Voltage1500 V (RMS)
MountSMT 
Inductance200 µH
Design Kit
749052011
10G Base-T, 1, PoE+ (up to 600 mA)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Data rate10G Base-T 
Ports
PoEPoE+ (up to 600 mA) 
Improved Common Mode RejectionNo 
Operating Temperature 0 °C up to +70 °C
Insulation Test Voltage1500 V (RMS)
MountSMT 
Inductance120 µH
Design Kit
749052050
10G Base-T, 1, PoE+ (up to 1 A)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Data rate10G Base-T 
Ports
PoEPoE+ (up to 1 A) 
Improved Common Mode RejectionNo 
Operating Temperature 0 °C up to +70 °C
Insulation Test Voltage1500 V (RMS)
MountSMT 
Inductance180 µH
Design Kit
749053010
10G Base-T, 1, PoE (up to 350 mA)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Data rate10G Base-T 
Ports
PoEPoE (up to 350 mA) 
Improved Common Mode RejectionNo 
Operating Temperature 0 °C up to +70 °C
Insulation Test Voltage1500 V (RMS)
MountSMT 
Inductance120 µH
Design Kit
749050017
10G Base-T, 1, non-PoE
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Data rate10G Base-T 
Ports
PoEnon-PoE 
Improved Common Mode RejectionNo 
Operating Temperature -40 °C up to +85 °C
Insulation Test Voltage1500 V (RMS)
MountSMT 
Inductance120 µH
Design Kit
749050018
10G Base-T, 1, non-PoE
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Data rate10G Base-T 
Ports
PoEnon-PoE 
Improved Common Mode RejectionNo 
Operating Temperature -40 °C up to +85 °C
Insulation Test Voltage1500 V (RMS)
MountSMT 
Inductance120 µH
Design Kit
749053011
10G Base-T, 1, PoE (up to 350 mA)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Data rate10G Base-T 
Ports
PoEPoE (up to 350 mA) 
Improved Common Mode RejectionNo 
Operating Temperature 0 °C up to +70 °C
Insulation Test Voltage1500 V (RMS)
MountSMT 
Inductance200 µH
Design Kit
749053012
10G Base-T, 1, PoE (up to 350 mA)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Data rate10G Base-T 
Ports
PoEPoE (up to 350 mA) 
Improved Common Mode RejectionNo 
Operating Temperature -40 °C up to +85 °C
Insulation Test Voltage1500 V (RMS)
MountSMT 
Inductance200 µH
Design Kit
749053013
10G Base-T, 1, PoE (up to 350 mA)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Data rate10G Base-T 
Ports
PoEPoE (up to 350 mA) 
Improved Common Mode RejectionNo 
Operating Temperature -40 °C up to +85 °C
Insulation Test Voltage1500 V (RMS)
MountSMT 
Inductance120 µH
Design Kit
749052012
10G Base-T, 1, PoE+ (up to 600 mA)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Data rate10G Base-T 
Ports
PoEPoE+ (up to 600 mA) 
Improved Common Mode RejectionNo 
Operating Temperature 0 up to +70 °C
Insulation Test Voltage1500 V (RMS)
MountSMT 
Inductance120 µH
Design Kit
749052051
10G Base-T, 1, PoE+ (up to 1 A)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Data rate10G Base-T 
Ports
PoEPoE+ (up to 1 A) 
Improved Common Mode RejectionNo 
Operating Temperature -40 °C up to +85 °C
Insulation Test Voltage1500 V (RMS)
MountSMT 
Inductance120 µH
Design Kit
749052014
10G Base-T, 1, non-PoE
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Data rate10G Base-T 
Ports
PoEnon-PoE 
Improved Common Mode RejectionNo 
Operating Temperature -40 °C up to +105 °C
Insulation Test Voltage1500 V (RMS)
MountSMT 
Inductance180 µH
Design Kit
749054010
10G Base-T, 1, PoE (up to 350 mA)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Data rate10G Base-T 
Ports
PoEPoE (up to 350 mA) 
Improved Common Mode RejectionNo 
Operating Temperature -40 °C up to +85 °C
Insulation Test Voltage4000 V (RMS)
MountSMT 
Inductance120 µH
Design Kit

Assortments

Articles from this product series can be found in the following assortments: