| Topology | Other Topology |
| Input voltage | 380-400 V |
| Output 1 | 800 V / 12.5 A |
| IC revision | E3 |
This reference design provides an overview on how to implement a three-level, three-phase, SiC-based AC/DC converter with bi-directional functionality. A high switching frequency of 50 kHz reduces the size of magnetics for the filter design and as a result a higher power density. SiC MOSFETs with switching loss enable higher DC bus voltages of up to 800V and lower switching losses with a peak efficiency of >97%. This design is configurable to work as a two-level or three-level rectifier.
Order Code | Datasheet | Simulation | Downloads | Status | Product series | λDom typ.(nm) | Emitting Color | λPeak typ.(nm) | IV typ.(mcd) | VF typ.(V) | Chip Technology | 2θ50% typ.(°) | C | VR(V (DC)) | dV/dt(V/µs) | DF @ 1 kHz(%) | RISO | Pitch(mm) | L(mm) | Packaging | L(µH) | ISAT,10%(A) | ISAT,30%(A) | IR,40K(A) | IRP,40K(A) | fres(MHz) | Size | Version | VIN | VOut1(V (DC)) | IOut1(A) | Type of Insulation | fswitch(kHz) | ∫Udt(Vµs) | NPRI : NSEC | VT(V (RMS)) | Mount | Endurance(h) | IRIPPLE(mA) | ILeak(µA) | DF(%) | Ø D(mm) | Z(mΩ) | RESR(Ω) | G(mm) | Working Voltage(V (AC)) | Operating Temperature | W(mm) | H(mm) | IR(mA) | Ti | Tl(mm) | Pins | Z @ 100 MHz(Ω) | Zmax(Ω) | Test Condition Zmax | IR 2(mA) | RDC max.(Ω) | Type | IR(mA) | Z @ 1 GHz(Ω) | Samples | |
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