IC manufacturers Texas Instruments

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Texas Instruments UCC21530 | Demoboard TIDA-010210

6.6-kW three-phase, three-level ANPC inverter/PFC bidirectional power stage reference design

Overview

TopologyPower Factor Correction
Input voltage600-1000 V
Switching frequency50-60 kHz
Output 1400 V / 10 A

Description

This reference design provides a design template for implementing a three-level, three-phase, silicon carbide/gallium nitride (SiC/GaN) based ANPC inverter power stage. The use of fast-switching power devices makes it possible to switch at a higher frequency of 100 kHz, reducing the size of magnetics for the filter and increasing the power density of the power stage. The multilevel topology allows the use of 600-V rated power devices at higher DC bus voltages of up to 1000 V. The lower switching voltage stress reduces switching losses resulting in a peak efficiency of 98.5%. This design is modular in construction, making it configurable to work with SiC or GaN power devices with the same filter stage.

Features

  • Power stage for three phase inverters/PFCs usingSiC/GaN switch
  • 650-V rated switches in 800-V system (due tothree levels)
  • Novel on-board protection implemented using CLBof C2000
  • Iso-dual channel driver supports high frequencyoperation (100KHz)
  • Shunt based current sense (high accuracy andlinearity over temperature)

Typical applications

  • Energy storage power conversion system (PCS)
  • Solar String Inverters, Solar Central Inverters

More information

Products

Order Code Data­sheet Simu­lation Downloads Product seriesApplicationPCB/Cable/PanelModularityWire SectionλDom typ.
(nm)
Emitting ColorλPeak typ.
(nm)
IV typ.
(mcd)
VF typ.
(V)
Chip Technology50% typ.
(°)
RDC
(Ω)
L
(µH)
ISAT
(A)
fres
(MHz)
Tol. LRDC max.
(Ω)
Core MaterialVINVOut1
(V (DC))
IOut1
(A)
Type of Insulationfswitch
(kHz)
∫Udt
(Vµs)
NPRI : NSECVT
(V (RMS))
L
(mm)
MountW
(mm)
H
(mm)
TiTl
(mm)
PinsZ @ 100 MHz
(Ω)
Zmax
(Ω)
Test Condition ZmaxIR
(A)
Z @ 1 GHz
(Ω)
TypeRowsGenderPackaging Samples
691214110002SPEC
6 files WR-TBL Series 2141 - 3.50 mm Horiz. Entry Modular Rising Cage Clamp PCB Yes 24 to 16 (AWG) 0.2 to 1 (mm²) 7.05 THT 2 10 Horizontal Box
782853121SPEC
8 files WE-CBA SMT EMI Suppression Ferrite Bead 0.035 0.035 2 SMT 1.2 0.9 120 180 300 MHz 2.5 114.591 High Current
74279228260SPEC
8 files WE-MPSB EMI Multilayer Power Suppression Bead 0.008 1.6 SMT 0.8 0.8 26 39 515 MHz 6.5 33 High Current
750313638SPEC
7 files WE-PPTI Push-Pull Transformers 340 min. 5 V (DC) 5 0.65 Reinforced 300 - 620 10 1:1.3 5000 9.14 SMT 12.7 7.62 Tape and Reel
61300211121SPEC
6 files WR-PHD 2.54 mm THT Pin Header 5.08 THT 2 3 Straight Single Pin Header Bag
61300311121SPEC
6 files WR-PHD 2.54 mm THT Pin Header 7.62 THT 3 3 Straight Single Pin Header Bag
750342879SPEC
7 files WE-PPTI Push-Pull Transformers 200 min. 5 V (DC) 17 0.25 Reinforced 420 9 1:3.5 5000 9.14 SMT 12.7 7.62 Tape and Reel
74404020100SPEC
8 files WE-LQS SMT Power Inductor 0.86 10 0.6 39 ±20% 2 SMT 1.6 1 0.5
74650073RSPEC
6 files WP-THRBU REDCUBE THR with internal through-hole thread THR 7 3 M3 2.5 4 50 Tape and Reel
150060VS55040SPEC
6 files WL-SMCD SMT Mono-color Chip LED Diffused 573 Bright Green 575 60 2 AlInGaP 140 1.6 0.8 0.4 Tape and Reel
7443783533220SPEC
8 files WE-HCFT THT High Current Inductor 22 49.4 8.15 ±20% 0.0088 MnZn 34.5 THT 36 35 23.2
750344413SPEC
PFC Inductor
Samples
Order Code Data­sheet Simu­lation Downloads Product seriesApplicationPCB/Cable/PanelModularityWire SectionλDom typ.
(nm)
Emitting ColorλPeak typ.
(nm)
IV typ.
(mcd)
VF typ.
(V)
Chip Technology50% typ.
(°)
RDC
(Ω)
L
(µH)
ISAT
(A)
fres
(MHz)
Tol. LRDC max.
(Ω)
Core MaterialVINVOut1
(V (DC))
IOut1
(A)
Type of Insulationfswitch
(kHz)
∫Udt
(Vµs)
NPRI : NSECVT
(V (RMS))
L
(mm)
MountW
(mm)
H
(mm)
TiTl
(mm)
PinsZ @ 100 MHz
(Ω)
Zmax
(Ω)
Test Condition ZmaxIR
(A)
Z @ 1 GHz
(Ω)
TypeRowsGenderPackaging Samples