IC manufacturers Texas Instruments

IC manufacturers (103)

Texas Instruments TPS23754 | Demoboard PMP22301

IEEE 802.3at, high efficiency, PoE interface and DC/DC controller

Overview

TopologyOther Topology
Input voltage24-48 V
Output 124 V / 0.9 A
IC revisionB

Description

The TPS23754 and TPS23756 devices have a combined power-over-ethernet (PoE), powered-device (PD) interface, and current-mode DC-DC controller optimized specifically for isolated converters. The PoE interface supports the IEEE 802.3at standard.The TPS23754 and TPS23756 support a number of input voltage ORing options including highest voltage, external adapter preference, and PoE preference. These features allow the designer to determine which power source will carry the load under all conditions.The PoE interface features the new extended hardware classification necessary for compatibility with high-power midspan power sourcing equipment (PSE) per IEEE 802.3at. The detection signature pin can also be used to force power from the PoE source off. Classification can be programmed to any of the defined types with a single resistor.The DC-DC controller features two complementary gate drivers with programmable dead time. This simplifies the design of active-clamp forward converters or optimized gate drive for highly-efficient flyback topologies. The second gate driver may be disabled if desired for single MOSFET topologies. The controller also features internal soft start, bootstrap start-up source, current-mode compensation, and a 78% maximum duty cycle. A programmable and synchronizable oscillator allows design optimization for efficiency and eases use of the controller to upgrade existing power supply designs. Accurate programmable blanking, with a default period, simplifies the usual current-sense filter design trade-offs.The TPS23754 device has a 15-V converter start-up while the TPS23756 device has a 9-V converter start-up. The TPS23754-1 replaces the PPD pin with a no-connect for increased pin spacing.

Features

  • Powers up to 30-W (Input) PDs
  • DC-DC Control Optimized for Isolated Converters
  • Supports High-Efficiency Topologies
  • Complete PoE Interface
  • Enhanced Classification per IEEE 802.3at With Status Flag
  • Adapter ORing Support
  • Programmable Frequency With Synchronization
  • Robust 100-V, 0.5-Ω Hotswap MOSFET
  • –40°C to 125°C Junction Temperature Range
  • Industry Standard PowerPAD™ HTSSOP-20

Products

Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
Pins
PCB/Cable/Panel
Modularity
Wire Section
C
Tol. C
VR(V (DC))
DF(%)
RISO
Ceramic Type
L(mm)
W(mm)
H(mm)
Fl(mm)
Packaging
IRP,40K(A)
ISAT,30%(A)
RDC typ.(mΩ)
fres(MHz)
VOP(V)
IR(A)
Working Voltage(V (AC))
Z @ 100 MHz(Ω)
Zmax(Ω)
Test Condition Zmax
IR 2(mA)
RDC max.(mΩ)
Type
Version
VIN
VOut1(V)
IOut1(A)
L(µH)
n
VT(V (RMS))
Size
Vaux(V)
RDC 1(Ω)
RDC 2(Ω)
RDC 3(Ω)
Mount
Data rate
Ports
PoE
Improved CMRR
Operating Temperature
Samples
WE-MAPI SMT Power Inductor, 2, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Pins
Length2 mm
Width1.6 mm
Height1 mm
Performance Rated Current4.35 A
Saturation Current @ 30%7.5 A
DC Resistance40 mΩ
Self Resonant Frequency205 MHz
Operating Voltage80 V
Rated Current2.5 A
DC Resistance53 mΩ
VersionSMT 
Inductance0.33 µH
Size2010 
MountSMT 
Operating Temperature -40 °C up to +125 °C
WE-MAPI SMT Power Inductor, 2, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Pins
Length4 mm
Width4 mm
Height2 mm
Performance Rated Current5.15 A
Saturation Current @ 30%7.1 A
DC Resistance39.9 mΩ
Self Resonant Frequency26 MHz
Operating Voltage80 V
Rated Current3.6 A
DC Resistance48 mΩ
VersionSMT 
Inductance3.3 µH
Size4020 
MountSMT 
Operating Temperature -40 °C up to +125 °C
WR-TBL Series 2141 - 3.50 mm Horiz. Entry Modular, 2, Rising Cage Clamp
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Pins
PCB/Cable/PanelPCB 
ModularityYes 
Wire Section 24 to 16 (AWG) 0.2 to 1 (mm²)
Length7.05 mm
PackagingBox 
Rated Current10 A
Working Voltage300 V (AC)
TypeHorizontal 
MountTHT 
Operating Temperature -40 °C up to +105 °C
WR-PHD Pin Header - Single, 2, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Pins
Insulation Resistance1000 MΩ
Length5.08 mm
PackagingBag 
Rated Current3 A
Working Voltage250 V (AC)
TypeStraight 
MountTHT 
Operating Temperature -40 °C up to +105 °C
WE-LAN LAN Transformer, 24, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Pins24 
Length17.55 mm
Width16 mm
Height7.2 mm
Pad Dimension13.97 mm
Type4PPoE (to 600 mA) 
VersionSMT 
Inductance350 µH
Turns Ratio1:1 
Insulation Test Voltage1500 V (RMS)
MountSMT 
Data rate10/100/1000BASE-T 
Ports
PoE4PPoE (up to 600 mA) 
Improved Common Mode RejectionNo 
Operating Temperature -40 °C up to +105 °C
WE-CBF SMT EMI Suppression Ferrite Bead, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Length2 mm
Width1.2 mm
Height0.0009 mm
Pad Dimension0.5 mm
Rated Current1.5 A
Impedance @ 100 MHz600 Ω
Maximum Impedance700 Ω
Maximum Impedance150 MHz 
Rated Current 22000 mA
DC Resistance150 mΩ
TypeHigh Current 
VersionSMT 
Size0805 
MountSMT 
Operating Temperature -55 °C up to +125 °C
WCAP-CSGP MLCCs 50 V(DC), –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance1 µF
Capacitance±10% 
Rated Voltage50 V (DC)
Dissipation Factor10 %
Insulation Resistance0.1 GΩ
Ceramic TypeX7R Class II 
Length2 mm
Width1.25 mm
Height1.25 mm
Pad Dimension0.5 mm
Packaging7" Tape & Reel 
Size0805 
Operating Temperature -55 °C up to +125 °C
WCAP-CSGP MLCCs 100 V(DC), –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance100 nF
Capacitance±10% 
Rated Voltage100 V (DC)
Dissipation Factor2.5 %
Insulation Resistance1 GΩ
Ceramic TypeX7R Class II 
Length2 mm
Width1.25 mm
Height1.25 mm
Pad Dimension0.5 mm
Packaging7" Tape & Reel 
Size0805 
Operating Temperature -55 °C up to +125 °C
WCAP-CSGP MLCCs 100 V(DC), –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance10 nF
Capacitance±10% 
Rated Voltage100 V (DC)
Dissipation Factor2.5 %
Insulation Resistance10 GΩ
Ceramic TypeX7R Class II 
Length1.6 mm
Width0.8 mm
Height0.8 mm
Pad Dimension0.4 mm
Packaging7" Tape & Reel 
Size0603 
Operating Temperature -55 °C up to +125 °C
WE-PoE+ Power over Ethernet Plus Transformer, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Length21.8 mm
Width29.65 mm
Height11.43 mm
VersionCCM Flyback 
Input Voltage 17 - 57 V (DC)
Output Voltage 124 V
Output Current 11 A
Inductance80 µH
Turns Ratio1:1:0.46 
Insulation Test Voltage1500 V (RMS)
SizeEFD20 
Auxiliary Voltage10.6 V
DC Resistance 10.125 Ω
DC Resistance 20.1 Ω
DC Resistance 30.165 Ω
MountSMT 
Operating Temperature -40 °C up to +125 °C