IC manufacturers Texas Instruments

IC manufacturers (103)

Texas Instruments SN6505 / LM76003

10-kW, bidirectional three-phase three-level (T-type) inverter and PFC reference design

Overview

TopologyBuck Converter
Input voltage15 V
Output 112 V
IC revisionE5

Description

This verified reference design provides an overview on how to implement a three-level three-phase SiC based DC:AC T-type inverter stage. Higher switching frequency of 50KHz reduces the size of magnetics for the filter design and enables higher power density. The use of SiC MOSFETs with switching loss ensures higher DC bus voltages of up to 1000V and lower switching losses with a peak efficiency of 99 percent. This design is configurable to work as a two-level or three-level inverter.The system is controlled by a single C2000 microcontroller (MCU), TMS320F28379D, which generates PWM waveforms for all power electronic switching devices under all operating modes.

Features

  • Rated nominal/max input voltage at 800V/1000VDC
  • Max 10kW/10KVA output power at 400VAC 50/60Hz T-type connection
  • Operating power factor range from 0.7 lag to 0.7 lead
  • High voltage (1200V) SiCMosFET based full bridge inverter for peak efficiency of 99%
  • <2% output current THD at full load
  • Isolated current sensing using AMC1301 for load current monitoring
  • Isolated driver ISO5852S with reinforced isolation for driving High voltage SiC MOSFET and UCC5320S for driving middle Si IGBT

Typical applications

  • Servo drive active frontend, Single phase string inverter, Three Phase String Inverter, Traction inverter motor control, Central inverter, DC fast charging station
  • High-voltage direct current (HVDC) power transmission, Power conversion system (PCS)
  • Single phase wireless EV charging station, Three phase wireless EV charging station

More information

Products

Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
C
VR(V (DC))
dV/dt(V/µs)
DF @ 1 kHz(%)
RISO
Pitch(mm)
L(mm)
Packaging
L(µH)
ISAT,10%(A)
ISAT,30%(A)
IR,40K(A)
IRP,40K(A)
fres(MHz)
Size
Version
VIN
VOut1(V (DC))
IOut1(A)
Type of Insulation
fswitch(kHz)
∫Udt(Vµs)
NPRI : NSEC
VT(V (RMS))
Mount
Endurance(h)
IRIPPLE(mA)
ILeak(µA)
DF(%)
Ø D(mm)
Z(mΩ)
RESR(mΩ)
G(mm)
Working Voltage(V (AC))
Operating Temperature
W(mm)
H(mm)
IR(mA)
Ti
Tl(mm)
Pins
Z @ 100 MHz(Ω)
Zmax(Ω)
Test Condition Zmax
IR 2(mA)
RDC max.(Ω)
Type
IR(mA)
Z @ 1 GHz(Ω)
Samples
WCAP-FTBP Film Capacitors, 150 nF, 630 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance150 nF
Rated Voltage630 V (DC)
Rate of Voltage Rise200 V/µs
Dissipation Factor0.1 %
Insulation Resistance30 GΩ
Pitch15 mm
Length18 mm
PackagingCarton 
SizePitch 15 mm 
VersionTHT 
ESR61.22 mΩ
Pin length4 mm
Operating Temperature -40 °C up to +105 °C
Width7 mm
Height13 mm
WCAP-PSLP Aluminum Polymer Capacitors, 33 µF, 20 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance33 µF
Rated Voltage20 V (DC)
Pitch6.6 mm
Length5.8 mm
Packaging15" Tape & Reel 
Size6.3 x 5.8 
MountV-Chip SMT 
Endurance 2000
Ripple Current2200 mA
Leakage Current600 µA
Dissipation Factor8 %
Diameter6.3 mm
ESR35 mΩ
Operating Temperature -55 °C up to +105 °C
Width6.6 mm
WCAP-ASLL Aluminum Electrolytic Capacitors, 100 µF, 50 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance100 µF
Rated Voltage50 V (DC)
Insulation Resistance1 MΩ
Length10.5 mm
Packaging15" Tape & Reel 
Size8.0 x 10.5 
VersionSMT 
MountV-Chip SMT 
Endurance 5000
Ripple Current350 mA
Leakage Current50 µA
Dissipation Factor12 %
Diameter8 mm
Impedance340 mΩ
ESR227.529 mΩ
Operating Temperature -55 °C up to +105 °C
Width8.3 mm
WCAP-ATLI Aluminum Electrolytic Capacitors, 220 µF, 50 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance220 µF
Rated Voltage50 V (DC)
Pitch5 mm
Length16 mm
PackagingAmmopack 
Endurance 5000
Ripple Current1385 mA
Leakage Current110 µA
Dissipation Factor8 %
Diameter10 mm
WE-CBF SMT EMI Suppression Ferrite Bead, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Length1.6 mm
Size0603 
VersionSMT 
MountSMT 
Operating Temperature -55 °C up to +125 °C
Width0.8 mm
Height0.8 mm
Rated Current600 mA
Impedance @ 100 MHz1000 Ω
Maximum Impedance1050 Ω
Maximum Impedance120 MHz 
Rated Current 2830 mA
DC Resistance0.3 Ω
TypeWide Band 
Rated Current600 mA
Impedance @ 1 GHz186 Ω
WE-MPSB EMI Multilayer Power Suppression Bead, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Length1.6 mm
Size0603 
VersionSMT 
MountSMT 
Operating Temperature -55 °C up to +125 °C
Width0.8 mm
Height0.8 mm
Impedance @ 100 MHz26 Ω
Maximum Impedance39 Ω
Maximum Impedance515 MHz 
Rated Current 26500 mA
DC Resistance0.008 Ω
TypeHigh Current 
Rated Current6500 mA
Impedance @ 1 GHz33 Ω
WE-MPSB EMI Multilayer Power Suppression Bead, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Length3.2 mm
Size1206 
VersionSMT 
MountSMT 
Operating Temperature -55 °C up to +125 °C
Width1.6 mm
Height1.1 mm
Impedance @ 100 MHz110 Ω
Maximum Impedance118 Ω
Maximum Impedance150 MHz 
Rated Current 25400 mA
DC Resistance0.015 Ω
TypeHigh Current 
Rated Current5400 mA
Impedance @ 1 GHz44 Ω
WE-PD SMT Power Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Length12 mm
Inductance22 µH
Saturation Current @ 10%6.5 A
Saturation Current @ 30%8 A
Rated Current5.3 A
Performance Rated Current7 A
Self Resonant Frequency10 MHz
Size1210 
VersionStandard 
MountSMT 
Operating Temperature -40 °C up to +125 °C
Width12 mm
Height10 mm
Pins
DC Resistance0.028 Ω
Rated Current5300 mA
WE-PPTI Push-Pull Transformers, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Length9.14 mm
PackagingTape and Reel 
Inductance340 µH
Size1209 
VersionPush-Pull 
Input Voltage 5 V (DC)
Output Voltage 15 V (DC)
Output Current 10.65 A
Type of InsulationReinforced 
Switching Frequency 300 - 620
Voltage-µSecond10 Vµs
Turns Ratio1:1.3 
Insulation Test Voltage5000 V (RMS)
MountSMT 
Operating Temperature -40 °C up to +125 °C
Width12.7 mm
Height7.62 mm
WR-PHD Pin Header - Single, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Insulation Resistance1000 MΩ
Pitch2.54 mm
Length5.08 mm
PackagingBag 
MountTHT 
Working Voltage250 V (AC)
Operating Temperature -40 °C up to +105 °C
Pins
TypeStraight 
Rated Current3000 mA
WP-THRBU REDCUBE THR with internal through-hole thread, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
PackagingTape and Reel 
MountTHR 
Operating Temperature -55 °C up to +150 °C
Width7 mm
Height3 mm
Inner ThreadM3 
Thread Length2.5 mm
Pins
Rated Current50000 mA
750343811
Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Product series Inductor
Length42 mm
PackagingTray 
Inductance9.5 µH
SizeToroid 
MountTHT 
Pin length4 mm
Operating Temperature -40 °C up to +125 °C
Width27 mm
Height42 mm
750343810
Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Product series Inductor
Length67.5 mm
PackagingTray 
Inductance340 µH
SizeToroid 
MountTHT 
Pin length4 mm
Operating Temperature -40 °C up to +125 °C
Width67.5 mm
Height39.88 mm