IC-Hersteller Texas Instruments
IC-Hersteller (103)
- Alle Hersteller
Analog Devices
Infineon Technologies
Microchip
Onsemi
Renesas
ROHM
STMicroelectronics
Texas Instruments
- 3peak incorporated (28)
- Ablic (23)
- Acco Semiconductor (1)
- Advanced Power (4)
- Allegro Microsystems (100)
- Alpha & Omega Semiconductor (37)
- AnalogySemi (3)
- AnDAPT Inc (204)
- Anpec (13)
- AXElite (2)
- Backward (6)
- Bright Power Semiconductor (1)
- Broadcom (46)
- Cambridge GaN Devices (18)
- Chipanalog Micro (10)
- Cologne Chips (1)
- Convenient Power (1)
- Dialog Semiconductor (12)
- Diodes Incorporated (259)
- Divimath (8)
- Elmos AG (1)
- EPC (140)
- e-Peas Semiconductors (1)
- Eta Solutions Co. Ltd. (9)
- GaN Systems (8)
- GaNPower (3)
- Giantec (1)
- Gstek Wuxi (1)
- Helix Semiconductor (7)
- IKON (1)
- Indie Semiconductor (8)
- Innovision Semiconductor Inc (2)
- Intel (68)
- Inventchip Technology (3)
- ISSI (51)
- JoulWatt (20)
- KDPOF (3)
- Kinetic Technology (8)
- Lattice semiconductor Corporation (38)
- Littelfuse (1)
- Lumissil Microsystems (8)
- M3 Technology (M3Tek) (7)
- Macnica (22)
- Marvell Semiconductor (1)
- MaxLinear (181)
- Menlo Micro (1)
- MikroE (25)
- MindCet (2)
- Monolithic Power Systems (980)
- Navitas Semiconductor Inc (6)
- NewEdge Technologies, Inc. (1)
- Nexperia (267)
- Nisshinbo Micro Device Inc. (10)
- Novosense Micro (1)
- NXP (336)
- O2 Micro International Ltd (10)
- On Bright (7)
- Panasonic (2)
- PN Junction Semiconductor (2)
- Power Integrations (117)
- Powermat (1)
- Pulsiv (19)
- Qorvo (97)
- Realsil SuRealsil(tek) Microelectronics (1)
- Richtek (297)
- Sanken Electric Co., Ltd. (16)
- Sckipio (6)
- Semtech (86)
- SG-Micro (57)
- SiFive (2)
- Silanna Semiconductor (9)
- Silergy Corporation (33)
- Silicon Laboratory Inc. (108)
- Silicontent Technology (59)
- Silvertel (59)
- Skycore Semiconductors (1)
- Skyworks (33)
- Southchip (14)
- Summit Wireless (1)
- Tagore Tech (7)
- Taiwan Semiconductor (1)
- TDK Corporation (1)
- Tempo Semiconductor (1)
- Torex (37)
- Toshiba (25)
- Transphorm (21)
- TransSIP (2)
- Union (21)
- uPI Semiconductor (2)
- Valens Semiconductor (31)
- Wise Integration (3)
- Wolfspeed (23)
- Xilinx (22)
- XL Semiconductor (3)
- XYSemi (62)
Texas Instruments SN6505 / LM76003
10-kW, bidirectional three-phase three-level (T-type) inverter and PFC reference design
Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 15 V |
| Ausgang 1 | 12 V |
| IC-Revision | E5 |
Beschreibung
This verified reference design provides an overview on how to implement a three-level three-phase SiC based DC:AC T-type inverter stage. Higher switching frequency of 50KHz reduces the size of magnetics for the filter design and enables higher power density. The use of SiC MOSFETs with switching loss ensures higher DC bus voltages of up to 1000V and lower switching losses with a peak efficiency of 99 percent. This design is configurable to work as a two-level or three-level inverter.The system is controlled by a single C2000 microcontroller (MCU), TMS320F28379D, which generates PWM waveforms for all power electronic switching devices under all operating modes.
Eigenschaften
- Rated nominal/max input voltage at 800V/1000VDC
- Max 10kW/10KVA output power at 400VAC 50/60Hz T-type connection
- Operating power factor range from 0.7 lag to 0.7 lead
- High voltage (1200V) SiCMosFET based full bridge inverter for peak efficiency of 99%
- <2% output current THD at full load
- Isolated current sensing using AMC1301 for load current monitoring
- Isolated driver ISO5852S with reinforced isolation for driving High voltage SiC MOSFET and UCC5320S for driving middle Si IGBT
Typische Anwendungen
- Servo drive active frontend, Single phase string inverter, Three Phase String Inverter, Traction inverter motor control, Central inverter, DC fast charging station
- High-voltage direct current (HVDC) power transmission, Power conversion system (PCS)
- Single phase wireless EV charging station, Three phase wireless EV charging station
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | C | VR(V (DC)) | dV/dt(V/µs) | DF @ 1 kHz(%) | RISO | Raster(mm) | L(mm) | Verpackung | L(µH) | ISAT,10%(A) | ISAT,30%(A) | IR,40K(A) | IRP,40K(A) | fres(MHz) | Bauform | Version | Vin | VOut1(V (DC)) | IOut1(A) | Isolierungstyp | fswitch(kHz) | ∫Udt(Vµs) | NPRI : NSEC | VT(V (RMS)) | Montageart | Endurance(h) | IRIPPLE(mA) | ILeak(µA) | DF(%) | Ø D(mm) | Z(mΩ) | RESR(mΩ) | G(mm) | Arbeitsspannung(V (AC)) | Betriebstemperatur | B(mm) | H(mm) | IR 1(mA) | Ti | Tl(mm) | Pins | Z @ 100 MHz(Ω) | Zmax(Ω) | Testbedingung Zmax | IR 2(mA) | RDC max.(Ω) | Typ | IR(mA) | Z @ 1 GHz(Ω) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WCAP-FTBP Folienkondensatoren, 150 nF, 630 V (DC) | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-FTBP Folienkondensatoren | Kapazität150 nF | Nennspannung630 V (DC) | Spannungsanstiegsgeschwindigkeit200 V/µs | Verlustfaktor0.1 % | Isolationswiderstand30 GΩ | Raster15 mm | Länge18 mm | VerpackungKarton | – | – | – | – | – | – | BauformRaster 15 mm | VersionTHT | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | ESR (Serienersatzwiderstand)61.22 mΩ | Pin Länge4 mm | – | Betriebstemperatur -40 °C up to +105 °C | Breite7 mm | Höhe13 mm | – | – | – | – | – | – | – | – | – | – | – | – | ||||
 | WCAP-PSLP Aluminium-Polymer-Kondensatoren, 33 µF, 20 V (DC) | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-PSLP Aluminium-Polymer-Kondensatoren | Kapazität33 µF | Nennspannung20 V (DC) | – | – | – | Raster6.6 mm | Länge5.8 mm | Verpackung15" Tape & Reel | – | – | – | – | – | – | Bauform6.3 x 5.8 | – | – | – | – | – | – | – | – | – | MontageartV-Chip SMT | Endurance 2000 | Rippelstrom2200 mA | Leckstrom600 µA | Verlustfaktor8 % | Durchmesser6.3 mm | – | ESR (Serienersatzwiderstand)35 mΩ | – | – | Betriebstemperatur -55 °C up to +105 °C | Breite6.6 mm | – | – | – | – | – | – | – | – | – | – | – | – | – | ||||
 | WCAP-ASLL Aluminium-Elektrolytkondensatoren, 100 µF, 50 V (DC) | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-ASLL Aluminium-Elektrolytkondensatoren | Kapazität100 µF | Nennspannung50 V (DC) | – | – | Isolationswiderstand1 MΩ | – | Länge10.5 mm | Verpackung15" Tape & Reel | – | – | – | – | – | – | Bauform8.0 x 10.5 | VersionSMT | – | – | – | – | – | – | – | – | MontageartV-Chip SMT | Endurance 5000 | Rippelstrom350 mA | Leckstrom50 µA | Verlustfaktor12 % | Durchmesser8 mm | Impedanz340 mΩ | ESR (Serienersatzwiderstand)227.529 mΩ | – | – | Betriebstemperatur -55 °C up to +105 °C | Breite8.3 mm | – | – | – | – | – | – | – | – | – | – | – | – | – | ||||
 | WCAP-ATLI Aluminium-Elektrolytkondensatoren, 220 µF, 50 V (DC) | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-ATLI Aluminium-Elektrolytkondensatoren | Kapazität220 µF | Nennspannung50 V (DC) | – | – | – | Raster5 mm | Länge16 mm | VerpackungAmmopack | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | Endurance 5000 | Rippelstrom1385 mA | Leckstrom110 µA | Verlustfaktor8 % | Durchmesser10 mm | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | ||||
 | WE-CBF SMT-Ferrit, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-CBF SMT-Ferrit | – | – | – | – | – | – | Länge1.6 mm | – | – | – | – | – | – | – | Bauform0603 | VersionSMT | – | – | – | – | – | – | – | – | MontageartSMT | – | – | – | – | – | – | – | – | – | Betriebstemperatur -55 °C up to +125 °C | Breite0.8 mm | Höhe0.8 mm | Nennstrom [1]600 mA | – | – | – | Impedanz @ 100 MHz1000 Ω | Maximale Impedanz1050 Ω | Maximale Impedanz120 MHz | Nennstrom 2830 mA | Gleichstromwiderstand0.3 Ω | TypBreitband | Nennstrom600 mA | Impedanz @ 1 GHz186 Ω | ||||
 | WE-MPSB EMI Multilayer Power Suppression Bead, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MPSB EMI Multilayer Power Suppression Bead | – | – | – | – | – | – | Länge1.6 mm | – | – | – | – | – | – | – | Bauform0603 | VersionSMT | – | – | – | – | – | – | – | – | MontageartSMT | – | – | – | – | – | – | – | – | – | Betriebstemperatur -55 °C up to +125 °C | Breite0.8 mm | Höhe0.8 mm | – | – | – | – | Impedanz @ 100 MHz26 Ω | Maximale Impedanz39 Ω | Maximale Impedanz515 MHz | Nennstrom 26500 mA | Gleichstromwiderstand0.008 Ω | TypHochstrom | Nennstrom6500 mA | Impedanz @ 1 GHz33 Ω | ||||
| WE-MPSB EMI Multilayer Power Suppression Bead, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MPSB EMI Multilayer Power Suppression Bead | – | – | – | – | – | – | Länge3.2 mm | – | – | – | – | – | – | – | Bauform1206 | VersionSMT | – | – | – | – | – | – | – | – | MontageartSMT | – | – | – | – | – | – | – | – | – | Betriebstemperatur -55 °C up to +125 °C | Breite1.6 mm | Höhe1.1 mm | – | – | – | – | Impedanz @ 100 MHz110 Ω | Maximale Impedanz118 Ω | Maximale Impedanz150 MHz | Nennstrom 25400 mA | Gleichstromwiderstand0.015 Ω | TypHochstrom | Nennstrom5400 mA | Impedanz @ 1 GHz44 Ω | ||||
 | WE-PD Speicherdrossel, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD Speicherdrossel | – | – | – | – | – | – | Länge12 mm | – | Induktivität22 µH | Sättigungsstrom 16.5 A | Sättigungsstrom @ 30%8 A | Nennstrom5.3 A | Performance Nennstrom7 A | Eigenresonanzfrequenz10 MHz | Bauform1210 | VersionGestanzt | – | – | – | – | – | – | – | – | MontageartSMT | – | – | – | – | – | – | – | – | – | Betriebstemperatur -40 °C up to +125 °C | Breite12 mm | Höhe10 mm | – | – | – | Pins2 | – | – | – | – | Gleichstromwiderstand0.028 Ω | – | Nennstrom5300 mA | – | ||||
 | WE-PPTI Push-Pull Transformers, –, – | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PPTI Push-Pull Transformers | – | – | – | – | – | – | Länge9.14 mm | VerpackungTape and Reel | Induktivität340 µH | – | – | – | – | – | Bauform1209 | VersionPush-Pull | Input Voltage 5 V (DC) | Ausgangsspannung 15 V (DC) | Ausgangsstrom 10.65 A | IsolierungstypVerstärkt | Switching Frequency 300 - 620 | Spannung-µSekunde10 Vµs | Übersetzungsverhältnis1:1.3 | Prüfspannung5000 V (RMS) | MontageartSMT | – | – | – | – | – | – | – | – | – | Betriebstemperatur -40 °C up to +125 °C | Breite12.7 mm | Höhe7.62 mm | – | – | – | – | – | – | – | – | – | – | – | – | |||
 | WR-PHD Stiftleisten - Einreihig, –, – | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWR-PHD Stiftleisten - Einreihig | – | – | – | – | Isolationswiderstand1000 MΩ | Raster2.54 mm | Länge5.08 mm | VerpackungBeutel | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | MontageartTHT | – | – | – | – | – | – | – | – | Arbeitsspannung250 V (AC) | Betriebstemperatur -40 °C up to +105 °C | – | – | – | – | – | Pins2 | – | – | – | – | – | TypGerade | Nennstrom3000 mA | – | |||
 | WP-THRBU REDCUBE THR with internal through-hole thread, –, – | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | – | – | – | – | – | – | – | VerpackungTape and Reel | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | MontageartTHR | – | – | – | – | – | – | – | – | – | Betriebstemperatur -55 °C up to +150 °C | Breite7 mm | Höhe3 mm | – | InnengewindeM3 | Gewindelänge2.5 mm | Pins4 | – | – | – | – | – | – | Nennstrom50000 mA | – | ||||
 | 750343811 | Inductor, –, – | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | Produktserie Inductor | – | – | – | – | – | – | Länge42 mm | VerpackungTray | Induktivität9.5 µH | – | – | – | – | – | BauformToroid | – | – | – | – | – | – | – | – | – | MontageartTHT | – | – | – | – | – | – | – | Pin Länge4 mm | – | Betriebstemperatur -40 °C up to +125 °C | Breite27 mm | Höhe42 mm | – | – | – | – | – | – | – | – | – | – | – | – | ||
 | 750343810 | Inductor, –, – | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | Produktserie Inductor | – | – | – | – | – | – | Länge67.5 mm | VerpackungTray | Induktivität340 µH | – | – | – | – | – | BauformToroid | – | – | – | – | – | – | – | – | – | MontageartTHT | – | – | – | – | – | – | – | Pin Länge4 mm | – | Betriebstemperatur -40 °C up to +125 °C | Breite67.5 mm | Höhe39.88 mm | – | – | – | – | – | – | – | – | – | – | – | – |