IC-Hersteller Texas Instruments

IC-Hersteller (96)

Texas Instruments SN6505 / LM76003

10-kW, bidirectional three-phase three-level (T-type) inverter and PFC reference design

Details

TopologieAbwärtswandler
Eingangsspannung15 V
Ausgang 112 V
IC-RevisionE5

Beschreibung

This verified reference design provides an overview on how to implement a three-level three-phase SiC based DC:AC T-type inverter stage. Higher switching frequency of 50KHz reduces the size of magnetics for the filter design and enables higher power density. The use of SiC MOSFETs with switching loss ensures higher DC bus voltages of up to 1000V and lower switching losses with a peak efficiency of 99 percent. This design is configurable to work as a two-level or three-level inverter.The system is controlled by a single C2000 microcontroller (MCU), TMS320F28379D, which generates PWM waveforms for all power electronic switching devices under all operating modes.

Eigenschaften

  • Rated nominal/max input voltage at 800V/1000VDC
  • Max 10kW/10KVA output power at 400VAC 50/60Hz T-type connection
  • Operating power factor range from 0.7 lag to 0.7 lead
  • High voltage (1200V) SiCMosFET based full bridge inverter for peak efficiency of 99%
  • <2% output current THD at full load
  • Isolated current sensing using AMC1301 for load current monitoring
  • Isolated driver ISO5852S with reinforced isolation for driving High voltage SiC MOSFET and UCC5320S for driving middle Si IGBT

Typische Anwendungen

  • Servo drive active frontend, Single phase string inverter, Three Phase String Inverter, Traction inverter motor control, Central inverter, DC fast charging station
  • High-voltage direct current (HVDC) power transmission, Power conversion system (PCS)
  • Single phase wireless EV charging station, Three phase wireless EV charging station

Weiterführende Informationen

Artikeldaten

Artikel Nr. Daten­blatt Simu­lation Downloads ProduktserieCVR
(V (DC))
dV/dt
(V/µs)
DF @ 1 kHz
(%)
RISOBetriebstemperaturRaster
(mm)
L
(mm)
L
(µH)
ISAT
(A)
BauformVersionVinVOut1
(V (DC))
IOut1
(A)
Isolierungstypfswitch
(kHz)
∫Udt
(Vµs)
NPRI : NSECVT
(V (RMS))
MontageartEndurance
(h)
IRIPPLE
(mA)
ILeak
(µA)
DF
(%)
Ø D
(mm)
Z
(mΩ)
RESR
(mΩ)
W
(mm)
H
(mm)
IR 1
(mA)
TiTl
(mm)
PinsZ @ 100 MHz
(Ω)
Zmax
(Ω)
Testbedingung ZmaxIR 2
(mA)
RDC max.
(Ω)
TypIR
(mA)
Z @ 1 GHz
(Ω)
ReihenG
(mm)
GenderVerpackung Muster
890303325008CSSPEC
8 Dateien WCAP-FTBP Folienkondensatoren150 nF 630 200 0.130000 MΩ -40 °C bis zu +105 °C 15 18 Pitch 15 mm THT 61.22 7 13 4 Karton
875105444004SPEC
7 Dateien WCAP-PSLP Aluminium-Polymer-Kondensatoren33 µF 20 -55 °C bis zu +105 °C 6.6 5.8 6.3 x 5.8 V-Chip SMT 2000 2200 600 8 6.3 35 6.6 15" Tape & Reel
865060653010SPEC
8 Dateien WCAP-ASLL Aluminium-Elektrolytkondensatoren100 µF 501 MΩ -55 °C bis zu +105 °C 10.5 8.0 x 10.5 SMT V-Chip SMT 5000 350 50 12 8 340 227.529 8.3 15" Tape & Reel
860080675015SPEC
7 Dateien WCAP-ATLI Aluminium-Elektrolytkondensatoren220 µF 50 -55 °C bis zu +105 °C 5 16 5000 1385 110 8 10 Ammopack
742792662SPEC
9 Dateien WE-CBF SMT-Ferrit -55 °C bis zu +125 °C 1.6 0603 SMT SMT 0.8 0.8 600 1000 1050 120 MHz 830 0.3 Breitband 600 186
74279228260SPEC
8 Dateien WE-MPSB EMI Multilayer Power Suppression Bead 1.6 0603 SMT SMT 0.8 0.8 26 39 515 MHz 6500 0.008 High Current 6500 33
74279221111SPEC
8 Dateien WE-MPSB EMI Multilayer Power Suppression Bead 3.2 1206 SMT SMT 1.6 1.1 110 118 150 MHz 5400 0.015 High Current 5400 44
7447709220SPEC
8 Dateien WE-PD SMT-Speicherdrossel 12 22 6.5 1210 Standard 12 10 0.028 5300
750313638SPEC
7 Dateien WE-PPTI Push-Pull Transformers -40 °C bis zu +125 °C; including temp rise 9.14 340 1209 Push-Pull 5 V (DC) 5 0.65 Reinforced 300 - 620 10 1:1.3 5000 SMT 12.7 7.62 Tape and Reel
61300211121SPEC
6 Dateien WR-PHD 2.54 mm THT Pin Header1000 MΩ 2.54 5.08 THT 2 Gerade 3000 Single Pin Header Beutel
74650073RSPEC
6 Dateien WP-THRBU REDCUBE THR with internal through-hole thread THR 7 3 M3 2.5 4 50000 Tape and Reel
750343811SPEC
4 Dateien Inductor 42 9.5 15 Toroid THT 27 42 4 Tray
750343810SPEC
4 Dateien Inductor 67.5 340 24 Toroid THT 67.5 39.88 4 Tray
Muster
Artikel Nr. Daten­blatt Simu­lation Downloads ProduktserieCVR
(V (DC))
dV/dt
(V/µs)
DF @ 1 kHz
(%)
RISOBetriebstemperaturRaster
(mm)
L
(mm)
L
(µH)
ISAT
(A)
BauformVersionVinVOut1
(V (DC))
IOut1
(A)
Isolierungstypfswitch
(kHz)
∫Udt
(Vµs)
NPRI : NSECVT
(V (RMS))
MontageartEndurance
(h)
IRIPPLE
(mA)
ILeak
(µA)
DF
(%)
Ø D
(mm)
Z
(mΩ)
RESR
(mΩ)
W
(mm)
H
(mm)
IR 1
(mA)
TiTl
(mm)
PinsZ @ 100 MHz
(Ω)
Zmax
(Ω)
Testbedingung ZmaxIR 2
(mA)
RDC max.
(Ω)
TypIR
(mA)
Z @ 1 GHz
(Ω)
ReihenG
(mm)
GenderVerpackung Muster