IC manufacturers Silvertel

IC manufacturers (103)

Silvertel AG9xxx | Demoboard EVALPOE Eval Board

Ultra-miniature POE

Overview

TopologyOther Topology
IC revision6R

Description

The Ag9900 Power-over-Ethernet (PoE) modules are the smallest POE solution in theworld and designed to extract power from a conventional twisted pair Category 5 Ethernetcable, conforming to the IEEE 802.3af PoE standard.The Ag9900 signature and control circuit provides the PoE compatibility signature requiredby the Power Sourcing Equipment (PSE) before applying up to 15W power to the port. The Ag9900 provides a Class 0 signature.The DC/DC converter operates over a wide input voltage range and provides a regulatedoutput. The DC/DC converter also has built-in short-circuit output protection.

Features

  • Ultra Low Profile
  • Tiny SMT (14mm x 21mm X 13mm) or DIL package (14mm x 21mm X 8mm)
  • IEEE802.3af compliant
  • Low cost
  • Input voltage range 36V to 57V
  • Minimal external components required
  • Short-circuit protection
  • Industrial temperature version available
  • Over temperature protection
  • Industrial Temperature version- MT or LP
  • Adjustable Output
  • 1500V isolation (input to output)

Typical applications

  • PoE Related Application

Products

Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
λDom typ.(nm)
Emitting Color
λPeak typ.(nm)
IV typ.(mcd)
VF typ.(V)
Chip Technology
50% typ.(°)
C
Tol. C
VR(V (DC))
Size
DF(%)
RISO
Ceramic Type
L(mm)
W(mm)
H(mm)
Fl(mm)
Packaging
IRP,40K(A)
ISAT,30%(A)
RDC typ.(mΩ)
fres(MHz)
VOP(V)
Endurance(h)
IRIPPLE(mA)
ILeak(µA)
Pitch(mm)
Ø D(mm)
Pins
IR(mA)
Working Voltage(V (AC))
Z @ 100 MHz(Ω)
Zmax(Ω)
Test Condition Zmax
IR 2(mA)
RDC max.(Ω)
Type
Technical Reference
VDC(V)
VBR(V)
IPeak(A)
PDiss(mW)
VClamp max.(V)
Data rate
Ports
PoE
Improved CMRR
Operating Temperature
VT(V (RMS))
Mount
L(µH)
Samples
WL-SMTW SMT Mono-color TOP LED Waterclear, 625 nm, Red
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Dominant Wavelength [typ.]625 nm
Emitting ColorRed 
Peak Wavelength [typ.]630 nm
Luminous Intensity [typ.]300 mcd
Forward Voltage [typ.]2 V
Chip TechnologyAlInGaP 
Viewing Angle Phi 0° [typ.]120 °
Size3528 
Length3.5 mm
Width2.8 mm
Height1.9 mm
PackagingTape and Reel 
Power Dissipation72 mW
Operating Temperature -40 °C up to +85 °C
MountSMT 
WE-CBF SMT EMI Suppression Ferrite Bead, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Size0805 
Length2 mm
Width1.2 mm
Height0.9 mm
Pad Dimension0.5 mm
Rated Current800 mA
Impedance @ 100 MHz1000 Ω
Maximum Impedance1000 Ω
Maximum Impedance100 MHz 
Rated Current 21000 mA
DC Resistance0.3 Ω
TypeHigh Current 
Operating Temperature -55 °C up to +125 °C
MountSMT 
WE-MAPI SMT Power Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Size4020 
Length4 mm
Width4 mm
Height2 mm
Performance Rated Current6.8 A
Saturation Current @ 30%8.7 A
DC Resistance24.5 mΩ
Self Resonant Frequency40 MHz
Operating Voltage80 V
Pins
Rated Current4600 mA
DC Resistance0.03 Ω
Operating Temperature -40 °C up to +125 °C
MountSMT 
Inductance1.8 µH
WCAP-ATUL Aluminum Electrolytic Capacitors, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance470 µF
Capacitance±20% 
Rated Voltage25 V (DC)
Dissipation Factor14 %
Length16 mm
PackagingAmmopack 
Endurance 7000
Ripple Current1210 mA
Leakage Current117.5 µA
Pitch5 mm
Diameter10 mm
Technical ReferenceATDF160471M025DSPAAG000 
WE-LAN 10G Transformer 10Gbit Base-T, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Length18.29 mm
Width14.7 mm
Height9.05 mm
Pad Dimension13.97 mm
Pitch1270 mm
Pins24 
TypePoE+ 
Data rate10G Base-T 
Ports
PoEPoE+ (up to 1 A) 
Improved Common Mode RejectionNo 
Operating Temperature 0 °C up to +70 °C
Insulation Test Voltage1500 V (RMS)
MountSMT 
Inductance180 µH
WE-TVSP Power TVS Diode, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
SizeDO-214AC 
Length4.24 mm
Width2.67 mm
Height2.25 mm
Leakage Current1 µA
Technical ReferenceSMAJ58A 
DC Operating Voltage58 V
(Reverse) Breakdown Voltage67.8 V
(Reverse) Peak Pulse Current4.3 A
Power Dissipation400000 mW
Clamping Voltage [max.]93.6 V
Operating Temperature -65 °C up to +150 °C
MountSMT 
WR-PHD Pin Header - Single, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Insulation Resistance1000 MΩ
Length5.08 mm
PackagingBag 
Pitch2.54 mm
Pins
Rated Current3000 mA
Working Voltage250 V (AC)
TypeStraight 
Operating Temperature -40 °C up to +105 °C
MountTHT 
WR-PHD Pin Header - Single, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Insulation Resistance1000 MΩ
Length7.62 mm
PackagingBag 
Pitch2.54 mm
Pins
Rated Current3000 mA
Working Voltage250 V (AC)
TypeStraight 
Operating Temperature -40 °C up to +105 °C
MountTHT 
WCAP-CSMH Mid and High Voltage, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance1 nF
Capacitance±10% 
Rated Voltage2000 V (DC)
Size1206 
Dissipation Factor2.5 %
Insulation Resistance10 GΩ
Ceramic TypeX7R Class II 
Length3.2 mm
Width1.6 mm
Height1.6 mm
Pad Dimension0.6 mm
Packaging7" Tape & Reel 
Technical ReferenceX7R1206102KB00DFCT10000 
Operating Temperature -55 °C up to +125 °C