IC manufacturers Analog Devices

IC manufacturers (103)

Analog Devices ADIN1101 | Demoboard AD-RPI-T1LPSE-SL

2-port 10BASE-T1L RPi-based PLCS/DCS/Field Switch with SPoE PSE

Overview

TopologyLAN / POE
Input voltage20-60 V
IC revisionC

Description

The AD-RPI-T1LPSE-SL is a 10BASE-T1L MAC/PHY interface with Single Pair Power over Ethernet (SPoE), designed for developing field devices and applications on the Raspberry Pi platform. It functions as Power Sourcing Equipment (PSE), capable of delivering power to other devices over a 10BASE-T1L network.The board can be powered via USB-C (M1, up to 20V) or through a Pluggable Terminal Block (P21, up to 60V). A synchronous step-down DC-DC converter supplies a regulated 5V to the Raspberry Pi.The system supports SPoE Class 10–12 (nominal 24V) and Class 13–14 (nominal 55V), enabling flexible power configurations for various industrial and embedded applications.Designed for use on the Raspberry Pi platform, the AD-RPI-T1LPSE-SL hardware features a 40-pin GPIO header and uses an extended version of the standard HAT.

Features

Software-controlled power and data forwardingMultiple SPoE classesOn-board 24V/54V power supplyExternal power supply optionOn-board PSE controllerCompatible with Raspberry Pi 3+Multiple USB power optionsSerial Communication Classification Protocol (SCCP)-ready

Typical applications

  • Process control
  • Internet of Things
  • Factory automation

Products

Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
C
Tol. C
Size
Operating Temperature
DF(%)
RISO
Ceramic Type
L(mm)
W(mm)
H(mm)
Fl(mm)
Packaging
IRIPPLE(mA)
ILeak(µA)
Endurance(h)
RESR(mΩ)
Ø D(mm)
Z @ 100 MHz(Ω)
Zmax(Ω)
Test Condition Zmax
IR 2(mA)
RDC max.(Ω)
Type
Winding Style
Number of windings
L(µH)
IR(mA)
VR(V (DC))
Channels
Polarity
VCh max.(V)
ICh Leak max.(µA)
VBR min.(V)
CCh typ.(pF)
IPeak(A)
VCh Clamp ESD typ.(V)
VESD Contact(kV)
L1(µH)
L2(µH)
IR(mA)
ISAT(A)
RDC1 typ(Ω)
RDC2 typ(Ω)
RDC1 max(Ω)
RDC2 max(Ω)
fres(MHz)
Samples
WCAP-CSGP MLCCs 100 V(DC), 47 nF, ±10%
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance47 nF
Capacitance±10% 
Size0603 
Operating Temperature -55 °C up to +125 °C
Dissipation Factor2.5 %
Insulation Resistance2.1 GΩ
Ceramic TypeX7R Class II 
Length1.6 mm
Width0.8 mm
Height0.8 mm
Pad Dimension0.4 mm
Packaging7" Tape & Reel 
Rated Voltage100 V (DC)
WCAP-CSGP MLCCs 100 V(DC), 100 nF, ±10%
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance100 nF
Capacitance±10% 
Size0603 
Operating Temperature -55 °C up to +125 °C
Dissipation Factor5 %
Insulation Resistance1 GΩ
Ceramic TypeX7R Class II 
Length1.6 mm
Width0.8 mm
Height0.8 mm
Pad Dimension0.4 mm
Packaging7" Tape & Reel 
Rated Voltage100 V (DC)
WCAP-HTG5 General Purpose 105°C, 56 µF, ±20%
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance56 µF
Capacitance±20% 
Operating Temperature -55 °C up to +105 °C
Dissipation Factor16 %
Length12.5 mm
PackagingAmmopack 
Ripple Current2400 mA
Leakage Current35.3 µA
Endurance 10000
ESR22 mΩ
Diameter10 mm
Rated Voltage63 V (DC)
WE-CBF SMT EMI Suppression Ferrite Bead, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Size0603 
Operating Temperature -55 °C up to +125 °C
Length1.6 mm
Width0.8 mm
Height0.8 mm
Pad Dimension0.3 mm
Impedance @ 100 MHz1000 Ω
Maximum Impedance1050 Ω
Maximum Impedance120 MHz 
Rated Current 2830 mA
DC Resistance0.3 Ω
TypeWide Band 
Number of windings
Rated Current600 mA
Rated Current600 mA
WE-SL2 SMT Common Mode Line Filter, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Operating Temperature -40 °C up to +125 °C
Length9.2 mm
Width6 mm
Height5 mm
Maximum Impedance6000 Ω
DC Resistance0.207 Ω
Winding Stylebifilar 
Number of windings
Inductance1000 µH
Rated Current800 mA
Rated Voltage80 V (DC)
WE-DD SMT Shielded Coupled Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Size1280 
Operating Temperature -40 °C up to +125 °C
Length12.5 mm
Width12.5 mm
Height8.5 mm
Rated Current 2900 mA
DC Resistance0.65 Ω
TypeCrossed 
Inductance220 µH
Rated Current900 mA
Inductance 1220 µH
Inductance 2220 µH
Rated Current900 mA
Saturation Current1.4 A
DC Resistance 10.53 Ω
DC Resistance 20.53 Ω
DC Resistance 10.65 Ω
DC Resistance 20.65 Ω
Self Resonant Frequency2 MHz
WE-TVS TVS Diode – Super Speed Series, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
SizeDFN1210-6L 
Operating Temperature -55 °C up to +85 °C
Length1.2 mm
Width1 mm
Height0.45 mm
Channels
PolarityUnidirectional 
Channel Operating Voltage [max.]3.3 V
Channel (Reverse) Leakage Current [max.]0.5 µA
(Reverse) Breakdown Voltage [min.]4.5 V
(Channel) Input Capacitance [typ.]0.18 pF
(Reverse) Peak Pulse Current3 A
Channel ESD Clamping Voltage [typ.]13 V
ESD Contact Discharge Capability8 kV