IC manufacturers Texas Instruments

IC manufacturers (103)

Texas Instruments TPS2373 | Demoboard PMP20878

Class 8 High Power PoE Isolated Active Clamp Forward Converter (24V/3A) Reference Design

Overview

TopologyForward Converter
Input voltage40-57 V
Output 124 V / 3 A
IC revisionA

Description

This reference design is a high power PoE Powered Device (PD) plus active clamp forward converter. The TPS2373 high power PD controller EVM (TPS2373-4EVM-758) provides all functions necessary to implement an IEEE802.3bt-ready PD. This is paired up with an active clamp forward converter utilizing the UCC2897A controller. The high efficiency 24V/3A output using synchronous rectifiers is ideally suited for high power PoE applications such as IP security cameras and LED lighting applications.

Features

Class 8 IEEE802.3bt-ready PoE PDAutomatic MPSAdvanced start-upSynchronous rectifiers for high efficiency (92% at 3A)1500VRMS isolationREMARK: Schematic and BOM is added

More information

Products

Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
λDom typ.(nm)
Emitting Color
λPeak typ.(nm)
IV typ.(mcd)
VF typ.(V)
Chip Technology
50% typ.(°)
C
Tol. C
Size
Q(%)
DF(%)
RISO
Ceramic Type
L(mm)
W(mm)
H(mm)
Fl(mm)
Packaging
IR(mA)
ISAT(A)
RDC(mΩ)
fres(MHz)
IRP,40K(A)
ISAT,10%(A)
ISAT,30%(A)
Material
Version
VIN
VOut1(V)
IOut1(A)
Vaux(V)
n
Z @ 100 MHz(Ω)
Zmax(Ω)
Test Condition Zmax
IR 2(mA)
RDC max.(Ω)
Type
Winding Style
Number of windings
L1(µH)
IR(mA)
RDC max.(Ω)
VR(V)
Data rate
Ports
PoE
Improved CMRR
Operating Temperature
VT(V (AC))
Mount
L(µH)
LSmin.(nH)
Samples
WL-SMCW SMT Mono-color Chip LED Waterclear, 590 nm, Yellow
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Dominant Wavelength [typ.]590 nm
Emitting ColorYellow 
Peak Wavelength [typ.]595 nm
Luminous Intensity [typ.]120 mcd
Forward Voltage [typ.]2 V
Chip TechnologyAlInGaP 
Viewing Angle Phi 0° [typ.]140 °
Size0603 
Length1.6 mm
Width0.8 mm
Height0.7 mm
PackagingTape and Reel 
Operating Temperature -40 °C up to +85 °C
MountSMT 
WE-CBF SMT EMI Suppression Ferrite Bead, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Size0603 
Length1.6 mm
Width0.8 mm
Height0.8 mm
Pad Dimension0.3 mm
Rated Current500 mA
VersionSMT 
Impedance @ 100 MHz60 Ω
Maximum Impedance110 Ω
Maximum Impedance650 MHz 
Rated Current 22000 mA
DC Resistance0.3 Ω
TypeHigh Speed 
Number of windings
Rated Current500 mA
DC Resistance [1]0.3 Ω
Operating Temperature -55 °C up to +125 °C
MountSMT 
WE-CBF SMT EMI Suppression Ferrite Bead, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Size0603 
Length1.6 mm
Width0.8 mm
Height0.8 mm
Pad Dimension0.3 mm
Rated Current1500 mA
VersionSMT 
Impedance @ 100 MHz300 Ω
Maximum Impedance450 Ω
Maximum Impedance250 MHz 
Rated Current 22000 mA
DC Resistance0.15 Ω
TypeHigh Current 
Number of windings
Rated Current2000 mA
DC Resistance [1]0.15 Ω
Operating Temperature -55 °C up to +125 °C
MountSMT 
WE-SL5 SMT Common Mode Line Filter, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Length10 mm
Width8.7 mm
Height6.5 mm
Rated Current2800 mA
VersionSMT 
Impedance @ 100 MHz800 Ω
Maximum Impedance1200 Ω
Maximum Impedance20 MHz 
DC Resistance0.035 Ω
Winding Stylesectional 
Number of windings
Inductance [1]250 µH
Rated Current2000 mA
DC Resistance [1]0.035 Ω
Rated Voltage80 V
Operating Temperature -40 °C up to +125 °C
Insulation Test Voltage1000 V (AC)
MountSMT 
Inductance250 µH
Leakage Inductance [min.]1500 nH
WE-HCI SMT Flat Wire High Current Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Size7050 
Length7 mm
Width6.9 mm
Height4.8 mm
DC Resistance14.5 mΩ
Self Resonant Frequency56 MHz
Performance Rated Current8.3 A
Saturation Current @ 10%2.2 A
Saturation Current @ 30%6.5 A
MaterialSuperflux 
VersionSMT 
DC Resistance0.01595 Ω
Number of windings11.5 
Operating Temperature -40 °C up to +150 °C
MountSMT 
Inductance4.9 µH
WE-HCI SMT Flat Wire High Current Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Size2212 
Length22.5 mm
Width22 mm
Height12 mm
DC Resistance13.2 mΩ
Self Resonant Frequency6.8 MHz
Performance Rated Current10.6 A
Saturation Current @ 10%12.5 A
Saturation Current @ 30%15 A
MaterialMnZn 
VersionSMT 
DC Resistance0.01452 Ω
Number of windings17.5 
Operating Temperature -40 °C up to +125 °C
MountSMT 
Inductance33 µH
WCAP-CSGP MLCCs 50 V(DC), –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance100 pF
Capacitance±5% 
Size0603 
Q-Factor1000 %
Insulation Resistance10 GΩ
Ceramic TypeNP0 Class I 
Length1.6 mm
Width0.8 mm
Height0.8 mm
Pad Dimension0.4 mm
Packaging7" Tape & Reel 
Rated Voltage50 V
Operating Temperature -55 °C up to +125 °C
WCAP-CSGP MLCCs 16 V(DC), –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance1 µF
Capacitance±10% 
Size0603 
Dissipation Factor10 %
Insulation Resistance0.1 GΩ
Ceramic TypeX7R Class II 
Length1.6 mm
Width0.8 mm
Height0.8 mm
Pad Dimension0.4 mm
Packaging7" Tape & Reel 
Rated Voltage16 V
Operating Temperature -55 °C up to +125 °C
WCAP-CSGP MLCCs 25 V(DC), –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance100 nF
Capacitance±10% 
Size0603 
Dissipation Factor3.5 %
Insulation Resistance5 GΩ
Ceramic TypeX7R Class II 
Length1.6 mm
Width0.8 mm
Height0.8 mm
Pad Dimension0.4 mm
Packaging7" Tape & Reel 
Rated Voltage25 V
Operating Temperature -55 °C up to +125 °C
WE-LQS SMT Power Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Size5040 
Length5 mm
Width5 mm
Height4 mm
Rated Current200 mA
Saturation Current0.24 A
DC Resistance6000 mΩ
Self Resonant Frequency1.9 MHz
Operating Temperature -40 °C up to +125 °C
MountSMT 
Inductance1000 µH
WE-LAN LAN Transformer, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Length17.55 mm
Width16 mm
Height98.8 mm
Pad Dimension13.97 mm
VersionSMT 
Turns Ratio1:1 
Type4PPoE (to 900 mA) 
Inductance [1]350 µH
Data rate10/100/1000BASE-T 
Ports
PoE4PPoE (up to 1000 mA) 
Improved Common Mode RejectionNo 
Operating Temperature -40 °C up to +105 °C
Insulation Test Voltage1500 V (AC)
MountSMT 
Inductance350 µH
WE-PoE++ Power over Ethernet Plus Plus Transformer, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
SizeER19/4.8/15 
Length21.08 mm
Width23.37 mm
Height10.5 mm
PackagingTape and Reel 
VersionForward 
Input Voltage 40 - 57 V (DC)
Output Voltage 124 V
Output Current 13 A
Auxiliary Voltage12 V
Turns Ratio4:4:4:4:4 
Operating Temperature -40 °C up to +125 °C
Insulation Test Voltage2250 V (AC)
MountSMT 
Inductance100 µH