IC manufacturers Texas Instruments

IC manufacturers (103)

Texas Instruments TPS2373

Overview

TopologyForward Converter
IC revisionA

Description

The TPS2373 contains all of the features needed to implement an IEEE802.3at or IEEE802.3bt (draft) (Type 1-4) powered device (PD). The low internal switch resistance allows the TPS2373-4 and TPS2373-3 to support high power applications up to 90 W and 60 W respectively. Assuming 100-meter CAT5 cable, this translates into 71.3 W and 51 W at PD input. The TPS2373 operates with enhanced features. The Advanced Startup function for DC-DC results in a simple, flexible, and minimal system cost solution, while ensuring that IEEE802.3bt (draft) startup requirements are met. It helps to reduce the size of the low voltage bias capacitor considerably. It also allows long DC-DC converter soft-start period and enables the use of a low-voltage PWM controller. The Automatic MPS function enables applications requiring very low power standby modes. The TPS2373 automatically generates the necessary pulsed current to maintain the PSE power. An external resistor is used to enable this functionality and to program the MPS pulsed current amplitude.

Features

  • IEEE 802.3bt (Draft) PD Solution for Type 3 or Type 4 PoE
  • Supports Power Levels for Type-4 ( TPS2373-4) 90-W and Type-3 ( TPS2373-3) 60-W Operation
  • Robust 100 V Hotswap MOSFET– TPS2373-4 (typ.): 0.1-Ω, 2.2-A Current Limit– TPS2373-3 (typ.): 0.3-Ω, 1.85-A Current Limit
  • Allocated Power Indicator Outputs
  • Advanced Startup for DC-DC– Simplifies Downstream DC-DC Design– Compliant to PSE Inrush
  • Automatic Maintain Power Signature (MPS)– Auto-adjust MPS for Type 1-2 or 3-4 PSE– Supports Ultra-Low Power Standby Modes
  • Primary Adapter Priority Input
  • Supports PoE++ PSE
  • -40°C to 125°C Junction Temperature Range
  • 20-lead VQFN Package

Typical applications

  • IEEE 802.3bt (Draft) Compliant Devices, 4PPOE, Pass-through System
  • Security Cameras, Multiband access points, Pico-base Stations, Video and VoIP Telephones, Systems using Redundant Power Feeds

Products

Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
λDom typ.(nm)
Emitting Color
λPeak typ.(nm)
IV typ.(mcd)
VF typ.(V)
Chip Technology
50% typ.(°)
C
Tol. C
Size
Q(%)
DF(%)
RISO
Ceramic Type
L(mm)
W(mm)
H(mm)
Fl(mm)
Packaging
IR(mA)
ISAT(A)
RDC(mΩ)
fres(MHz)
IRP,40K(A)
ISAT,10%(A)
ISAT,30%(A)
Material
Version
VIN
VOut1(V)
IOut1(A)
Vaux(V)
n
Z @ 100 MHz(Ω)
Zmax(Ω)
Test Condition Zmax
IR 2(mA)
RDC max.(Ω)
Type
Winding Style
Number of windings
L1(µH)
IR(mA)
RDC max.(Ω)
VR(V)
Data rate
Ports
PoE
Improved CMRR
Operating Temperature
VT(V (AC))
Mount
L(µH)
LSmin.(nH)
Samples
WL-SMCW SMT Mono-color Chip LED Waterclear, 590 nm, Yellow
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Dominant Wavelength [typ.]590 nm
Emitting ColorYellow 
Peak Wavelength [typ.]595 nm
Luminous Intensity [typ.]120 mcd
Forward Voltage [typ.]2 V
Chip TechnologyAlInGaP 
Viewing Angle Phi 0° [typ.]140 °
Size0603 
Length1.6 mm
Width0.8 mm
Height0.7 mm
PackagingTape and Reel 
Operating Temperature -40 °C up to +85 °C
MountSMT 
WE-CBF SMT EMI Suppression Ferrite Bead, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Size0603 
Length1.6 mm
Width0.8 mm
Height0.8 mm
Pad Dimension0.3 mm
Rated Current500 mA
VersionSMT 
Impedance @ 100 MHz60 Ω
Maximum Impedance110 Ω
Maximum Impedance650 MHz 
Rated Current 22000 mA
DC Resistance0.3 Ω
TypeHigh Speed 
Number of windings
Rated Current500 mA
DC Resistance [1]0.3 Ω
Operating Temperature -55 °C up to +125 °C
MountSMT 
WE-CBF SMT EMI Suppression Ferrite Bead, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Size0603 
Length1.6 mm
Width0.8 mm
Height0.8 mm
Pad Dimension0.3 mm
Rated Current1500 mA
VersionSMT 
Impedance @ 100 MHz300 Ω
Maximum Impedance450 Ω
Maximum Impedance250 MHz 
Rated Current 22000 mA
DC Resistance0.15 Ω
TypeHigh Current 
Number of windings
Rated Current2000 mA
DC Resistance [1]0.15 Ω
Operating Temperature -55 °C up to +125 °C
MountSMT 
WE-SL5 SMT Common Mode Line Filter, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Length10 mm
Width8.7 mm
Height6.5 mm
Rated Current2800 mA
VersionSMT 
Impedance @ 100 MHz800 Ω
Maximum Impedance1200 Ω
Maximum Impedance20 MHz 
DC Resistance0.035 Ω
Winding Stylesectional 
Number of windings
Inductance [1]250 µH
Rated Current2000 mA
DC Resistance [1]0.035 Ω
Rated Voltage80 V
Operating Temperature -40 °C up to +125 °C
Insulation Test Voltage1000 V (AC)
MountSMT 
Inductance250 µH
Leakage Inductance [min.]1500 nH
WE-HCI SMT Flat Wire High Current Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Size7050 
Length7 mm
Width6.9 mm
Height4.8 mm
DC Resistance14.5 mΩ
Self Resonant Frequency56 MHz
Performance Rated Current8.3 A
Saturation Current @ 10%2.2 A
Saturation Current @ 30%6.5 A
MaterialSuperflux 
VersionSMT 
DC Resistance0.01595 Ω
Number of windings11.5 
Operating Temperature -40 °C up to +150 °C
MountSMT 
Inductance4.9 µH
WE-HCI SMT Flat Wire High Current Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Size2212 
Length22.5 mm
Width22 mm
Height12 mm
DC Resistance4.3 mΩ
Self Resonant Frequency13 MHz
Performance Rated Current20.1 A
Saturation Current @ 10%5 A
Saturation Current @ 30%25 A
MaterialMnZn 
VersionSMT 
DC Resistance0.00473 Ω
Number of windings10.5 
Operating Temperature -40 °C up to +125 °C
MountSMT 
Inductance12 µH
WCAP-CSGP MLCCs 50 V(DC), –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance100 pF
Capacitance±5% 
Size0603 
Q-Factor1000 %
Insulation Resistance10 GΩ
Ceramic TypeNP0 Class I 
Length1.6 mm
Width0.8 mm
Height0.8 mm
Pad Dimension0.4 mm
Packaging7" Tape & Reel 
Rated Voltage50 V
Operating Temperature -55 °C up to +125 °C
WCAP-CSGP MLCCs 16 V(DC), –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance1 µF
Capacitance±10% 
Size0603 
Dissipation Factor10 %
Insulation Resistance0.1 GΩ
Ceramic TypeX7R Class II 
Length1.6 mm
Width0.8 mm
Height0.8 mm
Pad Dimension0.4 mm
Packaging7" Tape & Reel 
Rated Voltage16 V
Operating Temperature -55 °C up to +125 °C
WCAP-CSGP MLCCs 25 V(DC), –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance100 nF
Capacitance±10% 
Size0603 
Dissipation Factor3.5 %
Insulation Resistance5 GΩ
Ceramic TypeX7R Class II 
Length1.6 mm
Width0.8 mm
Height0.8 mm
Pad Dimension0.4 mm
Packaging7" Tape & Reel 
Rated Voltage25 V
Operating Temperature -55 °C up to +125 °C
WCAP-CSGP MLCCs 50 V(DC), –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance1 nF
Capacitance±10% 
Size0603 
Dissipation Factor2.5 %
Insulation Resistance10 GΩ
Ceramic TypeX7R Class II 
Length1.6 mm
Width0.8 mm
Height0.8 mm
Pad Dimension0.4 mm
Packaging7" Tape & Reel 
Rated Voltage50 V
Operating Temperature -55 °C up to +125 °C
WCAP-CSGP MLCCs 50 V(DC), –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance10 nF
Capacitance±10% 
Size0603 
Dissipation Factor2.5 %
Insulation Resistance10 GΩ
Ceramic TypeX7R Class II 
Length1.6 mm
Width0.8 mm
Height0.8 mm
Pad Dimension0.4 mm
Packaging7" Tape & Reel 
Rated Voltage50 V
Operating Temperature -55 °C up to +125 °C
WE-LQS SMT Power Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Size5040 
Length5 mm
Width5 mm
Height4 mm
Rated Current200 mA
Saturation Current0.24 A
DC Resistance6000 mΩ
Self Resonant Frequency1.9 MHz
Operating Temperature -40 °C up to +125 °C
MountSMT 
Inductance1000 µH
WE-LAN LAN Transformer, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Length17.55 mm
Width16 mm
Height98.8 mm
Pad Dimension13.97 mm
VersionSMT 
Turns Ratio1:1 
Type4PPoE (to 900 mA) 
Inductance [1]350 µH
Data rate10/100/1000BASE-T 
Ports
PoE4PPoE (up to 1000 mA) 
Improved Common Mode RejectionNo 
Operating Temperature -40 °C up to +105 °C
Insulation Test Voltage1500 V (AC)
MountSMT 
Inductance350 µH
WCAP-CSGP MLCCs 100 V(DC), –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance10 nF
Capacitance±10% 
Size0603 
Dissipation Factor2.5 %
Insulation Resistance10 GΩ
Ceramic TypeX7R Class II 
Length1.6 mm
Width0.8 mm
Height0.8 mm
Pad Dimension0.4 mm
Packaging7" Tape & Reel 
Rated Voltage100 V
Operating Temperature -55 °C up to +125 °C
WE-PoE++ Power over Ethernet Plus Plus Transformer, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
SizeER19/4.8/15 
Length21.08 mm
Width23.37 mm
Height10.5 mm
VersionForward 
Input Voltage 37 - 57 V (DC)
Output Voltage 112 V
Output Current 16 A
Auxiliary Voltage12 V
Turns Ratio4:4:2:2:4 
Operating Temperature -40 °C up to +125 °C
Insulation Test Voltage2250 V (AC)
MountSMT 
Inductance153 µH