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Texas Instruments LMG3522R030 | Demoboard PMP41078
High-voltage to low-voltage DC-DC converter reference design with GaN HEMT
Overview
| Topology | Half-Bridge Converter symmetrical isolated |
| Input voltage | 200-450 V |
| Output 1 | 16 V / 250 A |
| IC revision | 1 |
Description
This reference design describes a 3.5kW highvoltage to low-voltage DC-DC converter with 650V Gallium nitride (GaN) high-electron mobility transistors (HEMT). Using LMG3522R030 as primary switches makes the converter work at a high switching frequency. In this design, the converter uses a smaller size transformer. To ease the thermal performance of active clamping metal-oxide semiconductor fieldeffect transistors (MOSFETs), the converter uses twochannel active clamping circuits.
Features
- GaN based phase-shifted full-bridge (PSFB) using LMG3522 and controlled using C29 microcontroller unit (MCU)
- 200kHz switching frequency, magnetic size is 35% less than 100kHz
- 95.48% at 200kHz, 400V Vin, 13.5V Vout, about 1kW
- Dual active clamping circuits for high-frequency scenario and low synchronous rectifier (SR) MOSFET voltage stress
- Light load efficiency optimization promotes maximum 5% efficiency
Typical applications
- Automotive DCDC converter
More information
Products
Order Code | Datasheet | Simulation | Downloads | Status | Product series | L(µH) | VT(V (AC)) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | RDC typ.(mΩ) | RDC max.(mΩ) | Mount | VIN | VOut1(V (DC)) | IOut1(mA) | Type of Insulation | fswitch(kHz) | ∫Udt(Vµs) | NPRI : NSEC | L(mm) | W(mm) | H(mm) | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCI SMT Flat Wire High Current Inductor, 2.2 µH, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-HCI SMT Flat Wire High Current Inductor | Inductance2.2 µH | – | Performance Rated Current9.2 A | Saturation Current @ 10%3.5 A | Saturation Current @ 30%7.5 A | DC Resistance11.3 mΩ | Self Resonant Frequency108 MHz | MaterialSuperflux | – | DC Resistance12.43 mΩ | MountSMT | – | – | – | – | – | – | – | Length5.5 mm | Width5.3 mm | Height4 mm | ||||
 | WE-XHMI SMT Power Inductor, 4.7 µH, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-XHMI SMT Power Inductor | Inductance4.7 µH | – | Performance Rated Current9.6 A | Saturation Current @ 10%6.5 A | Saturation Current @ 30%13 A | DC Resistance13 mΩ | Self Resonant Frequency28 MHz | – | DC Resistance13 mΩ | DC Resistance14.3 mΩ | MountSMT | – | – | – | – | – | – | – | Length6.65 mm | Width6.45 mm | Height6.1 mm | ||||
 | WE-PPTI Push-Pull Transformers, 100 µH, 2500 V (AC) | Simulation– | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-PPTI Push-Pull Transformers | Inductance100 µH | Insulation Test Voltage2500 V (AC) | – | – | – | – | – | – | – | – | MountSMT | Input Voltage 12 V (DC) | Output Voltage 112 V (DC) | Output Current 1500 mA | Type of InsulationFunctional | Switching Frequency 400 - 600 | Voltage-µSecond18 Vµs | Turns Ratio1:1.14 | Length8.5 mm | Width13.12 mm | Height5.5 mm | |||
 | WE-PPTI Push-Pull Transformers, 475 µH, 2500 V (AC) | Simulation– | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-PPTI Push-Pull Transformers | Inductance475 µH | Insulation Test Voltage2500 V (AC) | – | – | – | – | – | – | – | – | MountSMT | Input Voltage 5 V (DC) | Output Voltage 15 V (DC) | Output Current 1600 mA | Type of InsulationFunctional | Switching Frequency 300 - 620 | Voltage-µSecond11 Vµs | Turns Ratio1:1.3 | Length6.73 mm | Width10.2 mm | Height4.19 mm |