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Texas Instruments LMG3522R030 | Demoboard PMP41078
High-voltage to low-voltage DC-DC converter reference design with GaN HEMT
Details
| Topologie | Gegentaktwandler (Halbbrücken) |
| Eingangsspannung | 200-450 V |
| Ausgang 1 | 16 V / 250 A |
| IC-Revision | 1 |
Beschreibung
This reference design describes a 3.5kW highvoltage to low-voltage DC-DC converter with 650V Gallium nitride (GaN) high-electron mobility transistors (HEMT). Using LMG3522R030 as primary switches makes the converter work at a high switching frequency. In this design, the converter uses a smaller size transformer. To ease the thermal performance of active clamping metal-oxide semiconductor fieldeffect transistors (MOSFETs), the converter uses twochannel active clamping circuits.
Eigenschaften
- GaN based phase-shifted full-bridge (PSFB) using LMG3522 and controlled using C29 microcontroller unit (MCU)
- 200kHz switching frequency, magnetic size is 35% less than 100kHz
- 95.48% at 200kHz, 400V Vin, 13.5V Vout, about 1kW
- Dual active clamping circuits for high-frequency scenario and low synchronous rectifier (SR) MOSFET voltage stress
- Light load efficiency optimization promotes maximum 5% efficiency
Typische Anwendungen
- Automotive DCDC converter
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | VT(V (AC)) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | RDC typ.(mΩ) | RDC max.(mΩ) | Montageart | Vin | VOut1(V (DC)) | IOut1(mA) | Isolierungstyp | fswitch(kHz) | ∫Udt(Vµs) | NPRI : NSEC | L(mm) | B(mm) | H(mm) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCI SMT-Hochstrominduktivität, 2.2 µH, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität2.2 µH | – | Performance Nennstrom9.2 A | Sättigungsstrom 13.5 A | Sättigungsstrom @ 30%7.5 A | Gleichstromwiderstand11.3 mΩ | Eigenresonanzfrequenz108 MHz | MaterialSuperflux | – | Gleichstromwiderstand12.43 mΩ | MontageartSMT | – | – | – | – | – | – | – | Länge5.5 mm | Breite5.3 mm | Höhe4 mm | ||||
 | WE-XHMI SMT Speicherdrossel, 4.7 µH, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-XHMI SMT Speicherdrossel | Induktivität4.7 µH | – | Performance Nennstrom9.6 A | Sättigungsstrom 16.5 A | Sättigungsstrom @ 30%13 A | Gleichstromwiderstand13 mΩ | Eigenresonanzfrequenz28 MHz | – | Gleichstromwiderstand13 mΩ | Gleichstromwiderstand14.3 mΩ | MontageartSMT | – | – | – | – | – | – | – | Länge6.65 mm | Breite6.45 mm | Höhe6.1 mm | ||||
 | WE-PPTI Push-Pull Transformers, 100 µH, 2500 V (AC) | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PPTI Push-Pull Transformers | Induktivität100 µH | Prüfspannung2500 V (AC) | – | – | – | – | – | – | – | – | MontageartSMT | Input Voltage 12 V (DC) | Ausgangsspannung 112 V (DC) | Ausgangsstrom 1500 mA | IsolierungstypFunktional | Switching Frequency 400 - 600 | Spannung-µSekunde18 Vµs | Übersetzungsverhältnis1:1.14 | Länge8.5 mm | Breite13.12 mm | Höhe5.5 mm | |||
 | WE-PPTI Push-Pull Transformers, 475 µH, 2500 V (AC) | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PPTI Push-Pull Transformers | Induktivität475 µH | Prüfspannung2500 V (AC) | – | – | – | – | – | – | – | – | MontageartSMT | Input Voltage 5 V (DC) | Ausgangsspannung 15 V (DC) | Ausgangsstrom 1600 mA | IsolierungstypFunktional | Switching Frequency 300 - 620 | Spannung-µSekunde11 Vµs | Übersetzungsverhältnis1:1.3 | Länge6.73 mm | Breite10.2 mm | Höhe4.19 mm |