| Topology | Buck Converter |
| Input voltage | 2.7-5.5 V |
| Output 1 | 3.3 V / 1.5 A |
| Output 2 | 1 V / 1.5 A |
| Output 3 | 1.8 V / 1.5 A |
| Output 4 | 1.2 V / 1.5 A |
| IC revision | 1 |
The MCP164GX1000 is a custom-designed Power Management Integrated Circuit (PMIC) specifically developedas a high-performance, small-footprint power companion for the Microchip 64-bit RISC-V® Quad-CoreMicroprocessor PIC64GX1000.Making use of the on-board embedded EEPROM for default power-up configuration, the device ispreprogrammed with the necessary configuration required by the PIC64GX1000. It is available in two memoryarchitecture options: DDR4 (MCP164GX1000AB) and LPDDR4 (MCP164GX1000AA).These options alleviate the production effort, simplifying the integration task of the PMIC into the design. TheMCP164GX1000 also offers flexibility, allowing users to reprogram the IC, in-field or in-circuit, with any desiredconfiguration using the integrated I2C bus, which supports clock rates up to 3.4 MHz. As a safety mechanism,the integrated EEPROM has protection against accidental write operations.The MCP164GX1000 supports commercial and industrial applications.The MCP164GX1000 integrates 13 power channels distributed as eight parallelable 1.5A Buck regulators, four300 mA LDOs, and one low-input/low-output voltage LDO Controller using an external MOSFET.The eight 1.5A Buck regulators can be operated either independently or in parallel to support higher currents,in groups of up to four. The paralleling technique relies on the matching of the power switches’ resistances anddoes not require the complication of an additional current-sharing loop. Part count and solution footprint arealso reduced since all paralleled channels share the same inductor, while the required magnetic volume is thesame as equivalent multi-phase architectures.
Order Code | Datasheet | Simulation | Downloads | Status | Product series | C | Tol. C | VR(V (DC)) | Size | Operating Temperature | DF(%) | RISO | Ceramic Type | L(mm) | W(mm) | H(mm) | Fl(mm) | Packaging | L(µH) | IR(A) | ISAT1(A) | ISAT2(A) | RDC max.(mΩ) | fres(MHz) | IRP,40K(A) | ISAT,30%(A) | RDC typ.(mΩ) | VOP(V) | Mount | ISAT,10%(A) | Samples | |
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| WCAP-CSGP MLCCs 25 V(DC), 1 µF, ±10% | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWCAP-CSGP MLCCs 25 V(DC) | Capacitance1 µF | Capacitance±10% | Rated Voltage25 V (DC) | Size0603 | Operating Temperature -55 °C up to +125 °C | Dissipation Factor10 % | Insulation Resistance0.5 GΩ | Ceramic TypeX7R Class II | Length1.6 mm | Width0.8 mm | Height0.8 mm | Pad Dimension0.4 mm | Packaging7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | – | |||||
| WCAP-CSGP MLCCs 10 V(DC), 4.7 µF, ±20% | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWCAP-CSGP MLCCs 10 V(DC) | Capacitance4.7 µF | Capacitance±20% | Rated Voltage10 V (DC) | Size0603 | Operating Temperature -55 °C up to +85 °C | Dissipation Factor10 % | Insulation Resistance0.02 GΩ | Ceramic TypeX5R Class II | Length1.6 mm | Width0.8 mm | Height0.8 mm | Pad Dimension0.4 mm | Packaging7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | – | |||||
| WCAP-CSGP MLCCs 10 V(DC), 22 µF, ±20% | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWCAP-CSGP MLCCs 10 V(DC) | Capacitance22 µF | Capacitance±20% | Rated Voltage10 V (DC) | Size0805 | Operating Temperature -55 °C up to +85 °C | Dissipation Factor10 % | Insulation Resistance0.005 GΩ | Ceramic TypeX5R Class II | Length2 mm | Width1.25 mm | Height1.25 mm | Pad Dimension0.5 mm | Packaging7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | – | |||||
| WCAP-CSGP MLCCs 6.3 V(DC), 47 µF, ±20% | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWCAP-CSGP MLCCs 6.3 V(DC) | Capacitance47 µF | Capacitance±20% | Rated Voltage6.3 V (DC) | Size1210 | Operating Temperature -55 °C up to +85 °C | Dissipation Factor10 % | Insulation Resistance0.002 GΩ | Ceramic TypeX5R Class II | Length3.2 mm | Width2.5 mm | Height2.5 mm | Pad Dimension0.75 mm | Packaging7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | – | |||||
| WCAP-CSGP MLCCs 6.3 V(DC), 100 µF, ±20% | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWCAP-CSGP MLCCs 6.3 V(DC) | Capacitance100 µF | Capacitance±20% | Rated Voltage6.3 V (DC) | Size1206 | Operating Temperature -55 °C up to +85 °C | Dissipation Factor10 % | Insulation Resistance0.001 GΩ | Ceramic TypeX5R Class II | Length3.2 mm | Width1.6 mm | Height1.6 mm | Pad Dimension0.5 mm | Packaging7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | – | |||||
![]() | WE-LHMI SMT Power Inductor, –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-LHMI SMT Power Inductor | – | – | – | Size4020 | Operating Temperature -40 °C up to +125 °C | – | – | – | Length4.45 mm | Width4.06 mm | Height1.8 mm | – | – | Inductance1 µH | – | – | – | DC Resistance27 mΩ | Self Resonant Frequency89 MHz | Performance Rated Current6.2 A | Saturation Current @ 30%12.5 A | DC Resistance22 mΩ | Operating Voltage120 V | MountSMT | Saturation Current @ 10%6.5 A | ||||
![]() | WE-PMCI Power Molded Chip Inductor, –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-PMCI Power Molded Chip Inductor | – | – | – | Size252012 | Operating Temperature -40 °C up to +125 °C | – | – | – | Length2.5 mm | Width2 mm | Height1.2 mm | Pad Dimension0.6 mm | – | Inductance1.5 µH | Rated Current3.2 A | Saturation Current 11.35 A | Saturation Current 23.05 A | DC Resistance77 mΩ | Self Resonant Frequency70 MHz | Performance Rated Current3.2 A | Saturation Current @ 30%3.05 A | DC Resistance71 mΩ | – | MountSMT | Saturation Current @ 10%1.35 A | ||||
![]() | WE-MAPI SMT Power Inductor, –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MAPI SMT Power Inductor | – | – | – | Size4020HT | Operating Temperature -55 °C up to +150 °C | – | – | – | Length4 mm | Width4 mm | Height2 mm | – | – | Inductance0.68 µH | Rated Current8.1 A | – | – | DC Resistance9.2 mΩ | Self Resonant Frequency67 MHz | Performance Rated Current11.7 A | Saturation Current @ 30%11.7 A | DC Resistance8 mΩ | Operating Voltage80 V | MountSMT | Saturation Current @ 10%5.45 A | ||||
![]() | WE-XHMI SMT Power Inductor, –, – | Status Newi| Product is new in our portfolio and production is active. Expected lifetime: >10 years. | Product seriesWE-XHMI SMT Power Inductor | – | – | – | Size4020 | Operating Temperature -40 °C up to +125 °C | – | – | – | Length4.3 mm | Width4.3 mm | Height2 mm | – | – | Inductance0.47 µH | – | – | – | DC Resistance6.69 mΩ | Self Resonant Frequency95 MHz | Performance Rated Current14.5 A | Saturation Current @ 30%12.8 A | DC Resistance5.25 mΩ | – | MountSMT | Saturation Current @ 10%5.6 A |