IC manufacturers Analog Devices

IC manufacturers (103)

Analog Devices LT8672HMS | Demoboard DBB Board

Active Rectifier Controller with Reverse Protection

Overview

TopologyOther Topology
Switching frequency50-100 kHz
IC revision1.0

Description

The LT®8672 is an active rectifier controller for reverse input protection. It drives an external N-channel MOSFET to replace a power Schottky diode. Its very low quiescent current and fast transient response meet the tough requirements in automotive applications where AC input signals of up to 100kHz are present. These signals are rectified with minimum power dissipation on the external FET, simplifying thermal management on the PCB. With a drop of only 20mV, the LT8672 solution eases the minimum input voltage requirement during cold crank and start-stop, allowing simpler and more efficient circuits. If the input power source fails or is shorted, a fast turn-off minimizes reverse current transients. An available shutdown mode reduces the quiescent current to 3.5μA. An integrated auxiliary boost regulator provides the required boost voltage to turn the external FET fully on. A power good pin signals when the external FET is ready to take load current.

Features

  • AEC-Q100 Qualified for Automotive Applications
  • Reverse Input Protection to –40V
  • Improved Performance Compared to a Schottky Diode
  • Reduce Power Dissipation by >90%
  • Reduce Drop to 20mV n Ultrafast Transient Response
  • Rectifies 6VP-P Up to 50kHz n Rectifies 2VP-P Up to 100kHz - Wide Operating Voltage Range: 3V to 42V
  • Low 20µA Quiescent Current in Operation
  • Low 3.5µA Shutdown Current n Accurate 1.21V Enable Pin Threshold n Small 10-Lead MSOP Package, 10-Lead 3mm × 2mm DFN Package and 3mm × 2mm Side-Wettable DFN Package

Typical applications

  • Automotive Battery Protection
  • Portable Instrumentation
  • Industrial Supplies

Products

Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
λDom typ.(nm)
Emitting Color
λPeak typ.(nm)
IV typ.(mcd)
VF typ.(V)
Chip Technology
50% typ.(°)
L(µH)
IRP,40K(A)
ISAT,30%(A)
RDC typ.(mΩ)
fres(MHz)
VOP(V)
Mount
ISAT(A)
Z @ 100 MHz(Ω)
Zmax(Ω)
Test Condition Zmax
IR 2(mA)
RDC max.(Ω)
Type
IR(mA)
Z @ 1 GHz(Ω)
H(mm)
Samples
WL-SMCW SMT Mono-color Chip LED Waterclear, 525 nm, Green
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Dominant Wavelength [typ.]525 nm
Emitting ColorGreen 
Peak Wavelength [typ.]515 nm
Luminous Intensity [typ.]430 mcd
Forward Voltage [typ.]3.2 V
Chip TechnologyInGaN 
Viewing Angle Phi 0° [typ.]140 °
MountSMT 
Height0.7 mm
WL-SMCW SMT Mono-color Chip LED Waterclear, 590 nm, Yellow
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Dominant Wavelength [typ.]590 nm
Emitting ColorYellow 
Peak Wavelength [typ.]595 nm
Luminous Intensity [typ.]120 mcd
Forward Voltage [typ.]2 V
Chip TechnologyAlInGaP 
Viewing Angle Phi 0° [typ.]140 °
MountSMT 
Height0.7 mm
WE-CBF SMT EMI Suppression Ferrite Bead, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
MountSMT 
Impedance @ 100 MHz15 Ω
Maximum Impedance60 Ω
Maximum Impedance1000 MHz 
Rated Current 21900 mA
DC Resistance0.1 Ω
TypeHigh Speed 
Rated Current500 mA
Impedance @ 1 GHz56 Ω
Height0.8 mm
WE-CBF SMT EMI Suppression Ferrite Bead, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
MountSMT 
Impedance @ 100 MHz600 Ω
Maximum Impedance700 Ω
Maximum Impedance150 MHz 
Rated Current 22000 mA
DC Resistance0.15 Ω
TypeHigh Current 
Rated Current1500 mA
Impedance @ 1 GHz193 Ω
Height0.0009 mm
WE-CBF SMT EMI Suppression Ferrite Bead, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
MountSMT 
Impedance @ 100 MHz600 Ω
Maximum Impedance650 Ω
Maximum Impedance80 MHz 
Rated Current 22500 mA
DC Resistance0.07 Ω
TypeHigh Current 
Rated Current1500 mA
Impedance @ 1 GHz79 Ω
Height1.1 mm
WE-MPSB EMI Multilayer Power Suppression Bead, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
DC Resistance1 mΩ
MountSMT 
Impedance @ 100 MHz10 Ω
Maximum Impedance41 Ω
Maximum Impedance2178 MHz 
Rated Current 210500 mA
DC Resistance0.003 Ω
TypeHigh Current 
Rated Current10500 mA
Impedance @ 1 GHz28 Ω
Height1.1 mm
WE-MPSB EMI Multilayer Power Suppression Bead, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
DC Resistance2.5 mΩ
MountSMT 
Impedance @ 100 MHz56 Ω
Maximum Impedance90 Ω
Maximum Impedance1000 MHz 
Rated Current 210000 mA
DC Resistance0.004 Ω
TypeHigh Current 
Rated Current10000 mA
Impedance @ 1 GHz90 Ω
Height2.28 mm
WE-TPC SMT Tiny Power Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance2.2 µH
DC Resistance125 mΩ
Self Resonant Frequency100 MHz
MountSMT 
Saturation Current1 A
DC Resistance0.155 Ω
Rated Current1300 mA
Height1.1 mm
WE-MAPI SMT Power Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance0.33 µH
Performance Rated Current8.7 A
Saturation Current @ 30%10.5 A
DC Resistance14 mΩ
Self Resonant Frequency140 MHz
Operating Voltage80 V
MountSMT 
Saturation Current8.3 A
DC Resistance0.017 Ω
Rated Current5500 mA
Height2 mm
WE-CBF SMT EMI Suppression Ferrite Bead, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Impedance @ 100 MHz48 Ω
Maximum Impedance90 Ω
Maximum Impedance600 MHz 
Rated Current 26000 mA
DC Resistance0.005 Ω
TypeHigh Current 
Rated Current4000 mA
Height1.1 mm