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Details
| Topologie | Sonstige Topologie |
| Schaltfrequenz | 50-100 kHz |
| IC-Revision | 1.0 |
Beschreibung
The LT®8672 is an active rectifier controller for reverse input protection. It drives an external N-channel MOSFET to replace a power Schottky diode. Its very low quiescent current and fast transient response meet the tough requirements in automotive applications where AC input signals of up to 100kHz are present. These signals are rectified with minimum power dissipation on the external FET, simplifying thermal management on the PCB. With a drop of only 20mV, the LT8672 solution eases the minimum input voltage requirement during cold crank and start-stop, allowing simpler and more efficient circuits. If the input power source fails or is shorted, a fast turn-off minimizes reverse current transients. An available shutdown mode reduces the quiescent current to 3.5μA. An integrated auxiliary boost regulator provides the required boost voltage to turn the external FET fully on. A power good pin signals when the external FET is ready to take load current.
Eigenschaften
- AEC-Q100 Qualified for Automotive Applications
- Reverse Input Protection to –40V
- Improved Performance Compared to a Schottky Diode
- Reduce Power Dissipation by >90%
- Reduce Drop to 20mV n Ultrafast Transient Response
- Rectifies 6VP-P Up to 50kHz n Rectifies 2VP-P Up to 100kHz - Wide Operating Voltage Range: 3V to 42V
- Low 20µA Quiescent Current in Operation
- Low 3.5µA Shutdown Current n Accurate 1.21V Enable Pin Threshold n Small 10-Lead MSOP Package, 10-Lead 3mm × 2mm DFN Package and 3mm × 2mm Side-Wettable DFN Package
Typische Anwendungen
- Automotive Battery Protection
- Portable Instrumentation
- Industrial Supplies
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | λDom typ.(nm) | Emittierte Farbe | λPeak typ.(nm) | IV typ.(mcd) | VF typ.(V) | Chiptechnologie | 2θ50% typ.(°) | L(µH) | IRP,40K(A) | ISAT,30%(A) | RDC typ.(mΩ) | fres(MHz) | VOP(V) | Montageart | ISAT(A) | Z @ 100 MHz(Ω) | Zmax(Ω) | Testbedingung Zmax | IR 2(mA) | RDC max.(Ω) | Typ | IR(mA) | Z @ 1 GHz(Ω) | H(mm) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WL-SMCW SMT Mono-color Chip LED Waterclear, 525 nm, Grün | Downloads27 Dateien Strahldaten
| Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWL-SMCW SMT Mono-color Chip LED Waterclear | dominante Wellenlänge [typ.]525 nm | Emittierte FarbeGrün | Spitzen-Wellenlänge [typ.]515 nm | Lichtstärke [typ.]430 mcd | Durchlassspannung [typ.]3.2 V | ChiptechnologieInGaN | Abstrahlwinkel Phi 0° [typ.]140 ° | – | – | – | – | – | – | MontageartSMT | – | – | – | – | – | – | – | – | – | Höhe0.7 mm | |||
| WL-SMCW SMT Mono-color Chip LED Waterclear, 590 nm, Gelb | Downloads27 Dateien Strahldaten
| Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWL-SMCW SMT Mono-color Chip LED Waterclear | dominante Wellenlänge [typ.]590 nm | Emittierte FarbeGelb | Spitzen-Wellenlänge [typ.]595 nm | Lichtstärke [typ.]120 mcd | Durchlassspannung [typ.]2 V | ChiptechnologieAlInGaP | Abstrahlwinkel Phi 0° [typ.]140 ° | – | – | – | – | – | – | MontageartSMT | – | – | – | – | – | – | – | – | – | Höhe0.7 mm | |||
 | WE-CBF SMT-Ferrit, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-CBF SMT-Ferrit | – | – | – | – | – | – | – | – | – | – | – | – | – | MontageartSMT | – | Impedanz @ 100 MHz15 Ω | Maximale Impedanz60 Ω | Maximale Impedanz1000 MHz | Nennstrom 21900 mA | Gleichstromwiderstand0.1 Ω | TypHochgeschwindigkeit | Nennstrom500 mA | Impedanz @ 1 GHz56 Ω | Höhe0.8 mm | ||||
 | WE-CBF SMT-Ferrit, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-CBF SMT-Ferrit | – | – | – | – | – | – | – | – | – | – | – | – | – | MontageartSMT | – | Impedanz @ 100 MHz600 Ω | Maximale Impedanz700 Ω | Maximale Impedanz150 MHz | Nennstrom 22000 mA | Gleichstromwiderstand0.15 Ω | TypHochstrom | Nennstrom1500 mA | Impedanz @ 1 GHz193 Ω | Höhe0.0009 mm | ||||
 | WE-CBF SMT-Ferrit, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-CBF SMT-Ferrit | – | – | – | – | – | – | – | – | – | – | – | – | – | MontageartSMT | – | Impedanz @ 100 MHz600 Ω | Maximale Impedanz650 Ω | Maximale Impedanz80 MHz | Nennstrom 22500 mA | Gleichstromwiderstand0.07 Ω | TypHochstrom | Nennstrom1500 mA | Impedanz @ 1 GHz79 Ω | Höhe1.1 mm | ||||
 | WE-MPSB EMI Multilayer Power Suppression Bead, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MPSB EMI Multilayer Power Suppression Bead | – | – | – | – | – | – | – | – | – | – | Gleichstromwiderstand1 mΩ | – | – | MontageartSMT | – | Impedanz @ 100 MHz10 Ω | Maximale Impedanz41 Ω | Maximale Impedanz2178 MHz | Nennstrom 210500 mA | Gleichstromwiderstand0.003 Ω | TypHochstrom | Nennstrom10500 mA | Impedanz @ 1 GHz28 Ω | Höhe1.1 mm | ||||
| WE-MPSB EMI Multilayer Power Suppression Bead, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MPSB EMI Multilayer Power Suppression Bead | – | – | – | – | – | – | – | – | – | – | Gleichstromwiderstand2.5 mΩ | – | – | MontageartSMT | – | Impedanz @ 100 MHz56 Ω | Maximale Impedanz90 Ω | Maximale Impedanz1000 MHz | Nennstrom 210000 mA | Gleichstromwiderstand0.004 Ω | TypHochstrom | Nennstrom10000 mA | Impedanz @ 1 GHz90 Ω | Höhe2.28 mm | ||||
 | WE-TPC SMT-Speicherdrossel, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-TPC SMT-Speicherdrossel | – | – | – | – | – | – | – | Induktivität2.2 µH | – | – | Gleichstromwiderstand125 mΩ | Eigenresonanzfrequenz100 MHz | – | MontageartSMT | Sättigungsstrom1 A | – | – | – | – | Gleichstromwiderstand0.155 Ω | – | Nennstrom1300 mA | – | Höhe1.1 mm | ||||
 | WE-MAPI SMT-Speicherdrossel, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MAPI SMT-Speicherdrossel | – | – | – | – | – | – | – | Induktivität0.33 µH | Performance Nennstrom8.7 A | Sättigungsstrom @ 30%10.5 A | Gleichstromwiderstand14 mΩ | Eigenresonanzfrequenz140 MHz | Betriebsspannung80 V | MontageartSMT | Sättigungsstrom8.3 A | – | – | – | – | Gleichstromwiderstand0.017 Ω | – | Nennstrom5500 mA | – | Höhe2 mm | ||||
| WE-CBF SMT-Ferrit, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-CBF SMT-Ferrit | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | Impedanz @ 100 MHz48 Ω | Maximale Impedanz90 Ω | Maximale Impedanz600 MHz | Nennstrom 26000 mA | Gleichstromwiderstand0.005 Ω | TypHochstrom | Nennstrom4000 mA | – | Höhe1.1 mm |