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Analog Devices LT8418 | Demoboard EVAL-LT8418-BZ

100V Half-Bridge GaN Driver with Smart Integrated Bootstrap Switch

Overview

TopologyHalf-Bridge Converter symmetrical isolated
Input voltage80 V
Switching frequency100-10000 kHz
Output 180 V / 10 A

Description

The EVAL-LT8418-BZ evaluation circuit features the LT8418 driving two 100V enhanced Gallium Nitride (eGaN) FETs in a half-bridge configuration. The circuit is optimized as a buck converter, but it can be used as a boost converter or other converter topologies consisting of a half-bridge. The evaluation circuit can deliver up to 10A with good thermal management.An external single or two PWM signals are required to drive the board, depending on the configuration. In the single-input setup, the dead time circuitry on the board is utilized to generate the complement signal and set the dead time. The dead time circuitry is bypassed in the dual-input setup. The LT8418 driver has powerful 0.2Ω pull-down and 0.6Ω pull-up drivers driving two 100V GaN FETs. It also integrates a smart integrated bootstrap switch to generate a balanced bootstrap voltage from VCC with a minimum dropout voltage. The LT8418 provides split gate drivers to adjust the turn-on and turn-off slew rates of GaN FETs to suppress ringing and optimize EMI performance.

Features

  • Half-Bridge Gate Driver for GaN FETs
  • 0.6Ω Pull-Up Resistance at Top Gate Driver
  • 0.2Ω Pull-Down Resistance at Bottom Gate Driver
  • 4A Peak Source, 8A Peak Sink Current Capability
  • Smart Integrated Bootstrap Switch
  • Split-Gate-Driver to Adjust Turn-On/Turn-Off Strength
  • Default Low-State for All Driver Inputs and Outputs
  • Maximum 15V Voltage Rating at INT and INB Inputs
  • Independent INT, INB Inputs with TTL Logic Compatible
  • Fast Propagation Delay: 10ns (Typical)
  • Propagation Delay Matching: 1.5ns (Typical)
  • Balanced Driver Supply Voltage: VBST ≈ VCC = 3.85V – 5.5V
  • Undervoltage and Overvoltage Lockout Protections
  • Small 12-Ball WLCSP Package

Typical applications

  • Automotive
  • Consumer
  • Data Center Power Supplies
  • Industrial

Products

Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
C
Tol. C
VR(V (DC))
Size
DF(%)
RISO
Ceramic Type
W(mm)
Fl(mm)
Packaging
L(µH)
IRP,40K(A)
ISAT,30%(A)
RDC typ.(mΩ)
RDC max.(mΩ)
fres(MHz)
Ti
Ø OD(mm)
Ø ID(mm)
Qty.
κ(W/(m*K))
Pins
Type
Mount
L(mm)
H(mm)
IR(A)
Working Voltage(V (AC))
Operating Temperature
Samples
WCAP-CSGP MLCCs 16 V(DC), 100 nF, ±10%
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance100 nF
Capacitance±10% 
Rated Voltage16 V (DC)
Size0603 
Dissipation Factor3.5 %
Insulation Resistance5 GΩ
Ceramic TypeX7R Class II 
Width0.8 mm
Pad Dimension0.4 mm
Packaging7" Tape & Reel 
Packaging Unit4000 
Length1.6 mm
Height0.8 mm
Operating Temperature -55 °C up to +125 °C
WA-SMSI SMT Steel Spacer with internal Thread M2.5, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
PackagingTape and Reel 
Inner ThreadM2.5 
Outer Diameter5.1 mm
Inner Diameter3.5 mm
Packaging Unit1500 
Length1 mm
Operating Temperature -55 °C up to +150 °C
WR-PHD Jumper, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Product seriesWR-PHD Jumper
Insulation Resistance1000 MΩ
PackagingBag 
Packaging Unit1000 
Pins
Rated Current3 A
Working Voltage200 V (AC)
Operating Temperature -25 °C up to +105 °C
WR-PHD Pin Header, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Product seriesWR-PHD Pin Header
Insulation Resistance1000 MΩ
PackagingBag 
Packaging Unit1000 
Pins
TypeStraight 
MountTHT 
Length6 mm
Rated Current2 A
Working Voltage200 V (AC)
Operating Temperature -40 °C up to +105 °C
WE-XHMI SMT Power Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Size1090 
Width10.5 mm
Inductance4.7 µH
Performance Rated Current20 A
Saturation Current @ 30%28.05 A
DC Resistance5 mΩ
DC Resistance5.5 mΩ
Self Resonant Frequency21 MHz
Packaging Unit300 
Pins
MountSMT 
Length11.6 mm
Height8.8 mm
Rated Current13.5 A
Operating Temperature -40 °C up to +125 °C
WE-TGS Graphite Sheet, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Product seriesWE-TGS Graphite Sheet
Width100 mm
Thermal Conductivity1800 W/(m*K)
Length100 mm
Height0.037 mm
Operating Temperature -50 °C up to +120 °C