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Analog Devices LT8418 | Demoboard EVAL-LT8418-BZ
100V Half-Bridge GaN Driver with Smart Integrated Bootstrap Switch
Details
| Topologie | Gegentaktwandler (Halbbrücken) |
| Eingangsspannung | 80 V |
| Schaltfrequenz | 100-10000 kHz |
| Ausgang 1 | 80 V / 10 A |
Beschreibung
The EVAL-LT8418-BZ evaluation circuit features the LT8418 driving two 100V enhanced Gallium Nitride (eGaN) FETs in a half-bridge configuration. The circuit is optimized as a buck converter, but it can be used as a boost converter or other converter topologies consisting of a half-bridge. The evaluation circuit can deliver up to 10A with good thermal management.An external single or two PWM signals are required to drive the board, depending on the configuration. In the single-input setup, the dead time circuitry on the board is utilized to generate the complement signal and set the dead time. The dead time circuitry is bypassed in the dual-input setup. The LT8418 driver has powerful 0.2Ω pull-down and 0.6Ω pull-up drivers driving two 100V GaN FETs. It also integrates a smart integrated bootstrap switch to generate a balanced bootstrap voltage from VCC with a minimum dropout voltage. The LT8418 provides split gate drivers to adjust the turn-on and turn-off slew rates of GaN FETs to suppress ringing and optimize EMI performance.
Eigenschaften
- Half-Bridge Gate Driver for GaN FETs
- 0.6Ω Pull-Up Resistance at Top Gate Driver
- 0.2Ω Pull-Down Resistance at Bottom Gate Driver
- 4A Peak Source, 8A Peak Sink Current Capability
- Smart Integrated Bootstrap Switch
- Split-Gate-Driver to Adjust Turn-On/Turn-Off Strength
- Default Low-State for All Driver Inputs and Outputs
- Maximum 15V Voltage Rating at INT and INB Inputs
- Independent INT, INB Inputs with TTL Logic Compatible
- Fast Propagation Delay: 10ns (Typical)
- Propagation Delay Matching: 1.5ns (Typical)
- Balanced Driver Supply Voltage: VBST ≈ VCC = 3.85V – 5.5V
- Undervoltage and Overvoltage Lockout Protections
- Small 12-Ball WLCSP Package
Typische Anwendungen
- Automotive
- Consumer
- Data Center Power Supplies
- Industrial
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | C | Tol. C | VR(V (DC)) | Bauform | DF(%) | RISO | Keramiktyp | B(mm) | Fl(mm) | Verpackung | L(µH) | IRP,40K(A) | ISAT,30%(A) | RDC typ.(mΩ) | RDC max.(mΩ) | fres(MHz) | Ti | Ø OD(mm) | Ø ID(mm) | VPE | κ(W/(m*K)) | Pins | Typ | Montageart | L(mm) | H(mm) | IR(A) | Arbeitsspannung(V (AC)) | Betriebstemperatur | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| WCAP-CSGP MLCCs 16 V(DC), 100 nF, ±10% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 16 V(DC) | Kapazität100 nF | Kapazität±10% | Nennspannung16 V (DC) | Bauform0603 | Verlustfaktor3.5 % | Isolationswiderstand5 GΩ | KeramiktypX7R Klasse II | Breite0.8 mm | Pad Dimension0.4 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | – | – | – | Verpackungseinheit4000 | – | – | – | – | Länge1.6 mm | Höhe0.8 mm | – | – | Betriebstemperatur -55 °C up to +125 °C | |||||
 | WA-SMSI SMT Stahl Spacer mit Innengewinde M2.5, –, – | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWA-SMSI SMT Stahl Spacer mit Innengewinde M2.5 | – | – | – | – | – | – | – | – | – | VerpackungTape and Reel | – | – | – | – | – | – | InnengewindeM2.5 | Außendurchmesser5.1 mm | Innendurchmesser3.5 mm | Verpackungseinheit1500 | – | – | – | – | Länge1 mm | – | – | – | Betriebstemperatur -55 °C up to +150 °C | |||
 | WR-PHD Kurzschlussbrücken, –, – | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWR-PHD Kurzschlussbrücken | – | – | – | – | – | Isolationswiderstand1000 MΩ | – | – | – | VerpackungBeutel | – | – | – | – | – | – | – | – | – | Verpackungseinheit1000 | – | Pins2 | – | – | – | – | Nennstrom3 A | Arbeitsspannung200 V (AC) | Betriebstemperatur -25 °C up to +105 °C | |||
 | WR-PHD Stiftleisten, –, – | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWR-PHD Stiftleisten | – | – | – | – | – | Isolationswiderstand1000 MΩ | – | – | – | VerpackungBeutel | – | – | – | – | – | – | – | – | – | Verpackungseinheit1000 | – | Pins3 | TypGerade | MontageartTHT | Länge6 mm | – | Nennstrom2 A | Arbeitsspannung200 V (AC) | Betriebstemperatur -40 °C up to +105 °C | |||
 | WE-XHMI SMT Speicherdrossel, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-XHMI SMT Speicherdrossel | – | – | – | Bauform1090 | – | – | – | Breite10.5 mm | – | – | Induktivität4.7 µH | Performance Nennstrom20 A | Sättigungsstrom @ 30%28.05 A | Gleichstromwiderstand5 mΩ | Gleichstromwiderstand5.5 mΩ | Eigenresonanzfrequenz21 MHz | – | – | – | Verpackungseinheit300 | – | Pins2 | – | MontageartSMT | Länge11.6 mm | Höhe8.8 mm | Nennstrom13.5 A | – | Betriebstemperatur -40 °C up to +125 °C | ||||
 | WE-TGS Graphitfolie, –, – | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-TGS Graphitfolie | – | – | – | – | – | – | – | Breite100 mm | – | – | – | – | – | – | – | – | – | – | – | – | Wärmeleitfähigkeit1800 W/(m*K) | – | – | – | Länge100 mm | Höhe0.037 mm | – | – | Betriebstemperatur -50 °C up to +120 °C |