IC manufacturers Analog Devices

IC manufacturers (103)

Analog Devices LT4276 | Demoboard N/A

LTPoE++/PoE+/PoE PD Forward/Flyback Controller

Overview

TopologyForward Converter
Input voltage37-57 V
Switching frequency200-223 kHz
Output 15 V / 13 A
IC revisionA

Description

The LT®4276 is a pin-for-pin compatible family of IEEE 802.3 and LTPoE++ Powered Device (PD) controllers. It includes an isolated switching regulator controller capable of synchronous operation in both forward and flyback topologies with auxiliary power support.The LT4276A employs the LTPoE++ classification scheme, receiving 38.7W, 52.7W, 70W or 90W of power at the PD RJ45 connector, and is backwards compatible with IEEE 802.3. The LT4276B is a fully 802.3at compliant, 25.5W Type 2 (PoE+) PD. The LT4276C is a fully 802.3af compliant, 13W Type 1 (PoE) PD.The LT4276 supports both forward and flyback power supply topologies, configurable for a wide range of PoE applications. The flyback topology supports No-Opto feedback. Auxiliary input voltage can be accurately sensed with just a resistor divider connected to the AUX pin.The LT4276 utilizes an external, low RDS(ON) N-channel MOSFET for the Hot Swap function, maximizing power delivery and efficiency, reducing heat dissipation, and easing the thermal design

Features

  • IEEE802.3af/at and LTPoE++™ 90W Powered Device (PD) with Forward/Flyback Controller
  • LT4276A Supports All of the Following Standards:
  • LTPoE++ 38.7W, 52.7W, 70W and 90W
  • IEEE 802.3at 25.5W Compliant
  • IEEE 802.3af up to 13W Compliant
  • LT4276B is IEEE 802.3at/af Compliant
  • LT4276C is IEEE 802.3af Compliant
  • Superior Surge Protection (100V Absolute Maximum)
  • Wide Junction Temperature Range (–40°C to 125°C)
  • Auxiliary Power Support as Low as 9V
  • No Opto-Isolator Required for Flyback Operation
  • External Hot Swap™ N-Channel MOSFET for Lowest Power Dissipation and Highest System Efficiency
  • 94% End-to-End Efficiency with LT4321 Ideal Bridge

  • Available in a 28-Lead 4mm × 5mm QFN Package

Typical applications

  • Outdoor Security Camera Equipment
  • High Temperature Applications
  • High Power Wireless Data Systems, Commercial and Public Information Displays

More information

Products

Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
IRP,40K(A)
ISAT,10%(A)
ISAT,30%(A)
RDC(mΩ)
fres(MHz)
Material
RDC max.(mΩ)
LR(µH)
ISAT(A)
LSmin.(µH)
Version
VIN
VOut1(V)
IOut1(A)
L(µH)
n
VT(V (AC))
Size
Mount
Vaux(V)
RDC 1(mΩ)
RDC 2(mΩ)
RDC 3(mΩ)
Samples
WE-HCI SMT Flat Wire High Current Inductor, 6.6 A, 2 A
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Performance Rated Current6.6 A
Saturation Current @ 10%2 A
Saturation Current @ 30%6 A
DC Resistance21.5 mΩ
Self Resonant Frequency50 MHz
MaterialSuperflux 
DC Resistance23.65 mΩ
Rated Inductance4.5 µH
VersionSMT 
Inductance6.5 µH
Size7050 
MountSMT 
WE-HCI SMT Flat Wire High Current Inductor, 8.3 A, 2.2 A
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Performance Rated Current8.3 A
Saturation Current @ 10%2.2 A
Saturation Current @ 30%6.5 A
DC Resistance14.5 mΩ
Self Resonant Frequency56 MHz
MaterialSuperflux 
DC Resistance15.95 mΩ
Rated Inductance3.4 µH
VersionSMT 
Inductance4.9 µH
Size7050 
MountSMT 
WE-HCC SMT High Current Cube Inductor, 8.9 A, 9.3 A
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Performance Rated Current8.9 A
Saturation Current @ 10%9.3 A
Saturation Current @ 30%12.5 A
Self Resonant Frequency36 MHz
MaterialFerrite 
DC Resistance15 mΩ
Rated Inductance2.8 µH
VersionSMT 
Inductance8.2 µH
Size1090 
MountSMT 
WE-PoE+ Power over Ethernet Plus Transformer, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Saturation Current3.5 A
Leakage Inductance [min.]0.47 µH
VersionCCM Flyback 
Input Voltage 37 - 57 V (DC)
Output Voltage 112 V
Output Current 12.1 A
Inductance38 µH
Turns Ratio2:1:1.1 
Insulation Test Voltage1500 V (AC)
SizeEP13 
MountSMT 
Auxiliary Voltage12.5 V
DC Resistance 185 mΩ
DC Resistance 225 mΩ
DC Resistance 3155 mΩ
WE-PoE+ Power over Ethernet Plus Transformer, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Saturation Current3.2 A
Leakage Inductance [min.]0.625 µH
VersionCCM Flyback 
Input Voltage 37 - 57 V (DC)
Output Voltage 13.3 V
Output Current 17.5 A
Inductance38 µH
Turns Ratio6.67:1:4 
Insulation Test Voltage1500 V (AC)
SizeEP13 
MountSMT 
Auxiliary Voltage12.7 V
DC Resistance 1100 mΩ
DC Resistance 23 mΩ
DC Resistance 3182 mΩ
749022016
10/100/1000 Base-T SMT Transformer, –, –
Simu­lation
Downloads
Status Activei| Production is active. Expected lifetime: >10 years.
Product series 10/100/1000 Base-T SMT Transformer
Inductance350 µH
Insulation Test Voltage1500 V (AC)
MountSMT 
WE-PoE Power over Ethernet Transformer, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Saturation Current3 A
VersionFlyback 
Input Voltage 40 - 57 V (DC)
Output Voltage 15 V
Output Current 14.6 A
Inductance37 µH
Turns Ratio4.5:1:2.5 
Insulation Test Voltage2400 V (AC)
SizeEP13 
MountSMT 
Auxiliary Voltage12 V
DC Resistance 168 mΩ
DC Resistance 25 mΩ
DC Resistance 3123 mΩ
WE-PoE++ Power over Ethernet Plus Plus Transformer, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
VersionForward 
Input Voltage 40 - 57 V (DC)
Output Voltage 15 V
Output Current 117 A
Inductance175 µH
Turns Ratio3.5:1:2.25 
Insulation Test Voltage2400 V (AC)
SizeEFD20 
MountSMT 
Auxiliary Voltage10.75 V
DC Resistance 150 mΩ
DC Resistance 210 mΩ
DC Resistance 3188 mΩ
WE-PoE Power over Ethernet Transformer, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Saturation Current1.8 A
VersionFlyback 
Input Voltage 36 - 57 V (DC)
Output Voltage 15 V
Output Current 12.3 A
Inductance44 µH
Turns Ratio4:1:1:2.5 
Insulation Test Voltage2400 V (AC)
SizeEP7 
MountSMT 
Auxiliary Voltage12 V
DC Resistance 1305 mΩ
DC Resistance 240 mΩ
DC Resistance 340 mΩ
WE-PoE Power over Ethernet Transformer, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Saturation Current2.75 A
VersionFlyback 
Input Voltage 40 - 57 V (DC)
Output Voltage 124 V
Output Current 11 A
Inductance37 µH
Turns Ratio1:1:0.56 
Insulation Test Voltage2400 V (AC)
SizeEP13 
MountSMT 
Auxiliary Voltage12.5 V
DC Resistance 179 mΩ
DC Resistance 260 mΩ
DC Resistance 3116 mΩ
WE-PoE+ Power over Ethernet Plus Transformer, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Saturation Current3.8 A
VersionFlyback 
Input Voltage 48 - 57 V (DC)
Output Voltage 15 V
Output Current 17 A
Inductance26 µH
Turns Ratio4.5:1:2.5 
Insulation Test Voltage2400 V (AC)
SizeEP13 
MountSMT 
Auxiliary Voltage12 V
DC Resistance 194 mΩ
DC Resistance 27 mΩ
DC Resistance 3233 mΩ
WE-PoE Power over Ethernet Transformer, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Saturation Current8.5 A
VersionFlyback 
Input Voltage 9 - 57 V (DC)
Output Voltage 112 V
Output Current 12 A
Inductance9 µH
Turns Ratio1:1.12:1 
Insulation Test Voltage1500 V (AC)
SizeEFD20 
MountSMT 
Auxiliary Voltage10 V
DC Resistance 112.5 mΩ
DC Resistance 214 mΩ
DC Resistance 3385 mΩ