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Analog Devices ADUM4136
Using the ADuM4136 Isolated Gate Driver and LT3999 DC-to-DC Converter to Drive a 1200 V SiC Power Module
Overview
| Topology | Other Topology |
| Input voltage | 2.5-6 V |
Description
The success of power developments, such as electric vehicles,renewable energies, and energy storage systems depend on the efficient implementation of electrical power conversion schemes. The core of a power electronic converter contains specialized semiconductor devices and the strategy used to switch these semiconductors on and off, which is achieved with gate drivers. State-of-the-art wideband devices, such as silicon carbide (SiC) and gallium nitride (GaN) semiconductors feature increased capabilities, such as high voltage ratings from 600 V to 2000 V, low channel impedance, and fast switching speeds up to the megahertz range. These capabilities augment the requirements from gate drivers, for example, shorter propagation delays and improved short-circuit protection via desaturation. This application note demonstrates the advantages of the ADuM4136 gate driver, a single-channel device with an output drive capability of up to 4 A, a maximum common-mode transient immunity (CMTI) of 150 kV/μs, and fast fault management that includes desaturation protection. A gate driver unit (GDU) for SiC power devices was developed in collaboration with Stercom Power Solutions GmbH showcases the capabilities of the ADuM4136 (see Figure 1). The board is powered with a bipolar, isolated supply based on a push-pull converter that was built with the LT3999 power driver. This monolithic, high voltage, high frequency, dc-to-dc conversion driver features 1 A dual switches with a programmable current limit, frequency synchronization up to 1 MHz, a wide operating range of 2.7 V to 36 V, and a shutdown current of <1 μA.The solution was tested on a SiC metal-oxide semiconductor field-effect transistor (MOSFET) power module (F23MR12W1M1_ B11) with a 1200 V drain source breakdown voltage, typical channel resistance of 22.5 mΩ, and pulsed drain current capability of 100 A, with maximum rated gate source voltages of −10 V and +20 V. This application note evaluates the dead time generated by the solution and investigates the total propagation delay introduced by the GDU. Desaturation detection is tested for protection of the SiC devices from overload and short-circuit conditions. The fast response of the solution is verified by the results of the tests.
Features
- 4 A peak drive output capability
- Output power device resistance < 1Ω
- Desaturation protection Isolated Fault output Soft Shutdown on Fault
- Isolated Fault and Ready functions
- Low propagation delay 55 ns typical
- Minimum pulse width: 50 ns
- Operating temperature range: −40°C to +125°C
- Output voltage range to 35 V
- See data sheet for additional features
Typical applications
- MOSFET/IGBT Drivers, Motor Drives
- Power supplies
More information
Products
Order Code | Datasheet | Simulation | Downloads | Status | Product series | λDom typ.(nm) | Emitting Color | λPeak typ.(nm) | IV typ.(mcd) | VF typ.(V) | Chip Technology | 2θ50% typ.(°) | ISAT(A) | fres(MHz) | Mount | Pins | Version | L(mm) | H(mm) | Operating Temperature | Packaging | Z @ 100 MHz(Ω) | Zmax(Ω) | Test Condition Zmax | IR 2(mA) | RDC max.(Ω) | Type | Winding Style | L(µH) | IR(mA) | VR(V) | VT(V (DC)) | SamplesAvailability & Sample | ||
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 | SPECWL-SMCW SMT Mono-color Chip LED Waterclear, 525 nm, Green | Availability – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWL-SMCW SMT Mono-color Chip LED Waterclear | Dominant Wavelength [typ.]525 nm | Emitting ColorGreen | Peak Wavelength [typ.]515 nm | Luminous Intensity [typ.]450 mcd | Forward Voltage [typ.]3.2 V | Chip TechnologyInGaN | Viewing Angle Phi 0° [typ.]140 ° | – | – | MountSMT | – | – | Length2 mm | Height0.7 mm | Operating Temperature -40 °C up to +85 °C | PackagingTape and Reel | – | – | – | – | – | – | – | – | – | – | – | –Check availability | |||
 | SPECWE-CBF SMT EMI Suppression Ferrite Bead, –, – | Availability – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-CBF SMT EMI Suppression Ferrite Bead | – | – | – | – | – | – | – | – | – | MountSMT | – | VersionSMT | Length1.6 mm | Height0.8 mm | Operating Temperature -55 °C up to +125 °C | – | Impedance @ 100 MHz1000 Ω | Maximum Impedance1100 Ω | Maximum Impedance150 MHz | Rated Current 2650 mA | DC Resistance0.85 Ω | TypeWide Band | – | – | Rated Current100 mA | – | – | –Check availability | |||
 | SPECWE-CBF SMT EMI Suppression Ferrite Bead, –, – | Availability – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-CBF SMT EMI Suppression Ferrite Bead | – | – | – | – | – | – | – | – | – | MountSMT | – | VersionSMT | Length3.2 mm | Height1.1 mm | Operating Temperature -55 °C up to +125 °C | – | Impedance @ 100 MHz1000 Ω | Maximum Impedance1250 Ω | Maximum Impedance75 MHz | Rated Current 21300 mA | DC Resistance0.45 Ω | TypeWide Band | – | – | Rated Current200 mA | – | – | –Check availability | |||
| SPECWE-CBF SMT EMI Suppression Ferrite Bead, –, – | Availability – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-CBF SMT EMI Suppression Ferrite Bead | – | – | – | – | – | – | – | – | – | MountSMT | – | VersionSMT | Length3.2 mm | Height1.1 mm | Operating Temperature -55 °C up to +125 °C | – | Impedance @ 100 MHz1000 Ω | Maximum Impedance1100 Ω | Maximum Impedance90 MHz | Rated Current 21000 mA | DC Resistance0.3 Ω | TypeHigh Current | – | – | Rated Current800 mA | – | – | –Check availability | |||
 | SPECWE-CNSW SMT Common Mode Line Filter, –, – | Availability – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-CNSW SMT Common Mode Line Filter | – | – | – | – | – | – | – | – | – | MountSMT | Pins4 | VersionSMT | Length3.2 mm | Height1.8 mm | Operating Temperature -40 °C up to +125 °C | – | Impedance @ 100 MHz2200 Ω | – | – | – | DC Resistance1.2 Ω | – | Winding Stylebifilar | Inductance2.578 µH | Rated Current200 mA | Rated Voltage50 V | Insulation Test Voltage125 V (DC) | –Check availability | |||
 | SPECWE-TPC SMT Tiny Power Inductor, –, – | Availability – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-TPC SMT Tiny Power Inductor | – | – | – | – | – | – | – | Saturation Current0.45 A | Self Resonant Frequency10 MHz | MountSMT | Pins2 | VersionSMT | Length5.8 mm | Height2.8 mm | Operating Temperature -40 °C up to +125 °C | – | – | – | – | – | DC Resistance0.48 Ω | – | – | Inductance100 µH | Rated Current450 mA | – | – | –Check availability | |||
 | SPECWR-BHD 2.54 mm Male, –, – | Simulation– | Availability – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWR-BHD 2.54 mm Male | – | – | – | – | – | – | – | – | – | MountTHT | Pins10 | VersionWith locking lever | Length32.2 mm | – | Operating Temperature -40 °C up to +105 °C | PackagingTray | – | – | – | – | – | TypeStraight | – | – | Rated Current3000 mA | – | – | –Check availability |
| Expected Availability | Opening inventory | Quantity |
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| Current Availability | – | – |