Analog Devices ADUM4136

Beschreibung

The success of power developments, such as electric vehicles,renewable energies, and energy storage systems depend on the efficient implementation of electrical power conversion schemes. The core of a power electronic converter contains specialized semiconductor devices and the strategy used to switch these semiconductors on and off, which is achieved with gate drivers. State-of-the-art wideband devices, such as silicon carbide (SiC) and gallium nitride (GaN) semiconductors feature increased capabilities, such as high voltage ratings from 600 V to 2000 V, low channel impedance, and fast switching speeds up to the megahertz range. These capabilities augment the requirements from gate drivers, for example, shorter propagation delays and improved short-circuit protection via desaturation. This application note demonstrates the advantages of the ADuM4136 gate driver, a single-channel device with an output drive capability of up to 4 A, a maximum common-mode transient immunity (CMTI) of 150 kV/μs, and fast fault management that includes desaturation protection. A gate driver unit (GDU) for SiC power devices was developed in collaboration with Stercom Power Solutions GmbH showcases the capabilities of the ADuM4136 (see Figure 1). The board is powered with a bipolar, isolated supply based on a push-pull converter that was built with the LT3999 power driver. This monolithic, high voltage, high frequency, dc-to-dc conversion driver features 1 A dual switches with a programmable current limit, frequency synchronization up to 1 MHz, a wide operating range of 2.7 V to 36 V, and a shutdown current of <1 μA.The solution was tested on a SiC metal-oxide semiconductor field-effect transistor (MOSFET) power module (F23MR12W1M1_ B11) with a 1200 V drain source breakdown voltage, typical channel resistance of 22.5 mΩ, and pulsed drain current capability of 100 A, with maximum rated gate source voltages of −10 V and +20 V. This application note evaluates the dead time generated by the solution and investigates the total propagation delay introduced by the GDU. Desaturation detection is tested for protection of the SiC devices from overload and short-circuit conditions. The fast response of the solution is verified by the results of the tests.

Eigenschaften

• 4 A peak drive output capability
• Output power device resistance < 1Ω
• Desaturation protection Isolated Fault output Soft Shutdown on Fault
• Isolated Fault and Ready functions
• Low propagation delay 55 ns typical
• Minimum pulse width: 50 ns
• Operating temperature range: −40°C to +125°C
• Output voltage range to 35 V
• See data sheet for additional features

Typische Anwendungen

• MOSFET/IGBT Drivers, Motor Drives
• Power supplies

Weiterführende Informationen

• Datenblatt
• Produktseite des IC-Herstellers