IC-Hersteller Texas Instruments
IC-Hersteller (103)
- Alle Hersteller
Analog Devices
Infineon Technologies
Microchip
Onsemi
Renesas
ROHM
STMicroelectronics
Texas Instruments
- 3peak incorporated (28)
- Ablic (23)
- Acco Semiconductor (1)
- Advanced Power (4)
- Allegro Microsystems (100)
- Alpha & Omega Semiconductor (37)
- AnalogySemi (3)
- AnDAPT Inc (204)
- Anpec (13)
- AXElite (2)
- Backward (6)
- Bright Power Semiconductor (1)
- Broadcom (46)
- Cambridge GaN Devices (18)
- Chipanalog Micro (10)
- Cologne Chips (1)
- Convenient Power (1)
- Dialog Semiconductor (12)
- Diodes Incorporated (259)
- Divimath (8)
- Elmos AG (1)
- EPC (140)
- e-Peas Semiconductors (1)
- Eta Solutions Co. Ltd. (9)
- GaN Systems (8)
- GaNPower (3)
- Giantec (1)
- Gstek Wuxi (1)
- Helix Semiconductor (7)
- IKON (1)
- Indie Semiconductor (8)
- Innovision Semiconductor Inc (2)
- Intel (68)
- Inventchip Technology (3)
- ISSI (51)
- JoulWatt (20)
- KDPOF (3)
- Kinetic Technology (8)
- Lattice semiconductor Corporation (38)
- Littelfuse (1)
- Lumissil Microsystems (8)
- M3 Technology (M3Tek) (7)
- Macnica (22)
- Marvell Semiconductor (1)
- MaxLinear (181)
- Menlo Micro (1)
- MikroE (25)
- MindCet (2)
- Monolithic Power Systems (980)
- Navitas Semiconductor Inc (6)
- NewEdge Technologies, Inc. (1)
- Nexperia (267)
- Nisshinbo Micro Device Inc. (10)
- Novosense Micro (1)
- NXP (335)
- O2 Micro International Ltd (10)
- On Bright (7)
- Panasonic (2)
- PN Junction Semiconductor (2)
- Power Integrations (117)
- Powermat (1)
- Pulsiv (19)
- Qorvo (96)
- Realsil SuRealsil(tek) Microelectronics (1)
- Richtek (297)
- Sanken Electric Co., Ltd. (16)
- Sckipio (6)
- Semtech (86)
- SG-Micro (57)
- SiFive (2)
- Silanna Semiconductor (9)
- Silergy Corporation (33)
- Silicon Laboratory Inc. (108)
- Silicontent Technology (59)
- Silvertel (59)
- Skycore Semiconductors (1)
- Skyworks (33)
- Southchip (14)
- Summit Wireless (1)
- Tagore Tech (7)
- Taiwan Semiconductor (1)
- TDK Corporation (1)
- Tempo Semiconductor (1)
- Torex (37)
- Toshiba (25)
- Transphorm (21)
- TransSIP (2)
- Union (21)
- uPI Semiconductor (2)
- Valens Semiconductor (31)
- Wise Integration (3)
- Wolfspeed (23)
- Xilinx (22)
- XL Semiconductor (3)
- XYSemi (62)
Texas Instruments TPS62823 | Demoboard TIDA-010011
High Efficiency Power Supply Architecture Reference Design for Protection Relay Processor Module
Details
| Topologie | Sonstige Topologie |
| IC-Revision | 1 |
Beschreibung
This reference design showcases various power architectures for generating multiple voltage rails for an application processor module, requiring >1A load current and high efficiency. The required power supply is generated using 5-, 12- or 24-V DC input from the backplane. Power supplies are generated using DC-DC converters with an integrated FET and a power module with an integrated inductor for size. The design features a HotRod™ package type for applications requiring low EMI. It is also optimal for design time constrained applications. Additional features include DDR termination regulator, input supply OR-ing, voltage sequencing, eFuse for overload protection, and voltage and load current monitoring. This design can be used with a processor, digital signal processor and field-programmable gate array. It has been tested for radiated emission, per CISPR22 meeting class A and B requirements.
Eigenschaften
- Power supply generation with 24-V input using synchronous step down DC-DC converter with integrated FET, compact nano power module with excellent load transient performance and accurate output regulation
- Power modules in QFN package that offer optimal thermal performance
- DC-DC converters in HotRod™ package for low EMI
- Power supply generation with 12-V input using OR-ing controller for redundant operation interfaced to high efficiency DC-DC converter or external evaluation module
- Point of load (POL) supply generation with 5-V input using PMIC , DC-DC converter and linear regulators or DC-DC converter > 3A load with improved low load efficiency and load sharing
- Clean supply using 1A, dual-output, low dropout linear regulator with low-noise, high-bandwidth PSRRR
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | λDom typ.(nm) | Emittierte Farbe | λPeak typ.(nm) | IV typ.(mcd) | VF typ.(V) | Chiptechnologie | 2θ50% typ.(°) | L(µH) | IRP,40K(A) | ISAT,30%(A) | RDC typ.(mΩ) | fres(MHz) | VOP(V) | Montageart | IR(A) | ISAT(A) | RDC max.(mΩ) | Bauform | Version | ISAT,10%(A) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WL-SMCW SMT Mono-color Chip LED Waterclear, 570 nm, Hellgrün | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWL-SMCW SMT Mono-color Chip LED Waterclear | dominante Wellenlänge [typ.]570 nm | Emittierte FarbeHellgrün | Spitzen-Wellenlänge [typ.]572 nm | Lichtstärke [typ.]40 mcd | Durchlassspannung [typ.]2 V | ChiptechnologieAlInGaP | Abstrahlwinkel Phi 0° [typ.]140 ° | – | – | – | – | – | – | MontageartSMT | – | – | – | Bauform0603 | – | – | ||||
 | WE-TPC SMT-Speicherdrossel, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-TPC SMT-Speicherdrossel | – | – | – | – | – | – | – | Induktivität6.8 µH | – | – | Gleichstromwiderstand142 mΩ | Eigenresonanzfrequenz59 MHz | – | MontageartSMT | Nennstrom1.1 A | Sättigungsstrom1.3 A | Gleichstromwiderstand165 mΩ | Bauform2828 | VersionSMT | – | ||||
 | WE-TPC SMT-Speicherdrossel, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-TPC SMT-Speicherdrossel | – | – | – | – | – | – | – | Induktivität5 µH | – | – | Gleichstromwiderstand50 mΩ | Eigenresonanzfrequenz55 MHz | – | MontageartSMT | Nennstrom1.65 A | Sättigungsstrom1.8 A | Gleichstromwiderstand60 mΩ | Bauform5818 | VersionSMT | – | ||||
 | WE-PD SMT-Speicherdrossel, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | – | – | – | – | – | – | – | Induktivität2.2 µH | Performance Nennstrom5.6 A | Sättigungsstrom @ 30%6 A | Gleichstromwiderstand19 mΩ | Eigenresonanzfrequenz67 MHz | Betriebsspannung120 V | MontageartSMT | – | – | Gleichstromwiderstand23 mΩ | Bauform7332 | VersionRobust | Sättigungsstrom 14.8 A | ||||
 | WE-PD2 SMT-Speicherdrossel, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD2 SMT-Speicherdrossel | – | – | – | – | – | – | – | Induktivität1 µH | Performance Nennstrom5.55 A | Sättigungsstrom @ 30%6.6 A | Gleichstromwiderstand14 mΩ | Eigenresonanzfrequenz110 MHz | Betriebsspannung120 V | MontageartSMT | Nennstrom4 A | Sättigungsstrom5.72 A | Gleichstromwiderstand49 mΩ | Bauform4532 | – | Sättigungsstrom 15.72 A | ||||
 | WE-PD4 SMT-Speicherdrossel, –, – | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD4 SMT-Speicherdrossel | – | – | – | – | – | – | – | Induktivität15 µH | – | – | Gleichstromwiderstand43 mΩ | Eigenresonanzfrequenz17 MHz | Betriebsspannung120 V | MontageartSMT | Nennstrom2.9 A | Sättigungsstrom3.6 A | Gleichstromwiderstand60 mΩ | BauformL | – | – | |||
 | WE-MAPI SMT-Speicherdrossel, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MAPI SMT-Speicherdrossel | – | – | – | – | – | – | – | Induktivität2.2 µH | Performance Nennstrom1.65 A | Sättigungsstrom @ 30%3.3 A | Gleichstromwiderstand225 mΩ | Eigenresonanzfrequenz70 MHz | Betriebsspannung80 V | MontageartSMT | Nennstrom1.1 A | Sättigungsstrom2.5 A | Gleichstromwiderstand270 mΩ | Bauform2010 | VersionSMT | Sättigungsstrom 11.65 A | ||||
 | WE-LHMI SMT Speicherdrossel, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LHMI SMT Speicherdrossel | – | – | – | – | – | – | – | Induktivität1 µH | Performance Nennstrom6.2 A | Sättigungsstrom @ 30%12.5 A | Gleichstromwiderstand22 mΩ | Eigenresonanzfrequenz89 MHz | Betriebsspannung120 V | MontageartSMT | – | – | Gleichstromwiderstand27 mΩ | Bauform4020 | – | Sättigungsstrom 16.5 A | ||||
| WE-LHMI SMT Speicherdrossel, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LHMI SMT Speicherdrossel | – | – | – | – | – | – | – | Induktivität1.5 µH | Performance Nennstrom4.9 A | Sättigungsstrom @ 30%10.1 A | Gleichstromwiderstand34.8 mΩ | Eigenresonanzfrequenz64 MHz | Betriebsspannung120 V | MontageartSMT | – | – | Gleichstromwiderstand42 mΩ | Bauform4020 | – | Sättigungsstrom 15.65 A |