IC manufacturers Texas Instruments

IC manufacturers (103)

Texas Instruments TPS62823 | Demoboard TIDA-010011

High Efficiency Power Supply Architecture Reference Design for Protection Relay Processor Module

Overview

TopologyOther Topology
IC revision1

Description

This reference design showcases various power architectures for generating multiple voltage rails for an application processor module, requiring >1A load current and high efficiency. The required power supply is generated using 5-, 12- or 24-V DC input from the backplane. Power supplies are generated using DC-DC converters with an integrated FET and a power module with an integrated inductor for size. The design features a HotRod™ package type for applications requiring low EMI. It is also optimal for design time constrained applications. Additional features include DDR termination regulator, input supply OR-ing, voltage sequencing, eFuse for overload protection, and voltage and load current monitoring. This design can be used with a processor, digital signal processor and field-programmable gate array. It has been tested for radiated emission, per CISPR22 meeting class A and B requirements.

Features

  • Power supply generation with 24-V input using synchronous step down DC-DC converter with integrated FET, compact nano power module with excellent load transient performance and accurate output regulation
  • Power modules in QFN package that offer optimal thermal performance
  • DC-DC converters in HotRod™ package for low EMI
  • Power supply generation with 12-V input using OR-ing controller for redundant operation interfaced to high efficiency DC-DC converter or external evaluation module
  • Point of load (POL) supply generation with 5-V input using PMIC , DC-DC converter and linear regulators or DC-DC converter > 3A load with improved low load efficiency and load sharing
  • Clean supply using 1A, dual-output, low dropout linear regulator with low-noise, high-bandwidth PSRRR

Products

Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
λDom typ.(nm)
Emitting Color
λPeak typ.(nm)
IV typ.(mcd)
VF typ.(V)
Chip Technology
50% typ.(°)
L(µH)
IRP,40K(A)
ISAT,30%(A)
RDC typ.(mΩ)
fres(MHz)
VOP(V)
Mount
IR(A)
ISAT(A)
RDC max.(mΩ)
Size
Version
ISAT,10%(A)
Samples
WL-SMCW SMT Mono-color Chip LED Waterclear, 570 nm, Bright Green
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Dominant Wavelength [typ.]570 nm
Emitting ColorBright Green 
Peak Wavelength [typ.]572 nm
Luminous Intensity [typ.]40 mcd
Forward Voltage [typ.]2 V
Chip TechnologyAlInGaP 
Viewing Angle Phi 0° [typ.]140 °
MountSMT 
Size0603 
WE-TPC SMT Tiny Power Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance6.8 µH
DC Resistance142 mΩ
Self Resonant Frequency59 MHz
MountSMT 
Rated Current1.1 A
Saturation Current1.3 A
DC Resistance165 mΩ
Size2828 
VersionSMT 
WE-TPC SMT Tiny Power Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance5 µH
DC Resistance50 mΩ
Self Resonant Frequency55 MHz
MountSMT 
Rated Current1.65 A
Saturation Current1.8 A
DC Resistance60 mΩ
Size5818 
VersionSMT 
WE-PD SMT Power Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance2.2 µH
Performance Rated Current5.6 A
Saturation Current @ 30%6 A
DC Resistance19 mΩ
Self Resonant Frequency67 MHz
Operating Voltage120 V
MountSMT 
DC Resistance23 mΩ
Size7332 
VersionRobust 
Saturation Current @ 10%4.8 A
WE-PD2 SMT Power Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance1 µH
Performance Rated Current5.55 A
Saturation Current @ 30%6.6 A
DC Resistance14 mΩ
Self Resonant Frequency110 MHz
Operating Voltage120 V
MountSMT 
Rated Current4 A
Saturation Current5.72 A
DC Resistance49 mΩ
Size4532 
Saturation Current @ 10%5.72 A
WE-PD4 SMT Power Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance15 µH
DC Resistance43 mΩ
Self Resonant Frequency17 MHz
Operating Voltage120 V
MountSMT 
Rated Current2.9 A
Saturation Current3.6 A
DC Resistance60 mΩ
Size
WE-MAPI SMT Power Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance2.2 µH
Performance Rated Current1.65 A
Saturation Current @ 30%3.3 A
DC Resistance225 mΩ
Self Resonant Frequency70 MHz
Operating Voltage80 V
MountSMT 
Rated Current1.1 A
Saturation Current2.5 A
DC Resistance270 mΩ
Size2010 
VersionSMT 
Saturation Current @ 10%1.65 A
WE-LHMI SMT Power Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance1 µH
Performance Rated Current6.2 A
Saturation Current @ 30%12.5 A
DC Resistance22 mΩ
Self Resonant Frequency89 MHz
Operating Voltage120 V
MountSMT 
DC Resistance27 mΩ
Size4020 
Saturation Current @ 10%6.5 A
WE-LHMI SMT Power Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance1.5 µH
Performance Rated Current4.9 A
Saturation Current @ 30%10.1 A
DC Resistance34.8 mΩ
Self Resonant Frequency64 MHz
Operating Voltage120 V
MountSMT 
DC Resistance42 mΩ
Size4020 
Saturation Current @ 10%5.65 A