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Texas Instruments TPS2372 | Demoboard TPS2372-4EVM-006
IEEE 802.3bt PoE high-power PD interface with automatic MPS & autoclass
Details
| Topologie | LAN / POE |
| Eingangsspannung | 0-57 V |
Beschreibung
The TPS2372 contains all of the features needed to implement an IEEE802.3at or IEEE802.3bt (draft) (Type 1-4) powered device (PD). The low internal switch resistance allows the TPS2372-4 and TPS2372-3 to support high power applications up to 90 W and 60 W respectively. Assuming 100-meter CAT5 cable, this translates into 71.3 W and 51 W at PD input.The TPS2372 operates with enhanced features.The Automatic MPS function enables applications requiring very low power standby modes. The TPS2372 automatically generates the necessary pulsed current to maintain the PSE power. An external resistor is used to enable this functionality and to program the MPS pulsed current amplitude.The TPS2372 also implements a delay function to allow the remote PSE to complete its inrush phase before releasing the Power Good (PG) output. This ensures that the IEEE802.3bt (draft) startup requirements are met.The Autoclass enable input also allows advanced system power optimization modes compliant with IEEE802.3bt (draft) standard.
Eigenschaften
- IEEE 802.3bt (Draft) PD Solution for Type 3 or Type 4 PoE
- Supports Power Levels for Type-4(TPS2372-4) 90-W and Type-3 (TPS2372-3) 60-W Operation
- Robust 100 V Hotswap MOSFET
- TPS2372-4 (typ.): 0.1-Ω, 2.2-A Current Limit
- TPS2372-3 (typ.): 0.3-Ω, 1.85-A Current Limit
- Allocated Power Indicator Outputs
- PG Output with Inrush Completion Delay
- Compliant to PSE Inrush
- Automatic Maintain Power Signature (MPS)
- Auto-adjust MPS for Type 1-2 or 3-4 PSE
- Supports Ultra-Low Power Standby Modes
- Supports Autoclass Operation
- Supports PoE++ PSE
- -40°C to 125°C Junction Temperature Range
- 20-lead VQFN Package
Typische Anwendungen
- Power Modules, Dual Signature PD/Forced UPOE, 4PPOE
- Pico-base Stations
- Lighting
- Pass-through System, Multiband access points, Dual Signature PD
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | λDom typ.(nm) | Emittierte Farbe | λPeak typ.(nm) | IV typ.(mcd) | VF typ.(V) | Chiptechnologie | 2θ50% typ.(°) | Z @ 100 MHz(Ω) | Zmax(Ω) | Testbedingung Zmax | IR 2(mA) | RDC max.(Ω) | Typ | Wicklungstyp | Wicklungsanzahl | L1(µH) | IR 1(mA) | RDC1 max.(Ω) | VR(V) | Datenrate | Ports | PoE | Improved CMRR | Betriebstemperatur | VT(V (AC)) | Montageart | L(µH) | LSmin.(nH) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 | WE-CBF SMT-Ferrit, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-CBF SMT-Ferrit | – | – | – | – | – | – | – | Impedanz @ 100 MHz300 Ω | Maximale Impedanz450 Ω | Maximale Impedanz250 MHz | Nennstrom 22000 mA | Gleichstromwiderstand0.15 Ω | TypHochstrom | – | Wicklungsanzahl1 | – | Nennstrom [1]2000 mA | Gleichstromwiderstand [1]0.15 Ω | – | – | – | – | – | Betriebstemperatur -55 °C up to +125 °C | – | MontageartSMT | – | – | ||||
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 | WE-LAN LAN Übertrager, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LAN LAN Übertrager | – | – | – | – | – | – | – | – | – | – | – | – | Typ4PPoE (to 900 mA) | – | – | Induktivität [1]350 µH | – | – | – | Datenrate10/100/1000BASE-T | Ports1 | PoE4PPoE (bis zu 1000 mA) | Verbesserte Common Mode EntstörungNein | Betriebstemperatur -40 °C up to +105 °C | Prüfspannung1500 V (AC) | MontageartSMT | Induktivität350 µH | – |