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Texas Instruments TPS2372 | Demoboard TPS2372-4EVM-006
IEEE 802.3bt PoE high-power PD interface with automatic MPS & autoclass
Overview
| Topology | LAN / POE |
| Input voltage | 0-57 V |
Description
The TPS2372 contains all of the features needed to implement an IEEE802.3at or IEEE802.3bt (draft) (Type 1-4) powered device (PD). The low internal switch resistance allows the TPS2372-4 and TPS2372-3 to support high power applications up to 90 W and 60 W respectively. Assuming 100-meter CAT5 cable, this translates into 71.3 W and 51 W at PD input.The TPS2372 operates with enhanced features.The Automatic MPS function enables applications requiring very low power standby modes. The TPS2372 automatically generates the necessary pulsed current to maintain the PSE power. An external resistor is used to enable this functionality and to program the MPS pulsed current amplitude.The TPS2372 also implements a delay function to allow the remote PSE to complete its inrush phase before releasing the Power Good (PG) output. This ensures that the IEEE802.3bt (draft) startup requirements are met.The Autoclass enable input also allows advanced system power optimization modes compliant with IEEE802.3bt (draft) standard.
Features
- IEEE 802.3bt (Draft) PD Solution for Type 3 or Type 4 PoE
- Supports Power Levels for Type-4(TPS2372-4) 90-W and Type-3 (TPS2372-3) 60-W Operation
- Robust 100 V Hotswap MOSFET
- TPS2372-4 (typ.): 0.1-Ω, 2.2-A Current Limit
- TPS2372-3 (typ.): 0.3-Ω, 1.85-A Current Limit
- Allocated Power Indicator Outputs
- PG Output with Inrush Completion Delay
- Compliant to PSE Inrush
- Automatic Maintain Power Signature (MPS)
- Auto-adjust MPS for Type 1-2 or 3-4 PSE
- Supports Ultra-Low Power Standby Modes
- Supports Autoclass Operation
- Supports PoE++ PSE
- -40°C to 125°C Junction Temperature Range
- 20-lead VQFN Package
Typical applications
- Power Modules, Dual Signature PD/Forced UPOE, 4PPOE
- Pico-base Stations
- Lighting
- Pass-through System, Multiband access points, Dual Signature PD
More information
Products
Order Code | Datasheet | Simulation | Downloads | Status | Product series | λDom typ.(nm) | Emitting Color | λPeak typ.(nm) | IV typ.(mcd) | VF typ.(V) | Chip Technology | 2θ50% typ.(°) | Z @ 100 MHz(Ω) | Zmax(Ω) | Test Condition Zmax | IR 2(mA) | RDC max.(Ω) | Type | Winding Style | Number of windings | L1(µH) | IR(mA) | RDC max.(Ω) | VR(V) | Data rate | Ports | PoE | Improved CMRR | Operating Temperature | VT(V (AC)) | Mount | L(µH) | LSmin.(nH) | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WL-SMCW SMT Mono-color Chip LED Waterclear, 590 nm, Yellow | Downloads27 files RAY files
| Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWL-SMCW SMT Mono-color Chip LED Waterclear | Dominant Wavelength [typ.]590 nm | Emitting ColorYellow | Peak Wavelength [typ.]595 nm | Luminous Intensity [typ.]120 mcd | Forward Voltage [typ.]2 V | Chip TechnologyAlInGaP | Viewing Angle Phi 0° [typ.]140 ° | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | Operating Temperature -40 °C up to +85 °C | – | MountSMT | – | – | |||
 | WE-CBF SMT EMI Suppression Ferrite Bead, –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-CBF SMT EMI Suppression Ferrite Bead | – | – | – | – | – | – | – | Impedance @ 100 MHz300 Ω | Maximum Impedance450 Ω | Maximum Impedance250 MHz | Rated Current 22000 mA | DC Resistance0.15 Ω | TypeHigh Current | – | Number of windings1 | – | Rated Current2000 mA | DC Resistance [1]0.15 Ω | – | – | – | – | – | Operating Temperature -55 °C up to +125 °C | – | MountSMT | – | – | ||||
 | WE-SL5 SMT Common Mode Line Filter, –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-SL5 SMT Common Mode Line Filter | – | – | – | – | – | – | – | Impedance @ 100 MHz800 Ω | Maximum Impedance1200 Ω | Maximum Impedance20 MHz | – | DC Resistance0.035 Ω | – | Winding Stylesectional | Number of windings2 | Inductance [1]250 µH | Rated Current2000 mA | DC Resistance [1]0.035 Ω | Rated Voltage80 V | – | – | – | – | Operating Temperature -40 °C up to +125 °C | Insulation Test Voltage1000 V (AC) | MountSMT | Inductance250 µH | Leakage Inductance [min.]1500 nH | ||||
 | WE-LAN LAN Transformer, –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-LAN LAN Transformer | – | – | – | – | – | – | – | – | – | – | – | – | Type4PPoE (to 900 mA) | – | – | Inductance [1]350 µH | – | – | – | Data rate10/100/1000BASE-T | Ports1 | PoE4PPoE (up to 1000 mA) | Improved Common Mode RejectionNo | Operating Temperature -40 °C up to +105 °C | Insulation Test Voltage1500 V (AC) | MountSMT | Inductance350 µH | – |