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Analog Devices LTC9105 | Demoboard EVAL-LTC9105-AZ
EVAL-LTC9105-AZ: LTC9105, MAX5974C, LT4321, and ADuM1252 IEEE 802.3bt Powered Device with I2C Telemetry
Details
| Topologie | LAN / POE |
| Eingangsspannung | 55 V |
Beschreibung
The EVAL-LTC9105-AZ is an IEEE 802.3bt-compliant Type 3, Class 6 Power over Ethernet (PoE) powered device (PD) with port telemetry via I2C. The evaluation board features the LTC9105 PD interface controller, MAX5974C switching regulator controller, the LT4321 PoE ideal diode bridge controller, and the ADuM1252 I2C isolator.The LTC9105 provides IEEE 802.3af-, IEEE 802.3at-, and IEEE 802.3bt-compliant interfacing with port voltage and current telemetry via I2C. It utilizes an external, low channel resistance, RDS(ON) (34mΩ typical), N-channel, hot-swap metal-oxide semiconductor, field-effect transistor (MOSFET), and 50mΩ sense resistor. Automatic maintain power signature (MPS) keeps the port connected when the current drops to a low level.The MAX5974C controls a DC/DC converter utilizing a highly efficient active-clamp forward converter topology with synchronous rectification and provides an isolated 5V/9.2A output. The LT4321 controls eight low RDS(ON) (57mΩ typical), N-channel MOSFETs to further improve end-to-end power delivery efficiency and ease thermal design. The ADuM1252 isolates I2C data between the LTC9105 and a host controller on a nonisolated ground domain.The EVAL-LTC9105-AZ is configured as a Class 6 PD and accepts up to 51W of delivered power from a power sourcing equipment (PSE) via its RJ45 connector (J1). The EVAL-LTC9105-AZ can be powered by a local 55V DC power supply using the auxiliary supply input terminals. With the DC590B I2C interface board connected to the EVAL-LTC9105-AZ, the EVAL-LTC9105-AZ graphical user interface (GUI) displays port telemetry and configuration options.
Eigenschaften
IEEE 802.3bt Powered Device (PD) Controller400kHz I2C InterfaceContinuous Voltage, Current, and Power TelemetryDedicated 14-Bit Delta-Sigma Current and Voltage ADCsAutomatic Maintain Power Signature (MPS)Supports Up to 90W PDs with Extended Power5-Event Classification Sensing with PSE Allocated Power ReadbackSeamless Switchover between Dual PD or PD/AUX InputsSuperior Surge Robustness (100V Absolute Maximum)Wide Junction Temperature Range (-40⁰C to 125⁰C)External Hot Swap N-Channel MOSFET for Lowest Power Dissipation and Highest System Efficiency50mΩ Current Sense ResistorAuxiliary Input Sense with Standby Modes20-Pin 5mm x 5mm QFN Package
Typische Anwendungen
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | C | Tol. C | VR(V (DC)) | DF(%) | RISO | Keramiktyp | L(mm) | B(mm) | H(mm) | Fl(mm) | Verpackung | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | Z @ 100 MHz(Ω) | Zmax(Ω) | Testbedingung Zmax | IR 2(mA) | RDC max.(Ω) | Typ | Version | Vin | VOut1(V) | IOut1(A) | VOut2(V) | IOut2(A) | Vaux(V) | L1(µH) | n | VT(V (AC)) | Bauform | IR 1(mA) | Qmin. | RDC1 max.(Ω) | Datenrate | Ports | PoE | Improved CMRR | Betriebstemperatur | Montageart | L(µH) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| WCAP-CSGP MLCCs 25 V(DC), 100 nF, ±10% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 25 V(DC) | Kapazität100 nF | Kapazität±10% | Nennspannung25 V (DC) | Verlustfaktor10 % | Isolationswiderstand5 GΩ | KeramiktypX7R Klasse II | Länge1 mm | Breite0.5 mm | Höhe0.5 mm | Pad Dimension0.25 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | Bauform0402 | – | Güte [1]600 | – | – | – | – | – | Betriebstemperatur -55 °C up to +125 °C | – | – | |||||
 | WE-CBF SMT-Ferrit, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-CBF SMT-Ferrit | – | – | – | – | – | – | Länge2 mm | Breite1.2 mm | Höhe0.0009 mm | Pad Dimension0.5 mm | – | – | – | – | – | – | – | Impedanz @ 100 MHz600 Ω | Maximale Impedanz700 Ω | Maximale Impedanz150 MHz | Nennstrom 22000 mA | Gleichstromwiderstand0.15 Ω | TypHochstrom | VersionSMT | – | – | – | – | – | – | – | – | – | Bauform0805 | Nennstrom [1]2000 mA | – | Gleichstromwiderstand [1]0.15 Ω | – | – | – | – | Betriebstemperatur -55 °C up to +125 °C | MontageartSMT | – | ||||
 | WE-HCI SMT-Hochstrominduktivität, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | – | – | – | – | – | – | Länge5.5 mm | Breite5.3 mm | Höhe4 mm | – | – | Performance Nennstrom6 A | Sättigungsstrom 12.5 A | Sättigungsstrom @ 30%4.7 A | Gleichstromwiderstand24.5 mΩ | Eigenresonanzfrequenz57 MHz | MaterialSuperflux | – | – | – | – | Gleichstromwiderstand0.02695 Ω | – | VersionSMT | – | – | – | – | – | – | – | – | – | Bauform5040 | – | – | – | – | – | – | – | Betriebstemperatur -40 °C up to +150 °C | MontageartSMT | Induktivität4.7 µH | ||||
 | WE-PoEH Übertrager für Power over Ethernet High Power, –, – | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | – | – | – | – | – | – | Länge14 mm | Breite17.65 mm | Höhe14.5 mm | – | – | – | – | – | – | – | – | – | – | – | – | – | – | VersionForward | Input Voltage 33 - 57 V (DC) | Ausgangsspannung 15 V | Ausgangsstrom 17 A | Ausgangsspannung 25 V | Ausgangsstrom 27 A | Hilfsspannung10 V | – | Übersetzungsverhältnis4:1:1:2 | Prüfspannung1500 V (AC) | BauformEPQ13 | – | – | – | – | – | – | – | Betriebstemperatur -40 °C up to +125 °C | MontageartSMT | Induktivität100 µH | ||||
 | WE-LAN LAN Übertrager, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LAN LAN Übertrager | – | – | – | – | – | – | Länge17.55 mm | Breite16 mm | Höhe98.8 mm | Pad Dimension13.97 mm | – | – | – | – | – | – | – | – | – | – | – | – | Typ4PPoE (to 900 mA) | VersionSMT | – | – | – | – | – | – | Induktivität [1]350 µH | Übersetzungsverhältnis1:1 | Prüfspannung1500 V (AC) | – | – | – | – | Datenrate10/100/1000BASE-T | Ports1 | PoE4PPoE (bis zu 1000 mA) | Verbesserte Common Mode EntstörungNein | Betriebstemperatur -40 °C up to +105 °C | MontageartSMT | Induktivität350 µH |