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Analog Devices LTC9105 | Demoboard EVAL-LTC9105-AZ
EVAL-LTC9105-AZ: LTC9105, MAX5974C, LT4321, and ADuM1252 IEEE 802.3bt Powered Device with I2C Telemetry
Overview
| Topology | LAN / POE |
| Input voltage | 55 V |
Description
The EVAL-LTC9105-AZ is an IEEE 802.3bt-compliant Type 3, Class 6 Power over Ethernet (PoE) powered device (PD) with port telemetry via I2C. The evaluation board features the LTC9105 PD interface controller, MAX5974C switching regulator controller, the LT4321 PoE ideal diode bridge controller, and the ADuM1252 I2C isolator.The LTC9105 provides IEEE 802.3af-, IEEE 802.3at-, and IEEE 802.3bt-compliant interfacing with port voltage and current telemetry via I2C. It utilizes an external, low channel resistance, RDS(ON) (34mΩ typical), N-channel, hot-swap metal-oxide semiconductor, field-effect transistor (MOSFET), and 50mΩ sense resistor. Automatic maintain power signature (MPS) keeps the port connected when the current drops to a low level.The MAX5974C controls a DC/DC converter utilizing a highly efficient active-clamp forward converter topology with synchronous rectification and provides an isolated 5V/9.2A output. The LT4321 controls eight low RDS(ON) (57mΩ typical), N-channel MOSFETs to further improve end-to-end power delivery efficiency and ease thermal design. The ADuM1252 isolates I2C data between the LTC9105 and a host controller on a nonisolated ground domain.The EVAL-LTC9105-AZ is configured as a Class 6 PD and accepts up to 51W of delivered power from a power sourcing equipment (PSE) via its RJ45 connector (J1). The EVAL-LTC9105-AZ can be powered by a local 55V DC power supply using the auxiliary supply input terminals. With the DC590B I2C interface board connected to the EVAL-LTC9105-AZ, the EVAL-LTC9105-AZ graphical user interface (GUI) displays port telemetry and configuration options.
Features
IEEE 802.3bt Powered Device (PD) Controller400kHz I2C InterfaceContinuous Voltage, Current, and Power TelemetryDedicated 14-Bit Delta-Sigma Current and Voltage ADCsAutomatic Maintain Power Signature (MPS)Supports Up to 90W PDs with Extended Power5-Event Classification Sensing with PSE Allocated Power ReadbackSeamless Switchover between Dual PD or PD/AUX InputsSuperior Surge Robustness (100V Absolute Maximum)Wide Junction Temperature Range (-40⁰C to 125⁰C)External Hot Swap N-Channel MOSFET for Lowest Power Dissipation and Highest System Efficiency50mΩ Current Sense ResistorAuxiliary Input Sense with Standby Modes20-Pin 5mm x 5mm QFN Package
Typical applications
More information
Products
Order Code | Datasheet | Simulation | Downloads | Status | Product series | C | Tol. C | VR(V (DC)) | DF(%) | RISO | Ceramic Type | L(mm) | W(mm) | H(mm) | Fl(mm) | Packaging | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | Z @ 100 MHz(Ω) | Zmax(Ω) | Test Condition Zmax | IR 2(mA) | RDC max.(Ω) | Type | Version | VIN | VOut1(V) | IOut1(A) | VOut2(V) | IOut2(A) | Vaux(V) | L1(µH) | n | VT(V (AC)) | Size | IR(mA) | Qmin. | RDC max.(Ω) | Data rate | Ports | PoE | Improved CMRR | Operating Temperature | Mount | L(µH) | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| WCAP-CSGP MLCCs 25 V(DC), 100 nF, ±10% | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWCAP-CSGP MLCCs 25 V(DC) | Capacitance100 nF | Capacitance±10% | Rated Voltage25 V (DC) | Dissipation Factor10 % | Insulation Resistance5 GΩ | Ceramic TypeX7R Class II | Length1 mm | Width0.5 mm | Height0.5 mm | Pad Dimension0.25 mm | Packaging7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | Size0402 | – | Q-Factor [1]600 | – | – | – | – | – | Operating Temperature -55 °C up to +125 °C | – | – | |||||
 | WE-CBF SMT EMI Suppression Ferrite Bead, –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-CBF SMT EMI Suppression Ferrite Bead | – | – | – | – | – | – | Length2 mm | Width1.2 mm | Height0.0009 mm | Pad Dimension0.5 mm | – | – | – | – | – | – | – | Impedance @ 100 MHz600 Ω | Maximum Impedance700 Ω | Maximum Impedance150 MHz | Rated Current 22000 mA | DC Resistance0.15 Ω | TypeHigh Current | VersionSMT | – | – | – | – | – | – | – | – | – | Size0805 | Rated Current2000 mA | – | DC Resistance [1]0.15 Ω | – | – | – | – | Operating Temperature -55 °C up to +125 °C | MountSMT | – | ||||
 | WE-HCI SMT Flat Wire High Current Inductor, –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-HCI SMT Flat Wire High Current Inductor | – | – | – | – | – | – | Length5.5 mm | Width5.3 mm | Height4 mm | – | – | Performance Rated Current6 A | Saturation Current @ 10%2.5 A | Saturation Current @ 30%4.7 A | DC Resistance24.5 mΩ | Self Resonant Frequency57 MHz | MaterialSuperflux | – | – | – | – | DC Resistance0.02695 Ω | – | VersionSMT | – | – | – | – | – | – | – | – | – | Size5040 | – | – | – | – | – | – | – | Operating Temperature -40 °C up to +150 °C | MountSMT | Inductance4.7 µH | ||||
 | WE-PoEH Power over Ethernet High Power Transformer, –, – | Simulation– | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-PoEH Power over Ethernet High Power Transformer | – | – | – | – | – | – | Length14 mm | Width17.65 mm | Height14.5 mm | – | – | – | – | – | – | – | – | – | – | – | – | – | – | VersionForward | Input Voltage 33 - 57 V (DC) | Output Voltage 15 V | Output Current 17 A | Output Voltage 25 V | Output Current 27 A | Auxiliary Voltage10 V | – | Turns Ratio4:1:1:2 | Insulation Test Voltage1500 V (AC) | SizeEPQ13 | – | – | – | – | – | – | – | Operating Temperature -40 °C up to +125 °C | MountSMT | Inductance100 µH | |||
 | WE-LAN LAN Transformer, –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-LAN LAN Transformer | – | – | – | – | – | – | Length17.55 mm | Width16 mm | Height98.8 mm | Pad Dimension13.97 mm | – | – | – | – | – | – | – | – | – | – | – | – | Type4PPoE (to 900 mA) | VersionSMT | – | – | – | – | – | – | Inductance [1]350 µH | Turns Ratio1:1 | Insulation Test Voltage1500 V (AC) | – | – | – | – | Data rate10/100/1000BASE-T | Ports1 | PoE4PPoE (up to 1000 mA) | Improved Common Mode RejectionNo | Operating Temperature -40 °C up to +105 °C | MountSMT | Inductance350 µH |