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Analog Devices LTC7890 | Demoboard EVAL-LTC7890-AZ
High Frequency, Dual Output, Step-Down Supply with EPC GaN FETs
Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 14-72 V |
| Schaltfrequenz | 100-3000 kHz |
| Ausgang 1 | 12 V / 20 A |
| Ausgang 2 | 5 V / 20 A |
| IC-Revision | A |
Beschreibung
Evaluation circuit EVAL-LTC7890-AZ is a dual output synchronous step-down converter that drives all N-channel gallium nitride (GaN) field effect transistors (FETs). The EVAL-LTC7890-AZ evaluation board features EPC2218 100V FETs from EPC.EVAL-LTC7890-AZ features the LTC®7890: a low quiescent current high frequency (programmable fixed frequency from 100kHz up to 3MHz) dual step-down DC/DC synchronous controller, with a dedicated driver feature for GaN FETs housed in a small 6mm × 6mm QFN package.
Eigenschaften
- GaN drive technology fully optimized for GaN FETs
- Wide VIN range: 4 V to 100 V
- Wide output voltage range: 0.8 V ≤ VOUT ≤ 60 V
- No catch, clamp, or bootstrap diodes needed
- Internal smart bootstrap switches prevent overcharging of high-side driver supplies
- Internally optimized, smart near zero dead times or resistor adjustable dead times
- Split output gate drivers for adjustable turn on and turn off driver strengths
- Accurate adjustable driver voltage and UVLO
- Low IQ: 5 μA (48 VIN to 5 VOUT, Ch 1 On)
- Programmable frequency (100 kHz to 3 MHz)
- Synchronizable frequency (100 kHz to 3 MHz)
- Spread spectrum frequency modulation
- 40-lead (6 mm × 6 mm), side wettable, QFN package
Typische Anwendungen
- Cabin Experience and Infotainment Solutions; Rear Seat Entertainment and Cluster Display Solutions
- Data Center Solutions ; Server Equipment
- Industrial power systems
- Medical Systems
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC max.(mΩ) | fres(MHz) | Drahttype | Ti | Ø OD(mm) | Ø ID(mm) | Verpackung | VPE | Pins | Typ | Montageart | L(mm) | H(mm) | IR(A) | Arbeitsspannung(V (AC)) | Betriebstemperatur | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCF SMT-Hochstrominduktivität, 2 µH, 50.3 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCF SMT-Hochstrominduktivität | Induktivität2 µH | Performance Nennstrom50.3 A | Sättigungsstrom 125.5 A | Sättigungsstrom @ 30%30 A | Gleichstromwiderstand0.92 mΩ | Eigenresonanzfrequenz30 MHz | DrahttypeFlach | – | – | – | – | – | – | – | MontageartSMT | Länge19.8 mm | Höhe10 mm | Nennstrom50.3 A | – | Betriebstemperatur -40 °C up to +125 °C | ||||
 | WA-SMSI SMT Stahl Spacer mit Innengewinde M2, –, – | Simulation– | Downloads6 Dateien | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWA-SMSI SMT Stahl Spacer mit Innengewinde M2 | – | – | – | – | – | – | – | InnengewindeM2 | Außendurchmesser4.35 mm | Innendurchmesser2.8 mm | VerpackungTape and Reel | Verpackungseinheit1500 | – | – | – | Länge1 mm | – | – | – | Betriebstemperatur -55 °C up to +150 °C | ||
 | WR-PHD Kurzschlussbrücken, –, – | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWR-PHD Kurzschlussbrücken | – | – | – | – | – | – | – | – | – | – | VerpackungBeutel | Verpackungseinheit1000 | Pins2 | – | – | – | – | Nennstrom3 A | Arbeitsspannung200 V (AC) | Betriebstemperatur -25 °C up to +105 °C | |||
 | WR-PHD Stiftleisten, –, – | Simulation– | Downloads7 Dateien | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWR-PHD Stiftleisten | – | – | – | – | – | – | – | – | – | – | VerpackungBeutel | Verpackungseinheit1000 | Pins6 | TypGerade | MontageartTHT | Länge6 mm | – | Nennstrom2 A | Arbeitsspannung200 V (AC) | Betriebstemperatur -40 °C up to +105 °C |