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Analog Devices LTC7890 | Demoboard EVAL-LTC7890-AZ
High Frequency, Dual Output, Step-Down Supply with EPC GaN FETs
Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 14-72 V |
| Schaltfrequenz | 500-600 kHz |
| Ausgang 1 | 12 V / 20 A |
| Ausgang 2 | 5 V / 20 A |
Beschreibung
Evaluation circuit EVAL-LTC7890-AZ is a dual output synchronous step-down converter that drives all N-channel gallium nitride (GaN) field effect transistors (FETs). The EVAL-LTC7890-AZ evaluation board features EPC2218 100V FETs from EPC.EVAL-LTC7890-AZ features the LTC®7890: a low quiescent current high frequency (programmable fixed frequency from 100kHz up to 3MHz) dual step-down DC/DC synchronous controller, with a dedicated driver feature for GaN FETs housed in a small 6mm × 6mm QFN package.
Eigenschaften
- GaN drive technology fully optimized for GaN FETs
- Wide VIN range: 4 V to 100 V
- Wide output voltage range: 0.8 V ≤ VOUT ≤ 60 V
- No catch, clamp, or bootstrap diodes needed
- Internal smart bootstrap switches prevent overcharging of high-side driver supplies
- Internally optimized, smart near zero dead times or resistor adjustable dead times
- Split output gate drivers for adjustable turn on and turn off driver strengths
- Accurate adjustable driver voltage and UVLO
- Low IQ: 5 μA (48 VIN to 5 VOUT, Ch 1 On)
- Programmable frequency (100 kHz to 3 MHz)
- Synchronizable frequency (100 kHz to 3 MHz)
- Spread spectrum frequency modulation
- 40-lead (6 mm × 6 mm), side wettable, QFN package
Typische Anwendungen
- Cabin Experience and Infotainment Solutions; Rear Seat Entertainment and Cluster Display Solutions
- Data Center Solutions ; Server Equipment
- Industrial power systems
- Medical Systems
Weiterführende Informationen
Artikeldaten
| Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L (µH) | IRP,40K (A) | ISAT,10% (A) | ISAT,30% (A) | RDC max. (mΩ) | fres (MHz) | Drahttype | L (mm) | Ti | Ø OD (mm) | Ø ID (mm) | VPE | Pins (pcs) | Reihen | H (mm) | Gender | Typ | IR (A) | Verpackung | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 7443642010200 | SPEC | 10 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-HCF SMT-Hochstrominduktivität | 2 | 50.3 | 25.5 | 30 | 0.92 | 30 | Flach | 19.8 | – | – | – | – | – | – | 10 | – | – | 50.3 | – | ||
 | 9774010243R | SPEC Anstehende PCNAufgrund einer anstehenden PCN wird in Kürze eine Änderung am Bauteil durchgeführt. Anbei finden Sie die entsprechende PCN. Bei weiteren Fragen wenden Sie sich bitte an Ihren Vertriebsmitarbeiter. | – | 6 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WA-SMSI SMT Stahl Spacer mit Innengewinde M2 | – | – | – | – | – | – | – | 1 | M2 | 4.35 | 2.8 | 1500 | – | – | – | – | – | – | Tape and Reel | |
 | 60800213421 | SPEC | – | 3 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WR-PHD 2.00 mm Jumper with Test Point | – | – | – | – | – | – | – | – | – | – | – | 1000 | 2 | – | – | Jumper | – | 3 | Beutel | |
 | 62000621121 | SPEC | – | 7 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WR-PHD 2.00 mm THT Dual Pin Header | – | – | – | – | – | – | – | 6 | – | – | – | 1000 | 6 | Dual | – | Pin Header | Gerade | 2 | Beutel |
| Artikel Nr. | Datenblatt | Simulation | |
|---|---|---|---|
| 7443642010200 | SPEC | |
| 9774010243R | SPEC Anstehende PCNAufgrund einer anstehenden PCN wird in Kürze eine Änderung am Bauteil durchgeführt. Anbei finden Sie die entsprechende PCN. Bei weiteren Fragen wenden Sie sich bitte an Ihren Vertriebsmitarbeiter. | – |
| 60800213421 | SPEC | – |
| 62000621121 | SPEC | – |
| Muster |
|---|
| Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L (µH) | IRP,40K (A) | ISAT,10% (A) | ISAT,30% (A) | RDC max. (mΩ) | fres (MHz) | Drahttype | L (mm) | Ti | Ø OD (mm) | Ø ID (mm) | VPE | Pins (pcs) | Reihen | H (mm) | Gender | Typ | IR (A) | Verpackung | Muster |
|---|
