IC-Hersteller Analog Devices

IC-Hersteller (98)

Analog Devices LTC7890 | Demoboard EVAL-LTC7890-AZ

High Frequency, Dual Output, Step-Down Supply with EPC GaN FETs

Details

TopologieAbwärtswandler
Eingangsspannung14-72 V
Schaltfrequenz500-600 kHz
Ausgang 112 V / 20 A
Ausgang 25 V / 20 A

Beschreibung

Evaluation circuit EVAL-LTC7890-AZ is a dual output synchronous step-down converter that drives all N-channel gallium nitride (GaN) field effect transistors (FETs). The EVAL-LTC7890-AZ evaluation board features EPC2218 100V FETs from EPC.EVAL-LTC7890-AZ features the LTC®7890: a low quiescent current high frequency (programmable fixed frequency from 100kHz up to 3MHz) dual step-down DC/DC synchronous controller, with a dedicated driver feature for GaN FETs housed in a small 6mm × 6mm QFN package.

Eigenschaften

  • GaN drive technology fully optimized for GaN FETs
  • Wide VIN range: 4 V to 100 V
  • Wide output voltage range: 0.8 V ≤ VOUT ≤ 60 V
  • No catch, clamp, or bootstrap diodes needed
  • Internal smart bootstrap switches prevent overcharging of high-side driver supplies
  • Internally optimized, smart near zero dead times or resistor adjustable dead times
  • Split output gate drivers for adjustable turn on and turn off driver strengths
  • Accurate adjustable driver voltage and UVLO
  • Low IQ: 5 μA (48 VIN to 5 VOUT, Ch 1 On)
  • Programmable frequency (100 kHz to 3 MHz)
  • Synchronizable frequency (100 kHz to 3 MHz)
  • Spread spectrum frequency modulation
  • 40-lead (6 mm × 6 mm), side wettable, QFN package

Typische Anwendungen

  • Cabin Experience and Infotainment Solutions; Rear Seat Entertainment and Cluster Display Solutions
  • Data Center Solutions ; Server Equipment
  • Industrial power systems
  • Medical Systems

Weiterführende Informationen

Artikeldaten

Artikel Nr. Daten­blatt Simu­lation Downloads Status ProduktserieL
(µH)
IRP,40K
(A)
ISAT,10%
(A)
ISAT,30%
(A)
RDC max.
(mΩ)
fres
(MHz)
Drahttype Muster
7443642010200SPEC
9 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WE-HCF SMT-Hochstrominduktivität 2 50.3 25.5 30 0.92 30 Flach
Artikel Nr. Daten­blatt Simu­lation
7443642010200SPEC
Muster
Artikel Nr. Daten­blatt Simu­lation Downloads Status ProduktserieL
(µH)
IRP,40K
(A)
ISAT,10%
(A)
ISAT,30%
(A)
RDC max.
(mΩ)
fres
(MHz)
Drahttype Muster