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Analog Devices ADIN1100D2Z | Demoboard DEMO-ADIN1100D2Z
10BASE-T to 10BASE-T1L Media Converter Including SPoE/APL, Featuring ADIN1100 and ADIN1200 Ethernet PHYs and LTC4296-1 PSE Controller
Details
| Topologie | Sonstige Topologie |
Beschreibung
The DEMO-ADIN1100D2Z is a media converter board that provides connection between a standard 10BASE-T RJ45 Ethernet port and a 10BASE-T1L device.The DEMO-ADIN1100D2Z includes a power sourcing equipment (PSE) controller and it can power the connected 10BASE-T1L or advanced physical layer (APL) device. The PSE controller is configurable for power over data line (PoDL)/single pair power over Ethernet (SPoE) power Class 10, Class 11, Class 12, Class 13, Class 14, and Class 15, and APL power Class A, Class C, and Class 3.The board requires an external DC power supply with output voltage and maximum output current relevant to the selected power class. For a subset of power classes (Class 10, APL A, and APL C), the board can also be powered from a USB host.The board requires a minor modification and external power coupling inductors when used for the highest power Class 15 and APL 3.The DEMO-ADIN1100D2Z can be used as an autonomous device, configurable by a set of switches and jumpers, indicating its status on LEDs.The DEMO-ADIN1100D2Z can also be connected via USB to a host PC. The 10BASE-T1L link status, power status, and diagnostics are then accessible using a simple set of text commands and messages exchanged over the USB COM port interface using a serial terminal software on a PC.
Eigenschaften
- 10BASE-T to 10BASE-T1L media converter
- SPoE PSE controller compatible with IEEE 802.3cg
- Power source for APL devices
- System level diagnostics over USB COM port
Typische Anwendungen
- Factory Automation, Building Automation, Process Control, Process Control
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | Datenrate | PoE | Ports | Tab | Improved CMRR | Betriebstemperatur | LED | PHY-Chipmodus | Montageart | USB | Shield Tabs | ISAT(A) | VT(V (DC)) | Version | Z @ 100 MHz(Ω) | Zmax(Ω) | Testbedingung Zmax | IR 2(mA) | RDC max.(Ω) | Typ | Wicklungstyp | Wicklungsanzahl | L(µH) | IR(mA) | VR(V) | Kanäle | Polarität | VCh max.(V) | ICh Leak max.(µA) | VBR min.(V) | CCh typ.(pF) | IPeak(A) | VCh Clamp ESD typ.(V) | VESD Contact(kV) | L1(µH) | L2(µH) | IR 1(mA) | ISAT 1(A) | RDC1 typ(Ω) | RDC2 typ(Ω) | RDC1 max(Ω) | RDC2 max(Ω) | fres(MHz) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-RJ45 LAN Through Hole Reflow, 100BASE-TX, PoE+ | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-RJ45 LAN Through Hole Reflow | Datenrate100BASE-TX | PoEPoE+ | Ports1x1 | Tab PositionOben | Verbesserte Common Mode EntstörungNein | Betriebstemperatur -40 °C up to +85 °C | LED (Links-Rechts)grün/gelb-grün/gelb | PHY-Chipmoduscurrent | MontageartTHR | USBNein | Shield TabsNein | – | Prüfspannung2250 V (DC) | – | – | – | – | – | – | – | – | – | Induktivität350 µH | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | ||||
 | WE-CBF SMT-Ferrit, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-CBF SMT-Ferrit | – | – | – | – | – | Betriebstemperatur -55 °C up to +125 °C | – | – | MontageartSMT | – | – | – | – | VersionSMT | Impedanz @ 100 MHz1000 Ω | Maximale Impedanz1050 Ω | Maximale Impedanz120 MHz | Nennstrom 2830 mA | Gleichstromwiderstand0.3 Ω | TypBreitband | – | Wicklungsanzahl1 | – | Nennstrom600 mA | – | – | – | – | – | – | – | – | – | – | – | – | Nennstrom 1600 mA | – | – | – | – | – | – | ||||
 | WE-SL2 Stromkompensierter SMT Line Filter, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-SL2 Stromkompensierter SMT Line Filter | – | – | – | – | – | Betriebstemperatur -40 °C up to +125 °C | – | – | MontageartSMT | – | – | – | Prüfspannung500 V (DC) | VersionSMT | – | Maximale Impedanz3300 Ω | – | – | Gleichstromwiderstand0.15 Ω | – | Wicklungstypbifilar | Wicklungsanzahl2 | Induktivität500 µH | Nennstrom1000 mA | Nennspannung80 V | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | ||||
 | WE-TVS TVS Diode – High Speed Series, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-TVS TVS Diode – High Speed Series | – | – | – | – | – | Betriebstemperatur -55 °C up to +125 °C | – | – | MontageartSMT | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | Kanäle4+1 | PolaritätUnidirectional | Kanal Betriebsspannung [max.]5 V | Kanal (Rück) Leckstrom [max.]1 µA | (Rückwärts-) Durchbruchspannung [min.]6.1 V | (Kanal) Eingangskapazität [typ.]1 pF | (Reverse) Peak Pulse Current12 A | Kanal ESD Klemmspannung [typ.]13 V | ESD Kontact-Entladungsfähigkeit12 kV | – | – | – | – | – | – | – | – | – | ||||
 | WE-SPC SMT-Speicherdrossel, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-SPC SMT-Speicherdrossel | – | – | – | – | – | Betriebstemperatur -40 °C up to +125 °C | – | – | MontageartSMT | – | – | Sättigungsstrom1.1 A | – | VersionSMT | – | – | – | – | Gleichstromwiderstand0.5 Ω | – | – | Wicklungsanzahl35.5 | Induktivität33 µH | Nennstrom750 mA | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | Eigenresonanzfrequenz12 MHz | ||||
 | WE-SPC SMT-Speicherdrossel, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-SPC SMT-Speicherdrossel | – | – | – | – | – | Betriebstemperatur -40 °C up to +125 °C | – | – | MontageartSMT | – | – | Sättigungsstrom2.1 A | – | VersionSMT | – | – | – | – | Gleichstromwiderstand0.094 Ω | – | – | Wicklungsanzahl21.5 | Induktivität10 µH | Nennstrom1650 mA | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | Eigenresonanzfrequenz28 MHz | ||||
 | WE-DD SMT-Doppeldrossel, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-DD SMT-Doppeldrossel | – | – | – | – | – | Betriebstemperatur -40 °C up to +125 °C | – | – | – | – | – | Sättigungsstrom3.9 A | – | – | – | – | – | Nennstrom 22250 mA | Gleichstromwiderstand0.105 Ω | TypGerade | – | – | Induktivität33 µH | Nennstrom2250 mA | – | – | – | – | – | – | – | – | – | – | Induktivität 133 µH | Induktivität 233 µH | Nennstrom 12250 mA | Sättigungsstrom [1]3.9 A | Gleichstromwiderstand 10.087 Ω | Gleichstromwiderstand 20.087 Ω | Gleichstromwiderstand 10.105 Ω | Gleichstromwiderstand 20.105 Ω | Eigenresonanzfrequenz8.9 MHz | ||||
| WE-DD SMT-Doppeldrossel, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-DD SMT-Doppeldrossel | – | – | – | – | – | Betriebstemperatur -40 °C up to +125 °C | – | – | – | – | – | Sättigungsstrom1.4 A | – | – | – | – | – | Nennstrom 2900 mA | Gleichstromwiderstand0.65 Ω | TypGekreuzt | – | – | Induktivität220 µH | Nennstrom900 mA | – | – | – | – | – | – | – | – | – | – | Induktivität 1220 µH | Induktivität 2220 µH | Nennstrom 1900 mA | Sättigungsstrom [1]1.4 A | Gleichstromwiderstand 10.53 Ω | Gleichstromwiderstand 20.53 Ω | Gleichstromwiderstand 10.65 Ω | Gleichstromwiderstand 20.65 Ω | Eigenresonanzfrequenz2 MHz |