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Texas Instruments AMC1311 | Demoboard TIDA-010039_HV_Card
2-V input, reinforced isolated amplifier with high CMTI for voltage sensing
Overview
| Topology | Other Topology |
| Input voltage | 380-400 V |
| Output 1 | 800 V / 12.5 A |
| IC revision | E3 |
Description
This reference design provides an overview on how to implement a three-level, three-phase, SiC-based AC/DC converter with bi-directional functionality. A high switching frequency of 50 kHz reduces the size of magnetics for the filter design and as a result a higher power density. SiC MOSFETs with switching loss enable higher DC bus voltages of up to 800V and lower switching losses with a peak efficiency of >97%. This design is configurable to work as a two-level or three-level rectifier.
Features
- Rated nominal input of 380–400 VAC peak, withDC output of 800 V
- Maximum 10-kW, 10-kVA output power at 400-VAC50- or 60-Hz grid connection
- High-voltage (1200 V) SiC MOSFET-based fullbridge AC/DC converter for peak efficiency of
97%
- Compact filter by switching rectifier at 50 kHz
- Isolated driver ISO5852S with reinforced isolationfor driving high-voltage SiC MOSFET andUCC5320S for driving middle Si IGBT
- Isolated current sensing using the AMC1301 forload current monitoring
- TMS320F28379D control card for digital control
Typical applications
- DC Charging (Pile) Station, EV Charging Station Power Module, Energy Storage Power Conversion System (PCS), Three Phase UPS
More information
Products
Order Code | Datasheet | Simulation | Downloads | Status | Product series | λDom typ.(nm) | Emitting Color | λPeak typ.(nm) | IV typ.(mcd) | VF typ.(V) | Chip Technology | 2θ50% typ.(°) | C | Tol. C | VR(V (DC)) | Size | Operating Temperature | DF(%) | RISO | Ceramic Type | L(mm) | W(mm) | Fl(mm) | Packaging | VIN | VOut1(V (DC)) | IOut1(A) | Type of Insulation | fswitch(kHz) | ∫Udt(Vµs) | NPRI : NSEC | L(µH) | VT(V (RMS)) | Mount | Pins | Working Voltage(V (AC)) | Z @ 100 MHz(Ω) | Zmax(Ω) | Test Condition Zmax | IR 2(mA) | RDC max.(Ω) | Type | IR(mA) | Z @ 1 GHz(Ω) | H(mm) | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WL-SMCD SMT Mono-color Chip LED Diffused, 573 nm, Bright Green | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWL-SMCD SMT Mono-color Chip LED Diffused | Dominant Wavelength [typ.]573 nm | Emitting ColorBright Green | Peak Wavelength [typ.]575 nm | Luminous Intensity [typ.]60 mcd | Forward Voltage [typ.]2 V | Chip TechnologyAlInGaP | Viewing Angle Phi 0° [typ.]140 ° | – | – | – | Size0603 | Operating Temperature -40 °C up to +85 °C | – | – | – | Length1.6 mm | Width0.8 mm | – | PackagingTape and Reel | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | Height0.4 mm | ||||
 | WE-CBF SMT EMI Suppression Ferrite Bead, –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-CBF SMT EMI Suppression Ferrite Bead | – | – | – | – | – | – | – | – | – | – | Size0603 | Operating Temperature -55 °C up to +125 °C | – | – | – | Length1.6 mm | Width0.8 mm | Pad Dimension0.3 mm | – | – | – | – | – | – | – | – | – | – | MountSMT | – | – | Impedance @ 100 MHz1000 Ω | Maximum Impedance1050 Ω | Maximum Impedance120 MHz | Rated Current 2830 mA | DC Resistance0.3 Ω | TypeWide Band | Rated Current600 mA | Impedance @ 1 GHz186 Ω | Height0.8 mm | ||||
 | WE-MPSB EMI Multilayer Power Suppression Bead, –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MPSB EMI Multilayer Power Suppression Bead | – | – | – | – | – | – | – | – | – | – | Size0603 | Operating Temperature -55 °C up to +125 °C | – | – | – | Length1.6 mm | Width0.8 mm | Pad Dimension0.3 mm | – | – | – | – | – | – | – | – | – | – | MountSMT | – | – | Impedance @ 100 MHz26 Ω | Maximum Impedance39 Ω | Maximum Impedance515 MHz | Rated Current 26500 mA | DC Resistance0.008 Ω | TypeHigh Current | Rated Current6500 mA | Impedance @ 1 GHz33 Ω | Height0.8 mm | ||||
| WCAP-CSGP MLCCs 16 V(DC), –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWCAP-CSGP MLCCs 16 V(DC) | – | – | – | – | – | – | – | Capacitance10 nF | Capacitance±10% | Rated Voltage16 V (DC) | Size0603 | Operating Temperature -55 °C up to +125 °C | Dissipation Factor3.5 % | Insulation Resistance10 GΩ | Ceramic TypeX7R Class II | Length1.6 mm | Width0.8 mm | Pad Dimension0.4 mm | Packaging7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | Height0.8 mm | |||||
| WCAP-CSGP MLCCs 50 V(DC), –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWCAP-CSGP MLCCs 50 V(DC) | – | – | – | – | – | – | – | Capacitance100 nF | Capacitance±10% | Rated Voltage50 V (DC) | Size0603 | Operating Temperature -55 °C up to +125 °C | Dissipation Factor3 % | Insulation Resistance5 GΩ | Ceramic TypeX7R Class II | Length1.6 mm | Width0.8 mm | Pad Dimension0.4 mm | Packaging7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | Height0.8 mm | |||||
 | Simulation– | Downloads7 files | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWR-PHD Pin Header - Single | – | – | – | – | – | – | – | – | – | – | – | Operating Temperature -40 °C up to +105 °C | – | Insulation Resistance1000 MΩ | – | Length10.16 mm | – | – | PackagingBag | – | – | – | – | – | – | – | – | – | MountTHT | Pins4 | Working Voltage250 V (AC) | – | – | – | – | – | TypeAngled | Rated Current3000 mA | – | – | |||
 | WE-PPTI Push-Pull Transformers, –, – | Simulation– | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-PPTI Push-Pull Transformers | – | – | – | – | – | – | – | – | – | – | Size1209 | Operating Temperature -40 °C up to +125 °C | – | – | – | Length9.14 mm | Width12.7 mm | – | PackagingTape and Reel | Input Voltage 5 V (DC) | Output Voltage 15 V (DC) | Output Current 10.65 A | Type of InsulationReinforced | Switching Frequency 300 - 620 | Voltage-µSecond10 Vµs | Turns Ratio1:1.3 | Inductance340 µH | Insulation Test Voltage5000 V (RMS) | MountSMT | – | – | – | – | – | – | – | – | – | – | Height7.62 mm |