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Overview
| Topology | FPGA |
| IC revision | 1.1 |
Description
The Virtex® UltraScale+™ FPGA VCU118 Evaluation Kit is the ideal development environment for evaluating the cutting edge Virtex UltraScale+ FPGAs. Virtex UltraScale+ devices provide the highest performance and integration capabilities in a FinFET node, including both the highest serial I/O and signal processing bandwidth, as well as the highest on-chip memory density.This kit is ideal for prototyping applications ranging from 1+ Tb/s networking and data center to fully integrated radar/early-warning systems.
Features
Virtex UltraScale+ XCVU9P-L2FLGA2104 device
- Zynq®-7000 AP SoC XC7Z010 based system controller
- Two 2.5 GB DDR4 80-bit component memory interfaces (five [256 Mb x 16] deviceseach)
- 288 MB 72-bit RLD3 memory interface comprised of two 1.125 Gb 36-bit devices
- 1 Gb (128 MB) linear x16 BPI flash memory
- USB JTAG interface using a Digilent module with separate micro-B USB connector
- Clock sources:° Si5335A quad clock generator° Three Si570 I2C programmable LVDS clock generators° One SG5032 fixed 250 MHz LVDS clock generator° Si5328B clock multiplier and jitter attenuator for QSFP° Subminiature version A (SMA) connectors (differential)
- 52 GTY transceivers (13 Quads)° FMC+ HSPC connector (twenty-four GTY transceivers)° 2x28 Gb/s QSFP+ connectors (eight GTY transceivers)° Samtec Firefly connector (four GTY transceiver)° PCIe 16-lane edge connector (sixteen GTY transceivers)
- PCI Express endpoint connectivity° Gen1 16-lane (x16)° Gen2 16-lane (x16)° Gen3 8-lane (x8)
- Ethernet PHY SGMII interface with RJ-45 connector
- Dual USB-to-UART bridge with micro-B USB connector
- I2C bus
- Status LEDs
- User I/O (4-pole DIP switch, 6 each push-button switches, 8 x LED)
More information
Products
Order Code | Datasheet | Replacement Order Code | Simulation | Downloads | Status | Product series | L(µH) | IR(mA) | IR 2(mA) | ISAT(mA) | RDC(mΩ) | fres(MHz) | Type | H(mm) | W(mm) | IR(A) | RDC max.(mΩ) | VT(V (RMS)) | Material | Version | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | Qmin. | LR(µH) | Data rate | PoE | Ports | Tab | Improved CMRR | Operating Temperature | LED | PHY Chip Mode | Mount | Shield Tabs | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCI SMT Flat Wire High Current Inductor, 0.22 µH, – | – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-HCI SMT Flat Wire High Current Inductor | Inductance0.22 µH | – | – | – | DC Resistance1.1 mΩ | Self Resonant Frequency290 MHz | – | Height3.8 mm | Width6.9 mm | – | DC Resistance1.1 mΩ | – | MaterialSuperflux | VersionSMT | Performance Rated Current36.4 A | Saturation Current @ 10%15 A | Saturation Current @ 30%32 A | – | Rated Inductance0.18 µH | – | – | – | – | – | Operating Temperature -40 °C up to +150 °C | – | – | MountSMT | – | ||||
| WE-HCI SMT Flat Wire High Current Inductor, 0.68 µH, – | – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-HCI SMT Flat Wire High Current Inductor | Inductance0.68 µH | – | – | – | DC Resistance3.1 mΩ | Self Resonant Frequency105 MHz | – | Height3.8 mm | Width6.9 mm | – | DC Resistance3.41 mΩ | – | MaterialSuperflux | VersionSMT | Performance Rated Current20.9 A | Saturation Current @ 10%9.5 A | Saturation Current @ 30%20 A | – | Rated Inductance0.52 µH | – | – | – | – | – | Operating Temperature -40 °C up to +150 °C | – | – | MountSMT | – | ||||
 | WE-HCC SMT High Current Cube Inductor, 0.68 µH, – | – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-HCC SMT High Current Cube Inductor | Inductance0.68 µH | – | – | – | – | Self Resonant Frequency108 MHz | – | Height9.5 mm | Width11.4 mm | Rated Current26 A | DC Resistance1.85 mΩ | – | MaterialFerrite | VersionSMT | Performance Rated Current40.2 A | Saturation Current @ 10%35.8 A | Saturation Current @ 30%39.1 A | – | Rated Inductance0.66 µH | – | – | – | – | – | Operating Temperature -40 °C up to +125 °C | – | – | MountSMT | – | ||||
 | WE-PMI Power Multilayer Inductor, 1 µH, 1450 mA | 74479787210A 74479887210A | Simulation– | Downloads– | Status PTNi| Production will be discontinued. Expected lifetime: <2 years. | Product seriesWE-PMI Power Multilayer Inductor | Inductance1 µH | Rated Current1450 mA | Rated Current 21950 mA | Saturation Current1150 mA | DC Resistance60 mΩ | Self Resonant Frequency75 MHz | TypeLow RDC | Height0.8 mm | Width2 mm | – | DC Resistance75 mΩ | – | – | VersionSMT | – | – | – | Q-Factor [1]23 | – | – | – | – | – | – | Operating Temperature -40 °C up to +125 °C | – | – | MountSMT | – | – | |
| WE-HCI SMT Flat Wire High Current Inductor, 1 µH, – | – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-HCI SMT Flat Wire High Current Inductor | Inductance1 µH | – | – | – | DC Resistance4.6 mΩ | Self Resonant Frequency85 MHz | – | Height3.8 mm | Width6.9 mm | – | DC Resistance4.6 mΩ | – | MaterialSuperflux | VersionSMT | Performance Rated Current16.8 A | Saturation Current @ 10%8 A | Saturation Current @ 30%19 A | – | Rated Inductance0.78 µH | – | – | – | – | – | Operating Temperature -40 °C up to +150 °C | – | – | MountSMT | – | ||||
 | WE-TPC SMT Tiny Power Inductor, 1.2 µH, – | – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-TPC SMT Tiny Power Inductor | Inductance1.2 µH | – | – | Saturation Current3000 mA | – | Self Resonant Frequency180 MHz | – | Height2.8 mm | Width2.8 mm | Rated Current2.6 A | DC Resistance42 mΩ | – | – | VersionSMT | – | – | – | – | – | – | – | – | – | – | Operating Temperature -40 °C up to +125 °C | – | – | MountSMT | – | ||||
 | WE-SPC SMT Power Inductor, 3.3 µH, – | – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-SPC SMT Power Inductor | Inductance3.3 µH | – | – | Saturation Current3600 mA | – | Self Resonant Frequency64 MHz | – | Height3.8 mm | Width4.8 mm | Rated Current2.6 A | DC Resistance36 mΩ | – | – | VersionSMT | – | – | – | – | – | – | – | – | – | – | Operating Temperature -40 °C up to +125 °C | – | – | MountSMT | – | ||||
| WE-PMI Power Multilayer Inductor, 10 µH, 600 mA | – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-PMI Power Multilayer Inductor | Inductance10 µH | Rated Current600 mA | Rated Current 2850 mA | Saturation Current125 mA | DC Resistance300 mΩ | Self Resonant Frequency20 MHz | TypeHigh Saturation Current | Height0.8 mm | Width2 mm | – | DC Resistance390 mΩ | – | – | VersionSMT | – | – | – | Q-Factor [1]27 | – | – | – | – | – | – | Operating Temperature -40 °C up to +125 °C | – | – | MountSMT | – | ||||
 | WE-RJ45 LAN Transformer, 350 µH, – | – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-RJ45 LAN Transformer | Inductance350 µH | – | – | – | – | – | – | Height13.9 mm | Width16.79 mm | – | – | Insulation Test Voltage1500 V (RMS) | – | VersionTHT | – | – | – | – | – | Data rate1000BASE-T | PoEnon-PoE | Ports1 | Tab PositionUp | Improved Common Mode RejectionNo | Operating Temperature 0 °C up to +70 °C | LED (Left-Right)green-green | PHY Chip Modecurrent & voltage | MountTHT | Shield TabsYes |