IC manufacturers Texas Instruments

IC manufacturers (103)

Texas Instruments TPS23730 | Demoboard PMP23365

24V, 3A Class 8 PoE PD reference design with external hot swap and telemetry

Overview

TopologyLAN / POE
Input voltage24 V
IC revisionB

Description

This reference design implements a Power-over-Ethernet (PoE) power device (PD) active-clamp forward converter with 24V and 3A output. A TPS23730 PD with integrated pulse-width modulator (PWM) controller provides the necessary functions for the PoE PD and PWM control for the active-clamp forward converter. This design uses secondary-side regulation (SSR) with an optocoupler feedback. An external hot swap is added to enable Class-7 and 8 PD applications. INA237 is used on the primary side to monitor the DC/DC input voltage and current, and the power information is sent to the secondary side by either I2C isolator or optocoupler-based circuits.

Features

IEEE 802.3bt Type 3 compliant PoE PDIntegrated PWM controller for flyback or active clamp forward configurationFrequency dithering for EMI reductionSoft-start control with advanced start-up and hiccup mode overload protectionSoft-stop shutdownOptional adapter input

Typical applications

More information

Products

Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
λDom typ.(nm)
Emitting Color
λPeak typ.(nm)
IV typ.(mcd)
VF typ.(V)
Chip Technology
50% typ.(°)
IRP,40K(A)
ISAT,10%(A)
ISAT,30%(A)
RDC(mΩ)
fres(MHz)
Material
Version
VIN
VOut1(V (DC))
IOut1(A)
Vaux(V)
n
ISAT(A)
Size
Pins
Color
Gender
Packaging
Z @ 100 MHz(Ω)
Zmax(Ω)
Test Condition Zmax
IR(mA)
Z @ 1 GHz(Ω)
H(mm)
Type
Data rate
Ports
PoE
Improved CMRR
Operating Temperature
VT(V (RMS))
Mount
L(µH)
Samples
WL-SMCW SMT Mono-color Chip LED Waterclear, 590 nm, Yellow
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Dominant Wavelength [typ.]590 nm
Emitting ColorYellow 
Peak Wavelength [typ.]595 nm
Luminous Intensity [typ.]120 mcd
Forward Voltage [typ.]2 V
Chip TechnologyAlInGaP 
Viewing Angle Phi 0° [typ.]140 °
Size0603 
PackagingTape and Reel 
Height0.7 mm
Operating Temperature -40 °C up to +85 °C
MountSMT 
WE-MPSB EMI Multilayer Power Suppression Bead, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
VersionSMT 
Size0805 
Impedance @ 100 MHz180 Ω
Maximum Impedance202 Ω
Maximum Impedance155 MHz 
Rated Current3100 mA
Impedance @ 1 GHz61 Ω
Height0.9 mm
TypeHigh Current 
Operating Temperature -55 °C up to +125 °C
MountSMT 
WE-HCI SMT Flat Wire High Current Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Performance Rated Current6.4 A
Saturation Current @ 10%6.25 A
Saturation Current @ 30%7 A
DC Resistance33.5 mΩ
Self Resonant Frequency7.5 MHz
MaterialMnZn 
VersionSMT 
Size1890 
Pins
Height8.9 mm
Operating Temperature -40 °C up to +125 °C
MountSMT 
Inductance47 µH
WR-PHD Jumper, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Product seriesWR-PHD Jumper
Pins
ColorBlack 
GenderJumper 
PackagingBag 
Rated Current3000 mA
Operating Temperature -40 °C up to +125 °C
WE-LAN LAN Transformer, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
VersionSMT 
Turns Ratio1:1 
Pins24 
Height98.8 mm
Type4PPoE (to 900 mA) 
Data rate10/100/1000BASE-T 
Ports
PoE4PPoE (up to 1000 mA) 
Improved Common Mode RejectionNo 
Operating Temperature -40 °C up to +105 °C
Insulation Test Voltage1500 V (RMS)
MountSMT 
Inductance350 µH
WE-PoE++ Power over Ethernet Plus Plus Transformer, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
VersionForward 
Input Voltage 36 - 57 V (DC)
Output Voltage 124 V (DC)
Output Current 12.5 A
Auxiliary Voltage12 V
Turns Ratio2:2:1 
Saturation Current1.8 A
SizeEFD20 
Height11.43 mm
Operating Temperature -40 °C up to +125 °C
Insulation Test Voltage1500 V (RMS)
MountSMT 
Inductance100 µH