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Texas Instruments PTH08080WAZT | Demoboard TIDA-01606 Power Card
10kW 3-Phase 3-Level Grid Tie Inverter Reference Design for Solar String Inverter
Overview
| Topology | Other Topology |
| Input voltage | 12 V |
| Output 1 | 9 V |
| IC revision | E4 |
Description
This verified reference design provides an overview on how to implement a three-level three-phase SiC based DC:AC grid-tie inverter stage.Higher switching frequency of 50KHz reduces the size of magnetics for the filter design and enables higher power density. The use of SiC MOSFETs with switching loss ensures higher DC bus voltages of up to 1000V and lower switching losses with a peak efficiency of 99 percent. This design is configurable to work as a two-level or three-level inverter.The system is controlled by a single C2000 microcontroller (MCU), TMS320F28379D, which generates PWM waveforms for all power electronic switching devices under all operating modes.
Features
- Rated Nominal and Max Input Voltage at 800-V and 1000-V DC
- Max 10-kW/10-kVA Output Power at 400-V AC 50- or 60-Hz Grid-Tie Connection
- Operating Power Factor Range From 0.7 Lag to 0.7 Lead
- High-Voltage (1200-V) SiC MOSFET-Based FullBridge Inverter for Peak Efficiency of 98.5%
- Compact Output Filter by Switching Inverter at 50 kHz
- <2% Output Current THD at Full Load
- Isolated Driver ISO5852S With Reinforced Isolation for Driving High-Voltage SiC MOSFET and UCC5320S for Driving Middle Si IGBT
- Isolated Current Sensing Using AMC1301 for Load Current Monitoring
- TMS320F28379D Control Card for Digital Control
Typical applications
- Telecommunications
- Instumentation
More information
Products
Order Code | Datasheet | Simulation | Downloads | Status | Product series | λDom typ.(nm) | Emitting Color | λPeak typ.(nm) | IV typ.(mcd) | VF typ.(V) | Chip Technology | 2θ50% typ.(°) | C | VR(V (DC)) | Endurance(h) | IRIPPLE(mA) | Z(mΩ) | ILeak(µA) | DF(%) | Ø D(mm) | L(mm) | Packaging | Z @ 100 MHz(Ω) | Zmax(Ω) | Test Condition Zmax | IR(A) | Z @ 1 GHz(Ω) | H(mm) | Type | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WL-SMCD SMT Mono-color Chip LED Diffused, 573 nm, Bright Green | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWL-SMCD SMT Mono-color Chip LED Diffused | Dominant Wavelength [typ.]573 nm | Emitting ColorBright Green | Peak Wavelength [typ.]575 nm | Luminous Intensity [typ.]60 mcd | Forward Voltage [typ.]2 V | Chip TechnologyAlInGaP | Viewing Angle Phi 0° [typ.]140 ° | – | – | – | – | – | – | – | – | Length1.6 mm | PackagingTape and Reel | – | – | – | – | – | Height0.4 mm | – | ||||
 | WE-MPSB EMI Multilayer Power Suppression Bead, –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MPSB EMI Multilayer Power Suppression Bead | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | Length3.2 mm | – | Impedance @ 100 MHz110 Ω | Maximum Impedance118 Ω | Maximum Impedance150 MHz | Rated Current5.4 A | Impedance @ 1 GHz44 Ω | Height1.1 mm | TypeHigh Current | ||||
 | WCAP-ASLL Aluminum Electrolytic Capacitors, –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWCAP-ASLL Aluminum Electrolytic Capacitors | – | – | – | – | – | – | – | Capacitance100 µF | Rated Voltage50 V (DC) | Endurance 5000 | Ripple Current350 mA | Impedance340 mΩ | Leakage Current50 µA | Dissipation Factor12 % | Diameter8 mm | Length10.5 mm | Packaging15" Tape & Reel | – | – | – | – | – | – | – |