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Texas Instruments PTH08080WAZT | Demoboard TIDA-01606 Power Card
10kW 3-Phase 3-Level Grid Tie Inverter Reference Design for Solar String Inverter
Details
| Topologie | Sonstige Topologie |
| Eingangsspannung | 12 V |
| Ausgang 1 | 9 V |
| IC-Revision | E4 |
Beschreibung
This verified reference design provides an overview on how to implement a three-level three-phase SiC based DC:AC grid-tie inverter stage.Higher switching frequency of 50KHz reduces the size of magnetics for the filter design and enables higher power density. The use of SiC MOSFETs with switching loss ensures higher DC bus voltages of up to 1000V and lower switching losses with a peak efficiency of 99 percent. This design is configurable to work as a two-level or three-level inverter.The system is controlled by a single C2000 microcontroller (MCU), TMS320F28379D, which generates PWM waveforms for all power electronic switching devices under all operating modes.
Eigenschaften
- Rated Nominal and Max Input Voltage at 800-V and 1000-V DC
- Max 10-kW/10-kVA Output Power at 400-V AC 50- or 60-Hz Grid-Tie Connection
- Operating Power Factor Range From 0.7 Lag to 0.7 Lead
- High-Voltage (1200-V) SiC MOSFET-Based FullBridge Inverter for Peak Efficiency of 98.5%
- Compact Output Filter by Switching Inverter at 50 kHz
- <2% Output Current THD at Full Load
- Isolated Driver ISO5852S With Reinforced Isolation for Driving High-Voltage SiC MOSFET and UCC5320S for Driving Middle Si IGBT
- Isolated Current Sensing Using AMC1301 for Load Current Monitoring
- TMS320F28379D Control Card for Digital Control
Typische Anwendungen
- Telecommunications
- Instumentation
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | λDom typ.(nm) | Emittierte Farbe | λPeak typ.(nm) | IV typ.(mcd) | VF typ.(V) | Chiptechnologie | 2θ50% typ.(°) | C | VR(V (DC)) | Endurance(h) | IRIPPLE(mA) | Z(mΩ) | ILeak(µA) | DF(%) | Ø D(mm) | L(mm) | Verpackung | Z @ 100 MHz(Ω) | Zmax(Ω) | Testbedingung Zmax | IR(A) | Z @ 1 GHz(Ω) | H(mm) | Typ | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WL-SMCD SMT Mono-color Chip LED Diffused, 573 nm, Hellgrün | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWL-SMCD SMT Mono-color Chip LED Diffused | dominante Wellenlänge [typ.]573 nm | Emittierte FarbeHellgrün | Spitzen-Wellenlänge [typ.]575 nm | Lichtstärke [typ.]60 mcd | Durchlassspannung [typ.]2 V | ChiptechnologieAlInGaP | Abstrahlwinkel Phi 0° [typ.]140 ° | – | – | – | – | – | – | – | – | Länge1.6 mm | VerpackungTape and Reel | – | – | – | – | – | Höhe0.4 mm | – | ||||
 | WE-MPSB EMI Multilayer Power Suppression Bead, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MPSB EMI Multilayer Power Suppression Bead | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | Länge3.2 mm | – | Impedanz @ 100 MHz110 Ω | Maximale Impedanz118 Ω | Maximale Impedanz150 MHz | Nennstrom5.4 A | Impedanz @ 1 GHz44 Ω | Höhe1.1 mm | TypHochstrom | ||||
 | WCAP-ASLL Aluminium-Elektrolytkondensatoren, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-ASLL Aluminium-Elektrolytkondensatoren | – | – | – | – | – | – | – | Kapazität100 µF | Nennspannung50 V (DC) | Endurance 5000 | Rippelstrom350 mA | Impedanz340 mΩ | Leckstrom50 µA | Verlustfaktor12 % | Durchmesser8 mm | Länge10.5 mm | Verpackung15" Tape & Reel | – | – | – | – | – | – | – |