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Overview
| Topology | Buck Converter |
| Input voltage | 48 V |
| Output 1 | 5 V / 10 A |
| IC revision | 001 |
Description
The LMG5200 device, an 80-V, 10-A driver plus GaN half-bridge power stage, provides an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 80-V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input capacitance CISS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG5200 device is available in a 6 mm × 8 mm × 2 mm lead-free package and can be easily mounted on PCBs.The TTL logic compatible inputs can withstand input voltages up to 12 V regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor. When used with the TPS53632G controller, the LMG5200 enables direct conversion from 48-V to point-of-load voltages (0.5-1.5 V).
Features
- Integrated 15-mΩ GaN FETs and Driver
- 80-V Continuous, 100-V Pulsed Voltage Rating
- Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements
- Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Causing Excessive Ringing in Hard-Switched Topologies
- Ideal for Isolated and Non-Isolated Applications
- Gate Driver Capable of Up to 10 MHz Switching
- Internal Bootstrap Supply Voltage Clamping to Prevent GaN FET Overdrive
- Supply Rail Undervoltage Lockout Protection
- Excellent Propagation Delay (29.5 ns Typical) and Matching (2 ns Typical)
- Low Power Consumption
Typical applications
- Servo drives and motion control / Computer numerical control (CNC) drives / Manufacturing robots / Service robots
More information
Products
Order Code | Datasheet | Simulation | Downloads | Status | Product series | λDom typ.(nm) | Emitting Color | λPeak typ.(nm) | IV typ.(mcd) | VF typ.(V) | Chip Technology | 2θ50% typ.(°) | L(µH) | ISAT,10%(A) | ISAT,30%(A) | IR,40K(A) | IRP,40K(A) | fres(MHz) | Size | Version | Pins | Color | Gender | IR(mA) | Packaging | Z @ 100 MHz(Ω) | Zmax(Ω) | Test Condition Zmax | IR 2(mA) | RDC max.(Ω) | Type | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WL-SMCW SMT Mono-color Chip LED Waterclear, 525 nm, Green | Downloads27 files RAY files
| Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWL-SMCW SMT Mono-color Chip LED Waterclear | Dominant Wavelength [typ.]525 nm | Emitting ColorGreen | Peak Wavelength [typ.]515 nm | Luminous Intensity [typ.]430 mcd | Forward Voltage [typ.]3.2 V | Chip TechnologyInGaN | Viewing Angle Phi 0° [typ.]140 ° | – | – | – | – | – | – | Size0603 | – | – | – | – | – | PackagingTape and Reel | – | – | – | – | – | – | |||
 | WE-CBF SMT EMI Suppression Ferrite Bead, –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-CBF SMT EMI Suppression Ferrite Bead | – | – | – | – | – | – | – | – | – | – | – | – | – | Size0402 | VersionSMT | – | – | – | Rated Current200 mA | – | Impedance @ 100 MHz300 Ω | Maximum Impedance400 Ω | Maximum Impedance380 MHz | Rated Current 2700 mA | DC Resistance0.8 Ω | TypeWide Band | ||||
 | WE-PD SMT Power Inductor, –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-PD SMT Power Inductor | – | – | – | – | – | – | – | Inductance100 µH | Saturation Current @ 10%3.1 A | Saturation Current @ 30%3.8 A | Rated Current2.5 A | Performance Rated Current3.2 A | Self Resonant Frequency4.3 MHz | Size1210 | VersionStandard | Pins2 | – | – | Rated Current2500 mA | – | – | – | – | – | DC Resistance0.11 Ω | – | ||||
 | WR-PHD Jumper, –, – | Simulation– | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWR-PHD Jumper | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | Pins1 | ColorBlack | GenderJumper | Rated Current3000 mA | PackagingBag | – | – | – | – | – | – |