IC-Hersteller Texas Instruments

IC-Hersteller (103)

Texas Instruments LMG5200 | Demoboard BOOSTXL-3PhGaNInv

80V GaN Half Bridge Power Stage

Details

TopologieAbwärtswandler
Eingangsspannung48 V
Ausgang 15 V / 10 A
IC-Revision001

Beschreibung

The LMG5200 device, an 80-V, 10-A driver plus GaN half-bridge power stage, provides an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 80-V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input capacitance CISS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG5200 device is available in a 6 mm × 8 mm × 2 mm lead-free package and can be easily mounted on PCBs.The TTL logic compatible inputs can withstand input voltages up to 12 V regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor. When used with the TPS53632G controller, the LMG5200 enables direct conversion from 48-V to point-of-load voltages (0.5-1.5 V).

Eigenschaften

  • Integrated 15-mΩ GaN FETs and Driver
  • 80-V Continuous, 100-V Pulsed Voltage Rating
  • Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements
  • Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Causing Excessive Ringing in Hard-Switched Topologies
  • Ideal for Isolated and Non-Isolated Applications
  • Gate Driver Capable of Up to 10 MHz Switching
  • Internal Bootstrap Supply Voltage Clamping to Prevent GaN FET Overdrive
  • Supply Rail Undervoltage Lockout Protection
  • Excellent Propagation Delay (29.5 ns Typical) and Matching (2 ns Typical)
  • Low Power Consumption

Typische Anwendungen

  • Servo drives and motion control / Computer numerical control (CNC) drives / Manufacturing robots / Service robots

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
λDom typ.(nm)
Emittierte Farbe
λPeak typ.(nm)
IV typ.(mcd)
VF typ.(V)
Chiptechnologie
50% typ.(°)
L(µH)
ISAT,10%(A)
ISAT,30%(A)
IR,40K(A)
IRP,40K(A)
fres(MHz)
Bauform
Version
Pins
Farbe
Gender
IR(mA)
Verpackung
Z @ 100 MHz(Ω)
Zmax(Ω)
Testbedingung Zmax
IR 2(mA)
RDC max.(Ω)
Typ
Muster
WL-SMCW SMT Mono-color Chip LED Waterclear, 525 nm, Grün
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
dominante Wellenlänge [typ.]525 nm
Emittierte FarbeGrün 
Spitzen-Wellenlänge [typ.]515 nm
Lichtstärke [typ.]430 mcd
Durchlassspannung [typ.]3.2 V
ChiptechnologieInGaN 
Abstrahlwinkel Phi 0° [typ.]140 °
Bauform0603 
VerpackungTape and Reel 
WE-CBF SMT-Ferrit, –, –
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
ProduktserieWE-CBF SMT-Ferrit
Bauform0402 
VersionSMT 
Nennstrom200 mA
Impedanz @ 100 MHz300 Ω
Maximale Impedanz400 Ω
Maximale Impedanz380 MHz 
Nennstrom 2700 mA
Gleichstromwiderstand0.8 Ω
TypBreitband 
WE-PD Speicherdrossel, –, –
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität100 µH
Sättigungsstrom 13.1 A
Sättigungsstrom @ 30%3.8 A
Nennstrom2.5 A
Performance Nennstrom3.2 A
Eigenresonanzfrequenz4.3 MHz
Bauform1210 
VersionGestanzt 
Pins
Nennstrom2500 mA
Gleichstromwiderstand0.11 Ω
WR-PHD Kurzschlussbrücken, –, –
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Pins
FarbeSchwarz 
GenderJumper 
Nennstrom3000 mA
VerpackungBeutel