IC manufacturers Texas Instruments

IC manufacturers (103)

Texas Instruments LMG2100R044 | Demoboard TIDA-010936

48V/16A small form factor three-phase GaN inverter reference design for integrated motor drives

Overview

TopologyPositive to Negative Converter
Input voltage12-60 V
Switching frequency40-100 kHz
Output 148 V / 17 A
IC revisionA

Description

This reference design demonstrates a high-power density 12V to 60V 3-phase power stage using three LMG2100R044 100V, 35A GaN half-bridges with integrated GaN FETs, driver and bootstrap diode specifically for motor-integrated servo drives and robotics applications. Accurate phase-current sensing is achieved through the IN241A current sense amplifier, DC-link and phase voltages are also measured allowing validation of advanced sensorless designs, such as the InstaSPIN-FOC™. The design offers a TI BoosterPack compatible 3.3-V I/O interface to connect to a C2000™ MCU LaunchPad™ development kit or Sitara™ microcontrollers for quick and easy performance evaluation of our GaN technology.

Features

High efficiency (99.3% peak) at 40kHz PWM enables operation at 25C ambient and up to 16Arms continuous current without heatsink
Small form factor GaN half-bridge power stage enables high power density and simplifies PCB layoutGaN half-bridge enables operation at higher PWM frequencies to help reduce DC-bus capacitor height while replacing electrolytics with ceramic capacitorsZero reverse recovery losses reduce switch node oscillations
Low dead time of 16.6ns minimize phase voltage distortions Precision phase current sense with ±33A range using 1-mΩ shunt and current sense amplifier with high PWM rejection

Typical applications

  • Power tools
  • LLC converters
  • Telecom and server power
  • Buck, boost, buck-boost converters
  • Motor drives
  • Solar inverters

More information

Products

Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
λDom typ.(nm)
Emitting Color
λPeak typ.(nm)
IV typ.(mcd)
VF typ.(V)
Chip Technology
50% typ.(°)
C
Tol. C
VR(V (DC))
Size
Operating Temperature
DF(%)
RISO
Ceramic Type
L(mm)
W(mm)
H(mm)
Fl(mm)
Packaging
L(µH)
IRP,40K(A)
ISAT,10%(A)
ISAT,30%(A)
fres(MHz)
Mount
Z @ 100 MHz(Ω)
Zmax(Ω)
Test Condition Zmax
IR 2(mA)
RDC max.(Ω)
Type
Samples
WL-SMCW SMT Mono-color Chip LED Waterclear, 525 nm, Green
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Dominant Wavelength [typ.]525 nm
Emitting ColorGreen 
Peak Wavelength [typ.]515 nm
Luminous Intensity [typ.]430 mcd
Forward Voltage [typ.]3.2 V
Chip TechnologyInGaN 
Viewing Angle Phi 0° [typ.]140 °
Size0603 
Operating Temperature -40 °C up to +85 °C
Length1.6 mm
Width0.8 mm
Height0.7 mm
PackagingTape and Reel 
MountSMT 
WE-CBF SMT EMI Suppression Ferrite Bead, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Size0402 
Operating Temperature -55 °C up to +125 °C
Length1 mm
Width0.5 mm
Height0.5 mm
Pad Dimension0.25 mm
MountSMT 
Impedance @ 100 MHz300 Ω
Maximum Impedance400 Ω
Maximum Impedance380 MHz 
Rated Current 2700 mA
DC Resistance0.8 Ω
TypeWide Band 
WE-LHMI SMT Power Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Size4020 
Operating Temperature -40 °C up to +125 °C
Length4.45 mm
Width4.06 mm
Height1.8 mm
Inductance22 µH
Performance Rated Current1.3 A
Saturation Current @ 10%1.45 A
Saturation Current @ 30%2.35 A
Self Resonant Frequency14 MHz
MountSMT 
DC Resistance0.5 Ω
WCAP-CSGP MLCCs 16 V(DC), –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance2.2 nF
Capacitance±10% 
Rated Voltage16 V (DC)
Size0603 
Operating Temperature -55 °C up to +125 °C
Dissipation Factor3.5 %
Insulation Resistance10 GΩ
Ceramic TypeX7R Class II 
Length1.6 mm
Width0.8 mm
Height0.8 mm
Pad Dimension0.4 mm
Packaging7" Tape & Reel