| Topologie | Inverswandler | 
| Eingangsspannung | 12-60 V | 
| Schaltfrequenz | 40-100 kHz | 
| Ausgang 1 | 48 V / 17 A | 
| IC-Revision | A | 
This reference design demonstrates a high-power density 12V to 60V 3-phase power stage using three LMG2100R044 100V, 35A GaN half-bridges with integrated GaN FETs, driver and bootstrap diode specifically for motor-integrated servo drives and robotics applications. Accurate phase-current sensing is achieved through the IN241A current sense amplifier, DC-link and phase voltages are also measured allowing validation of advanced sensorless designs, such as the InstaSPIN-FOC™. The design offers a TI BoosterPack compatible 3.3-V I/O interface to connect to a C2000™ MCU LaunchPad™ development kit or Sitara™ microcontrollers for quick and easy performance evaluation of our GaN technology.
High efficiency (99.3% peak) at 40kHz PWM enables operation at 25C ambient and up to 16Arms continuous current without heatsink
Small form factor GaN half-bridge power stage enables high power density and simplifies PCB layoutGaN half-bridge enables operation at higher PWM frequencies to help reduce DC-bus capacitor height while replacing electrolytics with ceramic capacitorsZero reverse recovery losses reduce switch node oscillations
Low dead time of 16.6ns minimize phase voltage distortions Precision phase current sense with ±33A range using 1-mΩ shunt and current sense amplifier with high PWM rejection
| Artikel Nr. | Datenblatt | Simulation | |
|---|---|---|---|
|  | 150060GS75000 | SPEC | |
|  | 74279272 | SPEC | |
|  | 74437324220 | SPEC | |
|  | 885012206036 | SPEC | 
| Muster | 
|---|
| Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | λDom typ. (nm) | Farbe | λPeak typ. (nm) | IV typ. (mcd) | VF typ. (V) | Chiptechnologie | 2θ50% typ. (°) | C | Tol. C | VR (V (DC)) | Bauform | Betriebstemperatur | DF (%) | RISO | Keramiktyp | L (mm) | W (mm) | H (mm) | Fl (mm) | Verpackung | L (µH) | IRP,40K (A) | ISAT,10% (A) | ISAT,30% (A) | fres (MHz) | Montageart | Z @ 100 MHz (Ω) | Zmax (Ω) | Testbedingung Zmax | IR 2 (mA) | RDC max. (Ω) | Typ | Muster | 
|---|