IC manufacturers STMicroelectronics

IC manufacturers (103)

STMicroelectronics PM8805 | Demoboard STEVAL-POE005V1

Overview

TopologyLAN / POE
Input voltage48-75 V
Output 112 V / 8 A
IC revision1

Description

The PM8805 is a system-in-package for smart power supply of Power over Ethernet (PoE) Powered Devices (PD) and it is applicable for power level up to 99.9 W.It embeds: two active bridges and their driving circuitry, a charge pump to drive the high-side MOSFETs, the hot swap MOSFET and the interface compliant with IEEE 802.3bt.The device performs the physical layer classification, providing the indication of successful PSE type identification. A 4-pair PSE is identified and the information is available by a dedicated matrix of Tx signals.The device works with power either from the Ethernet cable or from an external power source such as a wall adapter, with possible prevalence of the auxiliary source with respect to the PoE.The PM8805 is suitable to build the interface section of PoE switch mode power supplies targeting the highest conversion efficiency. It provides a PGD signal that can be used to enable a PWM controller, a DC-DC converter or an LED driver.

Features

  • Dual active bridge, hot swap MOSFETand PoE-PD interface in a system-in-package
  • 100 V N-ch MOSFETs with 0.2 Ω total path resistance for each active bridge.
  • 100 V, 0.1 Ω high-side N-ch hot swap MOSFET
  • PoE-PD single-signature interface compliant with IEEE 802.3bt / at / af
  • Supports 4-pair PoE applications
  • Supports 12 V auxiliary sources
  • Identifies which kind of PSE (standard or legacy) is connected with and provides successful IEEE802.3bt / at / af classification indication as a combination of the T0, T1 and T2 signals (open drain)
  • Smart operational modes
  • Programmable classification current with 3.3 ms delay.
  • Optional Autoclass feature
  • Advanced energy-saving MPS timings
  • Two-step hot swap current protection: DC with 1 ms delay and short-circuit with 10 us delay.
  • Controlled pre-charge of the output capacitor
  • PGD signal (open drain) to enable an external PWM controller.
  • Thermal shutdown protection

More information

Products

Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
C
Tol. C
Size
Qmin.
DF(%)
RISO
Ceramic Type
L(mm)
W(mm)
H(mm)
Fl(mm)
Packaging
Q(%)
IRP,40K(A)
ISAT,10%(A)
ISAT,30%(A)
RDC(mΩ)
fres(MHz)
Material
RDC max.(Ω)
Wire Type
Winding Style
Number of windings
L1(µH)
Zmax(Ω)
IR(mA)
RDC max.(Ω)
VR(V (DC))
Data rate
Ports
PoE
Improved CMRR
Operating Temperature
VT(V (AC))
Mount
L(µH)
LSmin.(nH)
Samples
WCAP-CSGP MLCCs 50 V(DC), 100 pF, ±5%
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance100 pF
Capacitance±5% 
Size0805 
Insulation Resistance10 GΩ
Ceramic TypeNP0 Class I 
Length2 mm
Width1.25 mm
Height0.6 mm
Pad Dimension0.5 mm
Packaging7" Tape & Reel 
Q-Factor1000 %
Rated Voltage50 V (DC)
Operating Temperature -55 °C up to +125 °C
WCAP-CSGP MLCCs 25 V(DC), 220 pF, ±5%
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance220 pF
Capacitance±5% 
Size0603 
Insulation Resistance10 GΩ
Ceramic TypeNP0 Class I 
Length1.6 mm
Width0.8 mm
Height0.8 mm
Pad Dimension0.4 mm
Packaging7" Tape & Reel 
Q-Factor1000 %
Rated Voltage25 V (DC)
Operating Temperature -55 °C up to +125 °C
WCAP-CSGP MLCCs 25 V(DC), 1 nF, ±10%
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance1 nF
Capacitance±10% 
Size0603 
Q-Factor [1]600 
Dissipation Factor3.5 %
Insulation Resistance10 GΩ
Ceramic TypeX7R Class II 
Length1.6 mm
Width0.8 mm
Height0.8 mm
Pad Dimension0.4 mm
Packaging7" Tape & Reel 
Rated Voltage25 V (DC)
Operating Temperature -55 °C up to +125 °C
WCAP-CSGP MLCCs 100 V(DC), 1 nF, ±10%
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance1 nF
Capacitance±10% 
Size0805 
Q-Factor [1]600 
Dissipation Factor2.5 %
Insulation Resistance10 GΩ
Ceramic TypeX7R Class II 
Length2 mm
Width1.25 mm
Height0.8 mm
Pad Dimension0.5 mm
Packaging7" Tape & Reel 
Rated Voltage100 V (DC)
Operating Temperature -55 °C up to +125 °C
WCAP-CSMH Mid and High Voltage, 1 nF, ±10%
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance1 nF
Capacitance±10% 
Size0805 
Dissipation Factor2.5 %
Insulation Resistance10 GΩ
Ceramic TypeX7R Class II 
Length2 mm
Width1.25 mm
Height0.8 mm
Pad Dimension0.5 mm
Packaging7" Tape & Reel 
Q-Factor600 %
Rated Voltage250 V (DC)
Operating Temperature -55 °C up to +125 °C
WCAP-CSGP MLCCs 100 V(DC), 1.5 nF, ±10%
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance1.5 nF
Capacitance±10% 
Size0603 
Q-Factor [1]600 
Dissipation Factor2.5 %
Insulation Resistance10 GΩ
Ceramic TypeX7R Class II 
Length1.6 mm
Width0.8 mm
Height0.8 mm
Pad Dimension0.4 mm
Packaging7" Tape & Reel 
Rated Voltage100 V (DC)
Operating Temperature -55 °C up to +125 °C
WCAP-CSGP MLCCs 25 V(DC), 10 nF, ±10%
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance10 nF
Capacitance±10% 
Size0603 
Q-Factor [1]600 
Dissipation Factor3.5 %
Insulation Resistance10 GΩ
Ceramic TypeX7R Class II 
Length1.6 mm
Width0.8 mm
Height0.8 mm
Pad Dimension0.4 mm
Packaging7" Tape & Reel 
Rated Voltage25 V (DC)
Operating Temperature -55 °C up to +125 °C
WCAP-CSGP MLCCs 100 V(DC), 10 nF, ±10%
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance10 nF
Capacitance±10% 
Size0603 
Q-Factor [1]600 
Dissipation Factor2.5 %
Insulation Resistance10 GΩ
Ceramic TypeX7R Class II 
Length1.6 mm
Width0.8 mm
Height0.8 mm
Pad Dimension0.4 mm
Packaging7" Tape & Reel 
Rated Voltage100 V (DC)
Operating Temperature -55 °C up to +125 °C
WCAP-CSMH Mid and High Voltage, 10 nF, ±10%
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance10 nF
Capacitance±10% 
Size0805 
Dissipation Factor2.5 %
Insulation Resistance10 GΩ
Ceramic TypeX7R Class II 
Length2 mm
Width1.25 mm
Height1.25 mm
Pad Dimension0.5 mm
Packaging7" Tape & Reel 
Q-Factor600 %
Rated Voltage250 V (DC)
Operating Temperature -55 °C up to +125 °C
WCAP-CSGP MLCCs 25 V(DC), 22 nF, ±10%
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance22 nF
Capacitance±10% 
Size0603 
Q-Factor [1]600 
Dissipation Factor3.5 %
Insulation Resistance10 GΩ
Ceramic TypeX7R Class II 
Length1.6 mm
Width0.8 mm
Height0.8 mm
Pad Dimension0.4 mm
Packaging7" Tape & Reel 
Rated Voltage25 V (DC)
Operating Temperature -55 °C up to +125 °C
WCAP-CSGP MLCCs 100 V(DC), 33 nF, ±10%
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance33 nF
Capacitance±10% 
Size0805 
Q-Factor [1]600 
Dissipation Factor2.5 %
Insulation Resistance3 GΩ
Ceramic TypeX7R Class II 
Length2 mm
Width1.25 mm
Height1.25 mm
Pad Dimension0.5 mm
Packaging7" Tape & Reel 
Rated Voltage100 V (DC)
Operating Temperature -55 °C up to +125 °C
WCAP-CSGP MLCCs 25 V(DC), 100 nF, ±10%
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance100 nF
Capacitance±10% 
Size0603 
Q-Factor [1]600 
Dissipation Factor3.5 %
Insulation Resistance5 GΩ
Ceramic TypeX7R Class II 
Length1.6 mm
Width0.8 mm
Height0.8 mm
Pad Dimension0.4 mm
Packaging7" Tape & Reel 
Rated Voltage25 V (DC)
Operating Temperature -55 °C up to +125 °C
WCAP-CSGP MLCCs 100 V(DC), 100 nF, ±10%
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance100 nF
Capacitance±10% 
Size0805 
Q-Factor [1]600 
Dissipation Factor2.5 %
Insulation Resistance1 GΩ
Ceramic TypeX7R Class II 
Length2 mm
Width1.25 mm
Height1.25 mm
Pad Dimension0.5 mm
Packaging7" Tape & Reel 
Rated Voltage100 V (DC)
Operating Temperature -55 °C up to +125 °C
WCAP-CSGP MLCCs 16 V(DC), 47 µF, ±20%
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance47 µF
Capacitance±20% 
Size1210 
Q-Factor [1]600 
Dissipation Factor10 %
Insulation Resistance0.002 GΩ
Ceramic TypeX5R Class II 
Length3.2 mm
Width2.5 mm
Height2.5 mm
Pad Dimension0.75 mm
Packaging7" Tape & Reel 
Rated Voltage16 V (DC)
Operating Temperature -55 °C up to +85 °C
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Length10 mm
Width8.7 mm
Height6.5 mm
DC Resistance0.065 Ω
Winding Stylesectional 
Number of windings
Inductance [1]470 µH
Maximum Impedance1800 Ω
Rated Current1600 mA
DC Resistance [1]0.065 Ω
Rated Voltage80 V (DC)
Operating Temperature -40 °C up to +125 °C
Insulation Test Voltage1000 V (AC)
MountSMT 
Inductance470 µH
Leakage Inductance [min.]3000 nH
WE-HCI SMT Flat Wire High Current Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Size5040 
Length5.5 mm
Width5.3 mm
Height4 mm
Performance Rated Current5.5 A
Saturation Current @ 10%2.4 A
Saturation Current @ 30%4.6 A
DC Resistance28.5 mΩ
Self Resonant Frequency48 MHz
MaterialSuperflux 
DC Resistance0.03135 Ω
Number of windings15.5 
Operating Temperature -40 °C up to +150 °C
MountSMT 
Inductance5.6 µH
WE-HCF SMT High Current Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Size2013 
Length20.8 mm
Width20.5 mm
Height13.5 mm
Performance Rated Current16.15 A
Saturation Current @ 10%22 A
Saturation Current @ 30%23 A
DC Resistance7.96 mΩ
Self Resonant Frequency13 MHz
MaterialMnZn 
DC Resistance0.00876 Ω
Wire TypeFlat 
Number of windings10.75 
Operating Temperature -40 °C up to +125 °C
MountSMT 
Inductance10 µH
WE-LAN LAN Transformer, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Length18.04 mm
Width14.7 mm
Height9.05 mm
Pad Dimension13.97 mm
DC Resistance500 mΩ
Inductance [1]180 µH
Data rate1000 Base-T 
Ports
PoE4PPoE (up to 1500 mA) 
Improved Common Mode RejectionNo 
Operating Temperature -40 °C up to +105 °C
Insulation Test Voltage1500 V (AC)
MountSMT 
Inductance180 µH