IC manufacturers Silvertel
IC manufacturers (103)
- All manufacturers
Analog Devices
Infineon Technologies
Microchip
Onsemi
Renesas
ROHM
STMicroelectronics
Texas Instruments
- 3peak incorporated (28)
- Ablic (23)
- Acco Semiconductor (1)
- Advanced Power (4)
- Allegro Microsystems (100)
- Alpha & Omega Semiconductor (37)
- AnalogySemi (3)
- AnDAPT Inc (204)
- Anpec (13)
- AXElite (2)
- Backward (6)
- Bright Power Semiconductor (1)
- Broadcom (46)
- Cambridge GaN Devices (18)
- Chipanalog Micro (10)
- Cologne Chips (1)
- Convenient Power (1)
- Dialog Semiconductor (12)
- Diodes Incorporated (259)
- Divimath (8)
- Elmos AG (1)
- EPC (137)
- e-Peas Semiconductors (1)
- Eta Solutions Co. Ltd. (9)
- GaN Systems (8)
- GaNPower (3)
- Giantec (1)
- Gstek Wuxi (1)
- Helix Semiconductor (7)
- IKON (1)
- Indie Semiconductor (8)
- Innovision Semiconductor Inc (2)
- Intel (68)
- Inventchip Technology (3)
- ISSI (51)
- JoulWatt (20)
- KDPOF (3)
- Kinetic Technology (8)
- Lattice semiconductor Corporation (38)
- Littelfuse (1)
- Lumissil Microsystems (8)
- M3 Technology (M3Tek) (7)
- Macnica (22)
- Marvell Semiconductor (1)
- MaxLinear (181)
- Menlo Micro (1)
- MikroE (25)
- MindCet (2)
- Monolithic Power Systems (980)
- Navitas Semiconductor Inc (6)
- NewEdge Technologies, Inc. (1)
- Nexperia (266)
- Nisshinbo Micro Device Inc. (10)
- Novosense Micro (1)
- NXP (335)
- O2 Micro International Ltd (10)
- On Bright (7)
- Panasonic (2)
- PN Junction Semiconductor (2)
- Power Integrations (117)
- Powermat (1)
- Pulsiv (19)
- Qorvo (96)
- Realsil SuRealsil(tek) Microelectronics (1)
- Richtek (297)
- Sanken Electric Co., Ltd. (16)
- Sckipio (6)
- Semtech (86)
- SG-Micro (54)
- SiFive (2)
- Silanna Semiconductor (9)
- Silergy Corporation (33)
- Silicon Laboratory Inc. (108)
- Silicontent Technology (59)
- Silvertel (59)
- Skycore Semiconductors (1)
- Skyworks (33)
- Southchip (14)
- Summit Wireless (1)
- Tagore Tech (7)
- Taiwan Semiconductor (1)
- TDK Corporation (1)
- Tempo Semiconductor (1)
- Torex (37)
- Toshiba (25)
- Transphorm (21)
- TransSIP (2)
- Union (21)
- uPI Semiconductor (2)
- Valens Semiconductor (31)
- Wise Integration (3)
- Wolfspeed (23)
- Xilinx (22)
- XL Semiconductor (3)
- XYSemi (62)
Overview
| Topology | Buck Converter |
| Input voltage | 37-57 V |
| Output 1 | 24 V / 3 A |
| Output 2 | 12 V / 6 A |
| IC revision | 1 |
Description
The Ag5600 is IEEE802.3bt Draft compliant PD module is designed for high power POE applications. Depending on cable length it can output up to 85W when supplied from an IEEE802.3bt PSE. This total solution includes 1.5kV of isolation, PoE signature and an integral DC to DC converter for 12 or 24V output.
Features
- IEEE802.3bt (Draft) compliant module
- Small size – 70mm(L) x 35mm(W) x 17mm(H)
- Cost Optimised 97W POE PSE
- Very low power standby mode
- Overload, thermal and short-circuit protection
- Simple integration
Typical applications
- LED lighting
- intelligent displays and sensors
- PTZ IP cameras / door access systems
- monitors and projectors
More information
Products
Order Code | Datasheet | Simulation | Downloads | Status | Product series | λDom typ.(nm) | Emitting Color | λPeak typ.(nm) | IV typ.(mcd) | VF typ.(V) | Chip Technology | 2θ50% typ.(°) | C | VR(V (DC)) | Endurance(h) | IRIPPLE(mA) | ILeak(µA) | DF(%) | Pitch(mm) | Ø D(mm) | L(mm) | Packaging | Pins | Center pin Ø (Value)(mm) | Plug OD(mm) | Type | IR(A) | Working Voltage(V (DC)) | H(mm) | Technical Reference | VDC(V) | VBR(V) | IPeak(A) | PDiss(mW) | VClamp max.(V) | Data rate | Ports | PoE | Improved CMRR | Operating Temperature | VT(V (RMS)) | Mount | L(µH) | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WL-SMTW SMT Mono-color TOP LED Waterclear, 625 nm, Red | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWL-SMTW SMT Mono-color TOP LED Waterclear | Dominant Wavelength [typ.]625 nm | Emitting ColorRed | Peak Wavelength [typ.]630 nm | Luminous Intensity [typ.]300 mcd | Forward Voltage [typ.]2 V | Chip TechnologyAlInGaP | Viewing Angle Phi 0° [typ.]120 ° | – | – | – | – | – | – | – | – | Length3.5 mm | PackagingTape and Reel | – | – | – | – | – | – | Height1.9 mm | – | – | – | – | Power Dissipation72 mW | – | – | – | – | – | Operating Temperature -40 °C up to +85 °C | – | MountSMT | – | ||||
 | WCAP-ATG8 Aluminum Electrolytic Capacitors, –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWCAP-ATG8 Aluminum Electrolytic Capacitors | – | – | – | – | – | – | – | Capacitance1000 µF | Rated Voltage16 V (DC) | Endurance 2000 | Ripple Current869 mA | Leakage Current160 µA | Dissipation Factor16 % | Pitch5 mm | Diameter10 mm | Length16 mm | PackagingAmmopack | – | – | – | – | – | – | – | Technical ReferenceATBF160102M016DSPAAB000 | – | – | – | – | – | – | – | – | – | – | – | – | – | ||||
 | WR-DC Power Jacks, –, – | Simulation– | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWR-DC Power Jacks | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | PackagingBag | – | Center pin Ø2.5 mm | Recommended Plug outer Ø5.5 mm | TypeRight Angled | Rated Current5 A | Working Voltage30 V (DC) | – | – | – | – | – | – | – | – | – | – | – | Operating Temperature -40 °C up to +85 °C | – | MountTHT | – | |||
| WE-LAN 10G Transformer 10Gbit Base-T, –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-LAN 10G Transformer 10Gbit Base-T | – | – | – | – | – | – | – | – | – | – | – | – | – | Pitch1270 mm | – | Length18.29 mm | – | Pins24 | – | – | TypePoE+ | – | – | Height9.05 mm | – | – | – | – | – | – | Data rate10G Base-T | Ports1 | PoEPoE+ (up to 1 A) | Improved Common Mode RejectionNo | Operating Temperature 0 °C up to +70 °C | Insulation Test Voltage1500 V (RMS) | MountSMT | Inductance180 µH | |||||
 | WE-TVSP Power TVS Diode, –, – | Simulation– | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-TVSP Power TVS Diode | – | – | – | – | – | – | – | – | – | – | – | Leakage Current1 µA | – | – | – | Length4.24 mm | – | – | – | – | – | – | – | Height2.25 mm | Technical ReferenceSMAJ58A | DC Operating Voltage58 V | (Reverse) Breakdown Voltage67.8 V | (Reverse) Peak Pulse Current4.3 A | Power Dissipation400000 mW | Clamping Voltage [max.]93.6 V | – | – | – | – | Operating Temperature -65 °C up to +150 °C | – | MountSMT | – | |||
 | WR-PHD Pin Header - Single, –, – | Simulation– | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWR-PHD Pin Header - Single | – | – | – | – | – | – | – | – | – | – | – | – | – | Pitch2.54 mm | – | Length5.08 mm | PackagingBag | Pins2 | – | – | TypeStraight | Rated Current3 A | Working Voltage250 V (DC) | – | – | – | – | – | – | – | – | – | – | – | Operating Temperature -40 °C up to +105 °C | – | MountTHT | – | |||
 | WR-PHD Pin Header - Single, –, – | Simulation– | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWR-PHD Pin Header - Single | – | – | – | – | – | – | – | – | – | – | – | – | – | Pitch2.54 mm | – | Length7.62 mm | PackagingBag | Pins3 | – | – | TypeStraight | Rated Current3 A | Working Voltage250 V (DC) | – | – | – | – | – | – | – | – | – | – | – | Operating Temperature -40 °C up to +105 °C | – | MountTHT | – |