IC manufacturers Onsemi

IC manufacturers (103)

Onsemi NCV57000 | Demoboard SEC-PTC400

PTC IGBT Driver Reference Design

Overview

TopologyOther Topology
Input voltage200-400 V
Output 1380 V / 40 A
IC revision1.0.1

Description

This document is the entry point to the reference documentation of PTC heater discrete IGBT driver board evaluation platform, version 1.0.1. The evaluation platform is for thermal performance evaluation that provides developers with the tools and test data needed to build applications that drive PTC based on high current isolated driver and IGBT from On Semiconductor. This documentation focuses on the output voltage and current adjustment through high side and low side IGBT, and would help user to setup different variables, such as voltage, to get the wanted current and get the wanted test condition. Finally, it will help customer better understand isolated driver and IGBT performance by tested data and curve.

Features

  • 4V to 16V Operating Input Range
  • Wide Output Voltage:
  • I2C Programmable: 0.55V to 5.4V
  • External Resistor Divider: 0.6V to 7V or VIN * DMAX if VIN < 7V
  • Channel 1 and 2: 3A Continuous Current
  • Channel 3 and 4: 2A Continuous Current
  • Interleaved Operation
  • Configurable, Multi-Functional GPIO Pin
  • I2C and Configurable Parameters:
  • Paralleling Channel 1 and 2
  • Paralleling Channel 3 and 4
  • Switching Frequency
  • Output Voltage
  • Over-Current and Over-Voltage Protection Threshold
  • Power-On and Power-Off Sequencing
  • Forced PWM or Auto-PWM/PFM
  • Preset to MPM54304GMN-0000 Configuration

Products

Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
C
VR 2(V (DC))
dV/dt(V/µs)
DF @ 1 kHz(%)
RISO
Pitch(mm)
Packaging
IRP,40K(A)
ISAT,10%(A)
ISAT,30%(A)
fres(MHz)
Endurance(h)
IRIPPLE(mA)
ILeak(µA)
DF(%)
Ø D(mm)
Z(mΩ)
IR(A)
L(µH)
RDC max.(mΩ)
VR(V (DC))
VT(V (AC))
Material
L(mm)
W(mm)
H(mm)
Mount
Samples
WCAP-FTBE Film Capacitors, 68 nF, 504 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance68 nF
Rated Voltage 2504 V (DC)
Rate of Voltage Rise52 V/µs
Dissipation Factor1 %
Insulation Resistance9 GΩ
Pitch10 mm
PackagingCarton 
Rated Voltage630 V (DC)
Length13 mm
Width5.5 mm
Height11 mm
WCAP-ASLL Aluminum Electrolytic Capacitors, 10 µF, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance10 µF
Insulation Resistance10 MΩ
Packaging15" Tape & Reel 
Endurance 2000
Ripple Current150 mA
Leakage Current3.5 µA
Dissipation Factor14 %
Diameter5 mm
Impedance800 mΩ
Rated Voltage35 V (DC)
Length5.5 mm
Width5.3 mm
MountV-Chip SMT 
WCAP-ASLU Aluminum Electrolytic Capacitors, 10 µF, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance10 µF
Insulation Resistance3.33333 MΩ
Packaging15" Tape & Reel 
Endurance 1000
Ripple Current23 mA
Leakage Current0.4 µA
Dissipation Factor22 %
Diameter4 mm
Rated Voltage10 V (DC)
Length5.5 mm
Width4.3 mm
MountV-Chip SMT 
WCAP-AT1H Aluminum Electrolytic Capacitors, 22 µF, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance22 µF
Pitch5 mm
PackagingAmmopack 
Endurance 10000
Ripple Current632 mA
Leakage Current496 µA
Dissipation Factor20 %
Diameter13 mm
Rated Voltage450 V (DC)
Length25 mm
WCAP-ASLU Aluminum Electrolytic Capacitors, 47 µF, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance47 µF
Insulation Resistance2.12766 MΩ
Packaging15" Tape & Reel 
Endurance 1000
Ripple Current75 mA
Leakage Current3.3 µA
Dissipation Factor14 %
Diameter6.3 mm
Rated Voltage35 V (DC)
Length7.7 mm
Width6.6 mm
MountV-Chip SMT 
WE-CMB NiZn Common Mode Power Line Choke, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Rated Current10 A
Inductance16 µH
DC Resistance3 mΩ
Rated Voltage250 V (DC)
Insulation Test Voltage1500 V (AC)
MaterialNiZn 
Length18.5 mm
Width14.5 mm
Height22 mm
MountTHT 
WE-LHMI SMT Power Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Performance Rated Current9.1 A
Saturation Current @ 10%11.2 A
Saturation Current @ 30%27.6 A
Self Resonant Frequency45 MHz
Inductance1.5 µH
DC Resistance15 mΩ
Length7.3 mm
Width6.6 mm
Height2.8 mm
MountSMT 
WE-LHMI SMT Power Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Performance Rated Current12.8 A
Saturation Current @ 10%13.3 A
Saturation Current @ 30%30.9 A
Self Resonant Frequency17 MHz
Inductance3.3 µH
DC Resistance11 mΩ
Length13.5 mm
Width12.6 mm
Height3.3 mm
MountSMT