IC manufacturers Onsemi

IC manufacturers (103)

Onsemi NCP5181 | Demoboard NCP5181BAL36WEVB

NCP5181 36 W Ballast Evaluation Board User's Manual

Overview

TopologyHalf-Bridge Converter symmetrical isolated
Input voltage184-265 V
IC revision1

Description

This document describes how the NCP5181 driver can beimplemented in a ballast application. The scope of thisevaluation board user’s manual is to highlight the NCP5181driver and not to explain or detail how to build an electronicballast.The NCP5181 is a high voltage power MOSFET driverproviding two outputs for direct drive of two N-channelpower MOSFETs arranged in a half-bridge (or any otherhigh-side + low-side topology) configuration.It uses the bootstrap technique to ensure a proper drive ofthe high-side power switch. The driver works with twoindependent inputs to accommodate with any topology(including half-bridge, asymmetrical half-bridge, activeclamp and full-bridge).

Typical applications

  • Full−bridge Converters
  • Any Complementary Drive Converters (asymmetrical half−bridge,active clamp)
  • High Power Energy Management
  • Half−bridge Power Converters
  • Bridge Inverters for UPS Systems

Products

Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
C
VR(V (AC))
Safety Class
dV/dt(V/µs)
DF @ 1 kHz(%)
RISO
Pitch(mm)
L(mm)
W(mm)
H(mm)
Packaging
IR(A)
RDC max.(Ω)
Q(%)
Endurance(h)
IRIPPLE(mA)
ILeak(µA)
DF(%)
Ø D(mm)
IRIPPLE 2(mA)
RESR(mΩ)
L1(µH)
L2(µH)
IR(A)
IR 2(A)
ISAT(A)
RDC1 typ(Ω)
RDC2 typ(Ω)
RDC1 max(Ω)
RDC2 max(Ω)
fres(MHz)
Type
VIN
VOut1(V)
IOut1(A)
VOut2(V)
IOut2(A)
VOut3(V)
IOut3(A)
VOut4(V)
IOut4(A)
L(µH)
n
ISAT(A)
LS(µH)
VT(V (AC))
Size
IC Reference
Samples
WCAP-FTXX Film Capacitors, Across the mains, 1 µF
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance1 µF
Rated Voltage310 V (AC)
Safety ClassX2 
Rate of Voltage Rise170 V/µs
Dissipation Factor0.1 %
Insulation Resistance10 GΩ
Pitch22.5 mm
Length26 mm
Width11 mm
Height20 mm
PackagingCarton 
SizePitch 22.5 mm 
WE-LQ SMT Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Product seriesWE-LQ SMT Inductor
Length4.5 mm
Width3.2 mm
Height2.6 mm
Rated Current1.24 A
DC Resistance0.15 Ω
Q-Factor36 %
Self Resonant Frequency45 MHz
Inductance4.7 µH
Saturation Current2 A
Size1812 
WE-DD SMT Shielded Coupled Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Length12.5 mm
Width12.5 mm
Height6.5 mm
Rated Current4.91 A
DC Resistance0.021 Ω
Inductance 13.3 µH
Inductance 23.3 µH
Rated Current4.91 A
Rated Current 24.91 A
Saturation Current8.9 A
DC Resistance 10.017 Ω
DC Resistance 20.017 Ω
DC Resistance 10.021 Ω
DC Resistance 20.021 Ω
Self Resonant Frequency45 MHz
TypeStraight 
Inductance3.3 µH
Turns Ratio1:1 
Saturation Current8.9 A
Size1260 
WE-FB Flyback Transformer suitable for LT3573/ LT3574/ LT3575/ LT3748, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Length13.97 mm
Width17.17 mm
Height12.7 mm
Input Voltage 8 - 24 V (DC)
Output Voltage 115 V
Output Current 10.15 A
Output Voltage 215 V
Output Current 20.15 A
Output Voltage 315 V
Output Current 30.15 A
Output Voltage 415 V
Output Current 40.15 A
Inductance3.8 µH
Turns Ratio1:1:4:4:4:4 
Saturation Current12 A
Leakage Inductance0.4 µH
Insulation Test Voltage1500 V (AC)
SizeEP13 
IC ReferenceLT3575 & LT3748 
WCAP-ATG5 Aluminum Electrolytic Capacitors, –, 180 µF
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance180 µF
Rated Voltage400 V (AC)
Pitch7.5 mm
Length45 mm
PackagingTray 
Endurance 2000
Ripple Current700 mA
Leakage Current2160 µA
Dissipation Factor15 %
Diameter18 mm
WCAP-PTHT Aluminum Polymer Capacitors, –, 470 µF
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance470 µF
Rated Voltage16 V (AC)
Pitch5 mm
Length12.5 mm
PackagingAmmopack 
Endurance 2000
Ripple Current6100 mA
Leakage Current752 µA
Dissipation Factor10 %
Diameter10 mm
Ripple Current1929 mA
ESR10 mΩ