IC manufacturers Onsemi

IC manufacturers (103)

Onsemi NCP5181 | Demoboard 1kW motor control inverter

High Voltage High and Low Side Driver

Overview

TopologyOther Topology
IC revision8

Description

The NCP5181 is a High Voltage Power MOSFET Driver providingtwo outputs for direct drive of 2 N−channel power MOSFETs arrangedin a half−bridge (or any other high−side + low−side) configuration.It uses the bootstrap technique to insure a proper drive of theHigh−side power switch. The driver works with 2 independent inputsto accommodate any topology (including half−bridge, asymmetricalhalf−bridge, active clamp and full−bridge…).

Features

  • High Voltage Range: up to 600 V
  • dV/dt Immunity ±50 V/nsec
  • Gate Drive Supply Range from 10 V to 20 V
  • High and Low DRV Outputs
  • Output Source / Sink Current Capability 1.4 A / 2.2 A
  • 3.3 V and 5 V Input Logic Compatible
  • Up to VCC Swing on Input Pins
  • Matched Propagation Delays between Both Channels
  • Outputs in Phase with the Inputs
  • Independent Logic Inputs to Accommodate All Topologies
  • Under VCC LockOut (UVLO) for Both Channels
  • Pin to Pin Compatible with IR2181(S)
  • These are Pb−Free Devices

Typical applications

  • Bridge Inverters for UPS Systems
  • High Power Energy Management
  • Half−bridge Power Converters
  • Any Complementary Drive Converters (asymmetrical half−bridge, active clamp)
  • Full−bridge Converters

Products

Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
IR(A)
L(µH)
RDC max.(Ω)
VR(V (AC))
VT(V (AC))
Material
L(mm)
W(mm)
H(mm)
Mount
L1(µH)
L2(µH)
IR(A)
IR 2(A)
ISAT(A)
RDC1 typ(Ω)
RDC2 typ(Ω)
RDC1 max(Ω)
RDC2 max(Ω)
fres(MHz)
Type
VIN
VOut1(V)
IOut1(A)
VOut2(V)
IOut2(A)
VOut3(V)
IOut3(A)
VOut4(V)
IOut4(A)
n
ISAT(A)
LS(µH)
Size
IC Reference
Samples
WE-DD SMT Shielded Coupled Inductor, 4.91 A, 3.3 µH
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Rated Current4.91 A
Inductance3.3 µH
DC Resistance0.021 Ω
Length12.5 mm
Width12.5 mm
Height6.5 mm
Inductance 13.3 µH
Inductance 23.3 µH
Rated Current4.91 A
Rated Current 24.91 A
Saturation Current8.9 A
DC Resistance 10.017 Ω
DC Resistance 20.017 Ω
DC Resistance 10.021 Ω
DC Resistance 20.021 Ω
Self Resonant Frequency45 MHz
TypeStraight 
Turns Ratio1:1 
Saturation Current8.9 A
Size1260 
WE-CMBNC Common Mode Power Line Choke Nanocrystalline, 10 A, 2000 µH
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Rated Current10 A
Inductance2000 µH
DC Resistance0.0063 Ω
Rated Voltage300 V (AC)
Insulation Test Voltage2100 V (AC)
MaterialNanocrystalline 
Length24 mm
Width17 mm
Height25 mm
MountTHT 
Size
WE-FB Flyback Transformer suitable for LT3573/ LT3574/ LT3575/ LT3748, –, 3.8 µH
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance3.8 µH
Insulation Test Voltage1500 V (AC)
Length13.97 mm
Width17.17 mm
Height12.7 mm
Input Voltage 8 - 24 V (DC)
Output Voltage 115 V
Output Current 10.15 A
Output Voltage 215 V
Output Current 20.15 A
Output Voltage 315 V
Output Current 30.15 A
Output Voltage 415 V
Output Current 40.15 A
Turns Ratio1:1:4:4:4:4 
Saturation Current12 A
Leakage Inductance0.4 µH
SizeEP13 
IC ReferenceLT3575 & LT3748