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Details
| Topologie | Sonstige Topologie |
| IC-Revision | 8 |
Beschreibung
The NCP5181 is a High Voltage Power MOSFET Driver providingtwo outputs for direct drive of 2 N−channel power MOSFETs arrangedin a half−bridge (or any other high−side + low−side) configuration.It uses the bootstrap technique to insure a proper drive of theHigh−side power switch. The driver works with 2 independent inputsto accommodate any topology (including half−bridge, asymmetricalhalf−bridge, active clamp and full−bridge…).
Eigenschaften
- High Voltage Range: up to 600 V
- dV/dt Immunity ±50 V/nsec
- Gate Drive Supply Range from 10 V to 20 V
- High and Low DRV Outputs
- Output Source / Sink Current Capability 1.4 A / 2.2 A
- 3.3 V and 5 V Input Logic Compatible
- Up to VCC Swing on Input Pins
- Matched Propagation Delays between Both Channels
- Outputs in Phase with the Inputs
- Independent Logic Inputs to Accommodate All Topologies
- Under VCC LockOut (UVLO) for Both Channels
- Pin to Pin Compatible with IR2181(S)
- These are Pb−Free Devices
Typische Anwendungen
- Bridge Inverters for UPS Systems
- High Power Energy Management
- Half−bridge Power Converters
- Any Complementary Drive Converters (asymmetrical half−bridge, active clamp)
- Full−bridge Converters
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | IR(A) | L(µH) | RDC max.(Ω) | VR(V (AC)) | VT(V (AC)) | Material | L(mm) | B(mm) | H(mm) | Montageart | L1(µH) | L2(µH) | IR 1(A) | IR 2(A) | ISAT 1(A) | RDC1 typ(Ω) | RDC2 typ(Ω) | RDC1 max(Ω) | RDC2 max(Ω) | fres(MHz) | Typ | Vin | VOut1(V) | IOut1(A) | VOut2(V) | IOut2(A) | VOut3(V) | IOut3(A) | VOut4(V) | IOut4(A) | n | ISAT(A) | LS(µH) | Bauform | IC-Referenz | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-DD SMT-Doppeldrossel, 4.91 A, 3.3 µH | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-DD SMT-Doppeldrossel | Nennstrom4.91 A | Induktivität3.3 µH | Gleichstromwiderstand0.021 Ω | – | – | – | Länge12.5 mm | Breite12.5 mm | Höhe6.5 mm | – | Induktivität 13.3 µH | Induktivität 23.3 µH | Nennstrom 14.91 A | Nennstrom 24.91 A | Sättigungsstrom [1]8.9 A | Gleichstromwiderstand 10.017 Ω | Gleichstromwiderstand 20.017 Ω | Gleichstromwiderstand 10.021 Ω | Gleichstromwiderstand 20.021 Ω | Eigenresonanzfrequenz45 MHz | TypGerade | – | – | – | – | – | – | – | – | – | Übersetzungsverhältnis1:1 | Sättigungsstrom8.9 A | – | Bauform1260 | – | ||||
 | WE-CMBNC Stromkompensierte Netzdrossel Nanokristallin, 10 A, 2000 µH | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | Nennstrom10 A | Induktivität2000 µH | Gleichstromwiderstand0.0063 Ω | Nennspannung300 V (AC) | Prüfspannung2100 V (AC) | MaterialNanokristallin | Länge24 mm | Breite17 mm | Höhe25 mm | MontageartTHT | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | BauformM | – | |||||
 | WE-FB Sperrwandlerübertrager geeignet für LT3573/ LT3574/ LT3575/ LT3748, –, 3.8 µH | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | – | Induktivität3.8 µH | – | – | Prüfspannung1500 V (AC) | – | Länge13.97 mm | Breite17.17 mm | Höhe12.7 mm | – | – | – | – | – | – | – | – | – | – | – | – | Input Voltage 8 - 24 V (DC) | Ausgangsspannung 115 V | Ausgangsstrom 10.15 A | Ausgangsspannung 215 V | Ausgangsstrom 20.15 A | Ausgangsspannung 315 V | Ausgangsstrom 30.15 A | Ausgangsspannung 415 V | Ausgangsstrom 40.15 A | Übersetzungsverhältnis1:1:4:4:4:4 | Sättigungsstrom12 A | Streuinduktivität0.4 µH | BauformEP13 | IC-ReferenzLT3575 & LT3748 |