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Analog Devices LTC7890 | Demoboard EVAL-LTC7890-BZ
High Frequency, Dual Output, Step-Down Supply with Si FETs
Overview
| Topology | Buck Converter |
| Input voltage | 16-72 V |
| Switching frequency | 100-3000 kHz |
| Output 1 | 5 V / 10 A |
| Output 2 | 12 V / 10 A |
Description
Evaluation circuit EVAL-LTC7890-BZ is a dual output synchronous step-down converter that drives N-channel silicon (Si) field effect transistors (FETs). The EVAL-LTC7890-BZ evaluation board features 100V logic-level Si FETs.EVAL-LTC7890-BZ features the LTC®7890: a low quiescent current, high frequency (programmable fixed frequency from 100kHz up to 3MHz), dual step-down DC/DC synchronous controller, with a dedicated driver feature for GaN FETs, which can also be used to drive logic-level silicon FETs. To evaluate the LTC7890 with GaN FETs, refer to the EVAL-LTC7890-AZ evaluation board, which does 12VOUT at 20A and 5VOUT at 20A.
Features
- GaN drive technology fully optimized for GaN FETs
- Wide VIN range: 4 V to 100 V
- Wide output voltage range: 0.8 V ≤ VOUT ≤ 60 V
- No catch, clamp, or bootstrap diodes needed
- Internal smart bootstrap switches prevent overcharging of high-side driver supplies
- Internally optimized, smart near zero dead times or resistor adjustable dead times
- Split output gate drivers for adjustable turn on and turn off driver strengths
- Accurate adjustable driver voltage and UVLO
- Low IQ: 5 μA (48 VIN to 5 VOUT, Ch 1 On)
- Programmable frequency (100 kHz to 3 MHz)
- Synchronizable frequency (100 kHz to 3 MHz)
- Spread spectrum frequency modulation
- 40-lead (6 mm × 6 mm), side wettable, QFN package
Typical applications
- Military avionics
- Telecommunications power systems
- Industrial power systems
- medical systems
More information
Products
Order Code | Datasheet | Simulation | Downloads | Status | Product series | L(µH) | IRP,40K(A) | ISAT,30%(A) | RDC typ.(mΩ) | RDC max.(mΩ) | fres(MHz) | Pins | Mount | L(mm) | H(mm) | IR(A) | Working Voltage(V (AC)) | Operating Temperature | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-XHMI SMT Power Inductor, 2.2 µH, 32.05 A | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-XHMI SMT Power Inductor | Inductance2.2 µH | Performance Rated Current32.05 A | Saturation Current @ 30%32.1 A | DC Resistance2.2 mΩ | DC Resistance2.42 mΩ | Self Resonant Frequency28 MHz | Pins2 | MountSMT | Length11.6 mm | Height8.8 mm | Rated Current16 A | – | Operating Temperature -40 °C up to +125 °C | ||||
| WE-XHMI SMT Power Inductor, 4.7 µH, 20 A | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-XHMI SMT Power Inductor | Inductance4.7 µH | Performance Rated Current20 A | Saturation Current @ 30%28.05 A | DC Resistance5 mΩ | DC Resistance5.5 mΩ | Self Resonant Frequency21 MHz | Pins2 | MountSMT | Length11.6 mm | Height8.8 mm | Rated Current13.5 A | – | Operating Temperature -40 °C up to +125 °C | ||||
 | WR-PHD Jumper, –, – | Simulation– | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWR-PHD Jumper | – | – | – | – | – | – | Pins2 | – | – | – | Rated Current3 A | Working Voltage200 V (AC) | Operating Temperature -25 °C up to +105 °C |