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Analog Devices LT8418 | Demoboard EVAL-LT8418-AZ
100V Half-Bridge GaN Driver with Smart Integrated Bootstrap Switch
Overview
| Topology | Half-Bridge Converter symmetrical isolated |
| Input voltage | 80 V |
| Switching frequency | 100-10000 kHz |
| Output 1 | 80 V / 10 A |
Description
The EVAL-LT8418-AZ evaluation circuit features the LT8418 driving two 100V enhanced Gallium Nitride (eGaN) FETs in a half-bridge configuration. The circuit is optimized as a buck converter, but it can be used as a boost converter or other converter topologies consisting of a half-bridge. The evaluation circuit can deliver up to 10A with good thermal management.
Features
- Half-Bridge Gate Driver for GaN FETs
- 0.6Ω Pull-Up Resistance at Top Gate Driver
- 0.2Ω Pull-Down Resistance at Bottom Gate Driver
- 4A Peak Source, 8A Peak Sink Current Capability
- Smart Integrated Bootstrap Switch
- Split-Gate-Driver to Adjust Turn-On/Turn-Off Strength
- Default Low-State for All Driver Inputs and Outputs
- Maximum 15V Voltage Rating at INT and INB Inputs
- Independent INT, INB Inputs with TTL Logic Compatible
- Fast Propagation Delay: 10ns (Typical)
- Propagation Delay Matching: 1.5ns (Typical)
- Balanced Driver Supply Voltage: VBST ≈ VCC = 3.85V – 5.5V
- Undervoltage and Overvoltage Lockout Protections
- Small 12-Ball WLCSP Package
Typical applications
- Consumer
- Data Center Power Supplies
- High Frequency DC-DC Switching Power Converters, Motor Drivers, Class-D Audio Amplifiers, Half-Bridge, Full-Bridge, Push-Pull Converters
- Automotive
More information
Products
Order Code | Datasheet | Simulation | Downloads | Status | Product series | C | Tol. C | VR(V (DC)) | Size | DF(%) | RISO | Ceramic Type | W(mm) | Fl(mm) | Packaging | Ti | Ø OD(mm) | Ø ID(mm) | Qty. | κ(W/(m*K)) | Pins | Type | Mount | L(mm) | H(mm) | IR(A) | Working Voltage(V (AC)) | Operating Temperature | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| WCAP-CSGP MLCCs 16 V(DC), 100 nF, ±10% | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWCAP-CSGP MLCCs 16 V(DC) | Capacitance100 nF | Capacitance±10% | Rated Voltage16 V (DC) | Size0603 | Dissipation Factor3.5 % | Insulation Resistance5 GΩ | Ceramic TypeX7R Class II | Width0.8 mm | Pad Dimension0.4 mm | Packaging7" Tape & Reel | – | – | – | Packaging Unit4000 | – | – | – | – | Length1.6 mm | Height0.8 mm | – | – | Operating Temperature -55 °C up to +125 °C | |||||
 | WA-SMSI SMT Steel Spacer with internal Thread M2.5, –, – | Simulation– | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWA-SMSI SMT Steel Spacer with internal Thread M2.5 | – | – | – | – | – | – | – | – | – | PackagingTape and Reel | Inner ThreadM2.5 | Outer Diameter5.1 mm | Inner Diameter3.5 mm | Packaging Unit1500 | – | – | – | – | Length1 mm | – | – | – | Operating Temperature -55 °C up to +150 °C | |||
 | WR-PHD Jumper, –, – | Simulation– | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWR-PHD Jumper | – | – | – | – | – | Insulation Resistance1000 MΩ | – | – | – | PackagingBag | – | – | – | Packaging Unit1000 | – | Pins2 | – | – | – | – | Rated Current3 A | Working Voltage200 V (AC) | Operating Temperature -25 °C up to +105 °C | |||
 | WR-PHD Pin Header, –, – | Simulation– | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWR-PHD Pin Header | – | – | – | – | – | Insulation Resistance1000 MΩ | – | – | – | PackagingBag | – | – | – | Packaging Unit1000 | – | Pins3 | TypeStraight | MountTHT | Length6 mm | – | Rated Current2 A | Working Voltage200 V (AC) | Operating Temperature -40 °C up to +105 °C | |||
 | WE-TGS Graphite Sheet, –, – | Simulation– | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-TGS Graphite Sheet | – | – | – | – | – | – | – | Width100 mm | – | – | – | – | – | – | Thermal Conductivity1800 W/(m*K) | – | – | – | Length100 mm | Height0.037 mm | – | – | Operating Temperature -50 °C up to +120 °C |